Wafer level packaging of light emitting diodes (LEDs)
First Claim
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1. A Light Emitting Diode (LED), comprising:
- a semiconductor LED die that includes an LED epi region and a substrate, the LED epi region having first and second opposing faces, a plurality of LED epi region sidewalls therebetween that extend obliquely from the second face toward the first face of the LED epi region to define an obtuse angle with the second face, and an anode contact and a cathode contact on the first face, the substrate having inner and outer faces and a plurality of substrate sidewalls therebetween that extend obliquely from the outer face toward the inner face of the substrate to define an obtuse angle with the outer face, the inner face of the substrate being adjacent the second face of the LED epi region;
a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, and that is electrically connected to the anode and cathode contacts that are on the first face of the LED epi region of the LED die, wherein the LED epi region and the carrier die have sides that are within 100 μ
m of one another in length; and
a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face and the sidewalls of the substrate, on the plurality of LED epi region sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face and the sidewalls of the substrate, the plurality of LED epi region sidewalls and the plurality of carrier die sidewalls,the LED being free of a dome that extends on the semiconductor LED die and on the carrier die.
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Abstract
An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.
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Citations
67 Claims
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1. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes an LED epi region and a substrate, the LED epi region having first and second opposing faces, a plurality of LED epi region sidewalls therebetween that extend obliquely from the second face toward the first face of the LED epi region to define an obtuse angle with the second face, and an anode contact and a cathode contact on the first face, the substrate having inner and outer faces and a plurality of substrate sidewalls therebetween that extend obliquely from the outer face toward the inner face of the substrate to define an obtuse angle with the outer face, the inner face of the substrate being adjacent the second face of the LED epi region; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, and that is electrically connected to the anode and cathode contacts that are on the first face of the LED epi region of the LED die, wherein the LED epi region and the carrier die have sides that are within 100 μ
m of one another in length; anda phosphor layer having first and second opposing surfaces that both conformally extend on the outer face and the sidewalls of the substrate, on the plurality of LED epi region sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face and the sidewalls of the substrate, the plurality of LED epi region sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes an LED epi region, the LED epi region having first and second opposing faces, a plurality of LED epi region sidewalls therebetween that extend obliquely from the second face toward the first face of the LED epi region to define an obtuse angle with the second face, and an anode contact and a cathode contact on the first face, the substrate having inner and outer faces and a plurality of substrate sidewalls therebetween that extend obliquely from the outer face toward the inner face of the substrate to define an obtuse angle with the outer face, the inner face of the substrate being adjacent the second face of the LED epi region; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, and that is electrically connected to the anode and cathode contacts that are on the first face of the LED epi region of the LED die, wherein the LED epi region and the carrier die have sides that are within about 15% of one another in length; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face and the sidewalls of the substrate, on the plurality of LED epi region sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face and the sidewalls of the substrate, the plurality of LED epi region sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes inner and outer faces and a plurality of LED die sidewalls therebetween that extend obliquely from the outer face toward the inner face of the LED die to define an obtuse angle with the outer face; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, wherein the inner face of the carrier die is electrically connected to the inner face of the LED die, wherein the LED produces at least 45 lumens per watt per square millimeter of area of the carrier die; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face of the LED die, on the plurality of LED die sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face of the LED die, the plurality of LED die sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (20, 21, 22, 23)
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24. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes inner and outer faces and a plurality of LED die sidewalls therebetween that extend obliquely from the outer face toward the inner face of the LED die to define an obtuse angle with the outer face; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, wherein the inner face of the carrier die is electrically connected to the inner face of the LED die, wherein the LED produces at least 30 lumens of warm white light per square millimeter of area of the carrier die; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face of the LED die, on the plurality of LED die sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face of the LED die, the plurality of LED die sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (25, 26, 27, 28)
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29. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes inner and outer faces and a plurality of LED die sidewalls therebetween that extend obliquely from the outer face toward the inner face of the LED die to define an obtuse angle with the outer face; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, wherein the inner face of the carrier die is electrically connected to the inner face of the LED die, wherein the LED produces at least 45 lumens per watt per cubic millimeter of volume of the LED; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face of the LED die, on the plurality of LED die sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face of the LED die, the plurality of LED die sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (30, 31, 32)
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33. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes inner and outer faces and a plurality of LED die sidewalls therebetween that extend obliquely from the outer face toward the inner face of the LED die to define an obtuse angle with the outer face; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, wherein the inner face of the carrier die is electrically connected to the inner face of the LED die, wherein the LED produces at least 30 lumens of warm white light per watt per cubic millimeter of volume of the LED; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face of the LED die, on the plurality of LED die sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face of the LED die, the plurality of LED die sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (34, 35, 36)
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37. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes inner and outer faces and a plurality of LED die sidewalls therebetween that extend obliquely from the outer face toward the inner face of the LED die to define an obtuse angle with the outer face; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, wherein the inner face of the carrier die is electrically connected to the inner face of the LED die, wherein the carrier die has an area of less than about 2 square millimeters; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face of the LED die, on the plurality of LED die sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face of the LED die, the plurality of LED die sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (38, 39, 40, 41, 42)
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43. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes inner and outer faces and a plurality of LED die sidewalls therebetween that extend obliquely from the outer face toward the inner face of the LED die to define an obtuse angle with the outer face; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, wherein the inner face of the carrier die is electrically connected to the inner face of the LED die, wherein the LED has a height of less than about 1.5 millimeters; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face of the LED die, on the plurality of LED die sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face of the LED die, the plurality of LED die sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (44, 45)
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46. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes inner and outer faces and a plurality of LED die sidewalls therebetween that extend obliquely from the outer face toward the inner face of the LED die to define an obtuse angle with the outer face; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, wherein the inner face of the LED die is electrically connected to the inner face of the carrier die; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face of the LED die, on the plurality of LED die sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing, surfaces being directly on the outer face of the LED die, the plurality of LED die sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (47, 48, 49, 50, 51, 52, 53, 54)
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55. A Light Emitting Diode (LED), comprising:
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an LED epi region having first and second opposing faces, a plurality of LED epi region sidewalls therebetween that extend obliquely from the second face toward the first face of the LED epi region to define an obtuse angle with the second face, and an anode contact and a cathode contact on the first face; a carrier that includes inner and outer faces and a plurality of carrier sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face, and that is electrically connected to the anode and cathode contacts that are on the first face of the LED epi region; a primary optic distinct from the LED epi region; and a phosphor layer having first and second opposing surfaces that both conformally extend on an outer surface of the primary optic, on the plurality of LED epi region sidewalls and on the plurality of carrier sidewalls, one of the first and second opposing surfaces being directly on the outer surface of the primary optic, the plurality of LED epi region sidewalls and the plurality of carrier sidewalls, wherein the carrier, LED epi region, primary optic and phosphor layer have outer edges that are within 100 μ
m of one another, andwherein the LED is free of a dome that extends on the LED epi region and on the carrier. - View Dependent Claims (56, 57)
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58. A Light Emitting Diode (LED), comprising:
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a semiconductor LED die that includes an LED epi region and a substrate, the LED epi region having first and second opposing faces, a plurality of LED epi region sidewalls therebetween that extend obliquely from the second face toward the first face of the LED epi region to define an obtuse angle with the second face, and an anode contact and a cathode contact on the first lace, the substrate having inner and outer faces and a plurality of substrate sidewalls therebetween that extend obliquely from the outer face toward the inner face of the substrate to define an obtuse angle with the outer face, the inner face of the substrate being adjacent the second face of the LED epi region; a carrier die that includes inner and outer faces and a plurality of carrier die sidewalls therebetween that extend obliquely from the inner face toward the outer face of the carrier die to define an obtuse angle with the inner face and that is electrically connected to the anode and cathode contacts that are on the first face of the LED epi region of the LED die, wherein the LED epi region and the carrier die have areas that are within 70% of one another; and a phosphor layer having first and second opposing surfaces that both conformally extend on the outer face and the sidewalls of the substrate, on the plurality of LED epi region sidewalls and on the plurality of carrier die sidewalls, one of the first and second opposing surfaces being directly on the outer face and the sidewalls of the substrate, the plurality of LED epi region sidewalls and the plurality of carrier die sidewalls, the LED being free of a dome that extends on the semiconductor LED die and on the carrier die. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 67)
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Specification
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Current AssigneeCreeled Incorporated
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Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
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InventorsHussell, Christopher P., Bergmann, Michael John, Emerson, David Todd, Clark, Joseph G.
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Primary Examiner(s)Sarkar, Asok K
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Assistant Examiner(s)Hatzilambrou, Mark
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Application NumberUS13/608,397Publication NumberTime in Patent Office1,709 DaysField of Search257 79, 257 98, 257100, 438 22, 438 26, 438 29, 438 33US Class CurrentCPC Class CodesH01L 2224/13013 being rectangular or squareH01L 2224/13014 being circular or ellipticH01L 2224/13147 Copper [Cu] as principal co...H01L 2224/13639 Silver [Ag] as principal co...H01L 2224/1403 Bump connectors having diff...H01L 2224/14051 Bump connectors having diff...H01L 2224/1411 the bump connectors being b...H01L 2224/14131 being uniform, i.e. having ...H01L 2224/14155 Covering only the periphera...H01L 2224/14177 Combinations of arrays with...H01L 2224/81193 wherein the bump connectors...H01L 2224/81203 Thermocompression bonding, ...H01L 2224/81805 involving forming a eutecti...H01L 2224/81895 between electrically conduc...H01L 2224/94 at wafer-level, i.e. with c...H01L 24/14 of a plurality of bump conn...H01L 24/81 using a bump connectorH01L 24/94 at wafer-level, i.e. with c...H01L 25/0756 Stacked arrangements of dev...H01L 2924/00 Indexing scheme for arrange...View All
