Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes

• US 9,653,642 B1
• Filed: 07/13/2016
• Issued: 05/16/2017
• Est. Priority Date: 12/23/2014
• Status: Active Grant

• Current Assignee: Kyocera SLD Laser Incorporated (Kyocera Corporation)
• Original Assignee: Soraa Laser Diode, Inc. (Kyocera Corporation)
• Inventors: Raring, James W., McLaurin, Melvin, Sztein, Alexander, Hsu, Po Shan
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): Mustapha, Abdulfattah
• Application Number:
  US15/209,309
• Time in Patent Office: 307 Days
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/8252 the substrate being a semiconductor, using III-V technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 2221/68354 used to support diced chips prior to mounting
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2221/68377 with parts of the auxiliary support remaining in the finished device
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/83005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/83191 wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/8389 using an inorganic non metallic glass type adhesive, e.g. solder glass
• CPC Class Codes: H01L 2224/83895 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 2224/83896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 2224/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2224/95001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/95 : at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 27/0605 : integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 27/0629 : in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0676 : comprising combinations of diodes, or capacitors or resistors
• CPC Class Codes: H01L 27/085 : including field-effect components only
• CPC Class Codes: H01L 27/088 : the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/1255 : integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 : Multistep manufacturing methods
• CPC Class Codes: H01L 27/15 : including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/1066 : Gate region of field-effect devices with PN junction gate
• CPC Class Codes: H01L 29/2003 : Nitride compounds
• CPC Class Codes: H01L 29/205 : in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/4236 : within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/432 : Heterojunction gate for field effect devices
• CPC Class Codes: H01L 29/66136 : PN junction diodes
• CPC Class Codes: H01L 29/66143 : Schottky diodes
• CPC Class Codes: H01L 29/66318 : Heterojunction transistors
• CPC Class Codes: H01L 29/66462 : with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
• CPC Class Codes: H01L 29/66916 : with a PN heterojunction gate
• CPC Class Codes: H01L 29/7786 : with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
• CPC Class Codes: H01L 29/8613 : Mesa PN junction diodes
• CPC Class Codes: H01L 29/872 : Schottky diodes
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/1203 : Rectifying Diode
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 33/0025 : comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0066 : with a substrate not being a III-V compound
• CPC Class Codes: H01L 33/007 : comprising nitride compounds
• CPC Class Codes: H01L 33/0075 : comprising nitride compounds
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 : within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01S 5/0203 : Etching
• CPC Class Codes: H01S 5/0217 : Removal of the substrate
• CPC Class Codes: H01S 5/227 : Buried mesa structure ; Striped active layer
• CPC Class Codes: H01S 5/34333 : with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

Claims

1. A method for manufacturing a multi-wavelength light-emitting-diode based display panel device, the method comprising:

providing at least one carrier wafer;

providing a first substrate having a first surface region;

forming a first gallium and nitrogen containing epitaxial material overlying the first surface region, the first epitaxial material comprising a first release material overlying the first substrate and at least an n-type gallium and nitrogen containing region, a light emitting gallium and nitrogen containing region configured to emit electromagnetic radiation at a first wavelength, and a p-type gallium and nitrogen containing region overlying the first release material;

patterning the first epitaxial material and forming mesas to form a first plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a first pitch between the adjacent die in the array;

forming a first interface region overlying the first epitaxial material, the first interface region comprising a metal, a semiconductor, dielectric, oxide, glass, or a polymer;

subjecting the first release material to a photo electrochemical (PEC) etch to completely or partially remove the first release material;

bonding the first interface region to the at least one carrier wafer to form a bonded structure, while maintaining the first release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of first dice provided on the first substrate member to transfer a first plurality of dice to the at least one carrier wafer;

wherein each pair of the transferred dice is configured with a second pitch between each pair of dice on a carrier wafer, the second pitch being equal or greater than the first pitch;

providing a second substrate having a second surface region;

forming a second gallium and nitrogen containing epitaxial material overlying the second surface region, the second epitaxial material comprising a second release material overlying the second substrate and at least an n-type gallium and nitrogen containing region, a light emitting gallium and nitrogen containing region configured to emit electromagnetic radiation at a second wavelength, and a p-type gallium and nitrogen containing region overlying the second release material;

patterning the second epitaxial material and forming mesas to form a second plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a third pitch between the adjacent die in the array;

forming a second interface region overlying the second epitaxial material, the second interface region comprising a metal, a semiconductor, dielectric, oxide, glass, or a polymer;

subjecting the second release material to an etching process to completely or partially remove the second release material;

bonding the second interface region to the at least one carrier wafer to form a bonded structure, while maintaining the second release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of second dice provided on the second substrate member to transfer a second plurality of dice to the at least one carrier wafer wherein each pair of the transferred dice is configured with a fourth pitch between each pair of dice on a carrier wafer, the fourth pitch being equal or greater than the third pitch; and

processing the at least one carrier wafer with at least the first plurality of dice and the second plurality of dice to form a multi-color light emitting diode based display panel device operable at least the first wavelength and the second wavelength.

2. The method of claim 1, further comprising:

providing a third substrate having a third surface region;

forming a third epitaxial material overlying the third surface region, the third epitaxial material comprising a third release material overlying the third substrate and at least an n-type gallium and arsenic containing region, a gallium and arsenic containing light emitting region configured to emit electromagnetic radiation at a third wavelength, and a p-type gallium and arsenic containing region overlying the third release material;

patterning the third epitaxial material and forming mesas to form a third plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a fifth pitch between the adjacent die in the array;

forming a third interface region overlying the third epitaxial material, the third interface region comprising a metal, a semiconductor, dielectric, oxide, glass, or a polymer;

subjecting the third release material to an etching process to completely or partially remove the third release material;

bonding the third interface region to the at least one carrier wafer to form a bonded structure, while maintaining the third release material completely or partially etched away from the bonded structure; and

releasing at least a fraction of the plurality of third dice provided on the third substrate member to transfer a third plurality of dice to the at least one carrier wafer wherein each pair of the transferred dice is configured with a sixth pitch between each pair of dice on a carrier wafer, the sixth pitch being equal or greater than the fifth pitch;

processing the at least one carrier wafer with at least the first plurality of dice, the second plurality of dice, and third plurality of dice to form a multi-color light emitting diode based display panel device operable at least the first wavelength, second wavelength, and third wavelength.

3. The method of claim 2,

wherein the multi-color light emitting diode based display panel device is an RGB light-emitting-diode display panel device;

wherein the first wavelength is in the blue wavelength range of 420 nm to 480 nm, the second wavelength is in the green wavelength range of 500 nm to 550 nm, and the third wavelength is in the red wavelength range of 620 nm to 700 nm range; and

wherein the red, green, and blue light emitting diodes are arranged in a two dimensional array with repeating red-green-blue light emitting diode domains forming pixels.

4. The method of claim 3, wherein the light emitting diodes are characterized by an emission surface area wherein the largest dimension is less than 1,000 um, or less than 500 um, or less than 100, or less than 50 um, or less than 25 um, or less than 10 um, or less than 5 um;

and wherein the light emitting diodes are characterized by a pitch of less than 3,000 um, 1,000 um, or less than 500 um, or less than 100, or less than 50 um, or less than 20 um, or less than 10 um.

5. The method of claim 1, wherein the at least one carrier wafer are selected from a sapphire wafer, a glass wafer, silicon carbide wafer, aluminum nitride wafer, silicon wafer, gallium arsenide wafer, diamond wafer, gallium nitride wafer, an indium phosphide wafer, or a flexible member.

6. The method of claim 2, wherein the first substrate member is comprised of a gallium and nitrogen containing material, a silicon material, a sapphire material, or a silicon carbide material;

and wherein second substrate member is comprised of a gallium and nitrogen containing material, a silicon material, a sapphire material, or a silicon carbide material; and

wherein third substrate member is comprised of a gallium and arsenic containing material, a silicon material, a sapphire material, or a silicon carbide material.

7. The method of claim 2, wherein the carrier wafer is configured with an interconnect network to provide electrical power to the light emitting diode devices;

and

wherein the interconnect network is electrically coupled to electrical drive circuit elements such as resistors, capacitors, and/or transistors.

8. The method of claim 7 wherein the electrical drive circuit is configured with a thin film transistor (TFT) network.

9. The method of claim 1, wherein the wherein the PEC etch of the first release region is performed prior to the bonding step;

and wherein the PEC etch selectively removes the first release region while leaving an anchor region intact to support the die before the selective bonding of the one or more die to the carrier wafer and the anchor region separates after the selective bonding of the one or more die;

wherein the anchor region is comprised of metal, semiconductor, dielectric, oxide, polymer, or a combination thereof.

10. The method of claim 1, wherein the bonding comprising thermal bonding, thermocompressive bonding, plasma activated bonding, anodic bonding, chemical bonding, or combinations thereof wherein the bond interface region comprising at least one of a metal-metal pair, dielectric-dielectric, oxide-oxide, semiconductor-semiconductor pair, a glass such as a spin-on-glass, soldering alloys, polymers, photoresists, wax, or a combination thereof.

11. The method of claim 1, wherein the first substrate is reclaimed and prepared for reuse after transferring each of the plurality of dice to at least one carrier wafer.

12. A method for manufacturing an RGB light-emitting-diode based display panel device, the method comprising:

providing at least one carrier wafer;

providing a first substrate having a first surface region;

forming a first gallium and nitrogen containing epitaxial material overlying the first surface region, the first epitaxial material comprising a first release material overlying the first substrate and at least an n-type gallium and nitrogen containing region, a light emitting gallium and nitrogen containing active region configured to emit electromagnetic radiation at a first blue wavelength, and a p-type gallium and nitrogen containing region overlying the first release material;

patterning the first epitaxial material and forming mesas to form a first plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a first pitch between the adjacent die in the array;

forming a first interface region overlying the first epitaxial material;

subjecting the first release material to a photo electrochemical (PEC) etch to completely or partially remove the first release material;

bonding the first interface region to the at least one carrier wafer to form a bonded structure, while maintaining the first release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of first dice provided on the first substrate member to transfer a first plurality of dice to the at least one carrier wafer;

wherein each pair of the transferred dice is configured with a second pitch between each pair of dice on a carrier wafer, the second pitch being equal or greater than the first pitch;

wherein the PEC etch of the first release region is performed prior to the bonding step; and

wherein the etch selectively completely or partially removes the first release region while leaving a first anchor region intact to support the plurality of first dice before the selective bonding of at least a fraction of the first dice to the carrier wafer;

the first anchor region separates after the selective bonding of the first dice;

the method further comprising;

providing a second substrate having a second surface region;

forming a second epitaxial material overlying the second surface region, the second epitaxial material comprising a second release material overlying the second substrate and at least an n-type gallium and nitrogen containing region, a light emitting gallium and nitrogen containing active region configured to emit electromagnetic radiation at a second green wavelength, and a p-type gallium and nitrogen containing region overlying the second release material;

patterning the second epitaxial material and forming mesas to form a second plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a third pitch between the adjacent die in the array;

forming a second interface region overlying the second epitaxial material,

subjecting the second release material to a photo electrochemical (PEC) etch to completely or partially remove the second release material;

bonding the second interface region to the at least one carrier wafer to form a bonded structure, while maintaining the second release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of second dice provided on the second substrate member to transfer a second plurality of dice to the at least one carrier wafer;

wherein each pair of the transferred dice is configured with a fourth pitch between each pair of dice on a carrier wafer, the fourth pitch being equal or greater than the third pitch;

wherein the PEC etch of the second release region is performed prior to the bonding step; and

wherein the etch completely or partially selectively removes the second release region while leaving a second anchor region intact to support the plurality of second dice before the selective bonding of at least the fraction of the second dice to the carrier wafer;

the second anchor region separates after the selective bonding of the second dice.

13. The method of claim 12, further comprising:

providing a third substrate having a third surface region;

forming a third gallium and arsenic containing epitaxial material overlying the third surface region, the third epitaxial material comprising a third release material overlying the third substrate and at least an n-type gallium and arsenic containing region, a light emitting gallium and arsenic containing active region configured to emit electromagnetic radiation at a third red wavelength, and a p-type gallium and arsenic containing region overlying the third release material;

patterning the third epitaxial material and forming mesas to form a third plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a fifth pitch between the adjacent die in the array;

forming a third interface region overlying the third epitaxial material;

subjecting the third release material to an etching process to completely or partially remove the third release material;

bonding the third interface region to the at least one carrier wafer to form a bonded structure, while maintaining the third release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of third dice provided on the third substrate member to transfer a third plurality of dice to the at least one carrier wafer wherein each pair of the transferred dice is configured with a sixth pitch between each pair of dice on a carrier wafer, the sixth pitch being equal or greater than the fifth pitch;

processing the at least one carrier wafer with at least the first plurality of dice, the second plurality of dice, and third plurality of dice to form a two dimensional matrix of red, green, and blue light emitting diode devices to form an RGB light emitting diode based display panel device;

wherein a repeating pattern of at least one red light emitting diode device, at least one green light emitting diode device, and at least one blue light emitting diode device within the matrix form pixels within the display panel.

14. The method of claim 12 wherein the first anchor region is comprised of metal, semiconductor, dielectric, oxide, polymer, or a combination thereof;

and wherein the second anchor region is comprised of metal, semiconductor, dielectric, oxide, polymer, or a combination thereof.

15. The method of claim 13 wherein the carrier wafer is configured with an interconnect network to provide electrical power to the light emitting diode devices.

16. The method of claim 13, wherein the first blue wavelength is in the 420 nm to 480 nm wavelength range, the second green wavelength is in the 500 nm to 550 nm wavelength range, and the third red wavelength is in 620 nm to 700 nm wavelength range.

17. The method of claim 13, wherein the LEDs are characterized by an emission surface wherein the largest dimension is less than 1,000 um, less than 500 um, less than 100, less than 50 um, less than 10 um, or less than 5 um;

and wherein the LEDs are characterized a pitch of less than 3,000 um, less than 1,000 um, less than 500 um, less than 100, less than 50 um, less than 20 um, or less than 10 um.

18. A method for manufacturing an RGB light-emitting-diode based display panel device, the method comprising:

providing at least one carrier wafer;

providing a first substrate having a first surface region;

forming a first gallium and nitrogen containing epitaxial material overlying the first surface region, the first epitaxial material comprising a first release material overlying the first substrate and at least an n-type gallium and nitrogen containing region, a light emitting gallium and nitrogen containing active region configured to emit electromagnetic radiation at a first blue wavelength, and a p-type gallium and nitrogen containing region overlying the first release material;

patterning the first epitaxial material and forming mesas to form a first plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a first pitch between the adjacent die in the array;

forming a first interface region overlying the first epitaxial material;

subjecting the first release material to a photo electrochemical (PEC) etch to completely or partially remove the first release material;

bonding the first interface region to the at least one carrier wafer to form a bonded structure, while maintaining the first release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of first dice provided on the first substrate member to transfer a first plurality of dice to the at least one carrier wafer, wherein each pair of the transferred dice is configured with a second pitch between each pair of dice on a carrier wafer, the second pitch being equal or greater than the first pitch;

providing a second substrate having a second surface region;

forming a second epitaxial material overlying the second surface region, the second epitaxial material comprising a second release material overlying the second substrate and at least an n-type gallium and nitrogen containing region, a light emitting gallium and nitrogen containing active region configured to emit electromagnetic radiation at a second green wavelength, and a p-type gallium and nitrogen containing region overlying the second release material;

patterning the second epitaxial material and forming mesas to form a second plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a third pitch between the adjacent die in the array;

forming a second interface region overlying the second epitaxial material;

subjecting the second release material to an etching process to completely or partially remove the second release material;

bonding the second interface region to the at least one carrier wafer to form a bonded structure, while maintaining the second release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of second dice provided on the second substrate member to transfer a second plurality of dice to the at least one carrier wafer;

wherein each pair of the transferred dice is configured with a fourth pitch between each pair of dice on a carrier wafer, the fourth pitch being equal or greater than the third pitch;

providing a third substrate having a third surface region;

forming a third epitaxial material overlying the third surface region, the third epitaxial material comprising a third release material overlying the third substrate and at least an n-type gallium and arsenic containing region, a light emitting gallium and arsenic containing active region configured to emit electromagnetic radiation at a third red wavelength, and a p-type gallium and arsenic containing region overlying the third release material;

patterning the third epitaxial material and forming mesas to form a third plurality of dice arranged in an array, each die corresponding to at least one light emitting diode device and being arranged by a fifth pitch between the adjacent die in the array;

forming a third interface region overlying the third epitaxial material;

subjecting the third release material to an etching process to completely or partially remove the third release material;

bonding the third interface region to the at least one carrier wafer to form a bonded structure, while maintaining the third release material completely or partially etched away from the bonded structure;

releasing at least a fraction of the plurality of third dice provided on the third substrate member to transfer a third plurality of dice to the at least one carrier wafer;

wherein each pair of the transferred dice is configured with a sixth pitch between each pair of dice on a carrier wafer, the sixth pitch being equal or greater than the fifth pitch;

processing the at least one carrier wafer with at least the first plurality of dice, the second plurality of dice, and third plurality of dice to form a light emitting diode based display panel device with a two dimensional array of red, green, and blue light emitting diode devices;

wherein a repeating pattern of at least one red light emitting diode device, at least one green light emitting diode device, and at least one blue light emitting diode device form pixels within the RGB display panel device.

19. The method of claim 18 whereupon the carrier wafer is configured with an interconnect network to provide electrical power to the light emitting diode devices;

and wherein the interconnect network is electrically coupled to electrical drive circuit elements such as resistor, capacitors, and/or transistors.

20. The method of claim 18, wherein the light emitting diode devices are characterized by an emission surface wherein the largest dimension is less than 1,000 um, less than 500 um, less than 100, less than 50 um, less than 10 um, or less than 5 um;

and wherein the light emitting diode devices are characterized a pitch of less than 3,000 um, less than 1,000 um, or less than 500 um, or less than 100, or less than 50 um, or less than 20 um, or less than 10 um.