Semiconductor light emitting apparatus

• US 9,653,657 B2
• Filed: 06/02/2014
• Issued: 05/16/2017
• Est. Priority Date: 06/10/2013
• Status: Active Grant

• Current Assignee: Asahi Kasei E-materials Corporation (Asahi Kasei Corporation)
• Original Assignee: Asahi Kasei E-materials Corporation (Asahi Kasei Corporation)
• Inventors: Yamaguchi, Fujito, Shirokura, Nao
• Primary Examiner(s): CHOI, CALVIN Y
• Application Number:
  US14/897,159
• Publication Number:
  US 20160149089A1
• Time in Patent Office: 1,079 Days
• Field of Search: None
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials

Abstract

A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal (102) has at least two or more periods each of 1 μm or more.

Claims

1. A semiconductor light emitting apparatus comprising:

a semiconductor light emitting device having a layered semiconductor layer configured by layering at least two semiconductor layers, and a light emitting layer to emit first light; and

a wavelength conversion member that covers at least a part of the semiconductor light emitting device, absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light,

wherein the semiconductor light emitting device is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in an out-of-plane direction on one of main surfaces forming the semiconductor light emitting device,

wherein the fine structure layer forms a two-dimensional photonic crystal controlled by a pitch between the dots that is an inconstant pitch that increases and decreases periodically, and

wherein the two-dimensional photonic crystal includes at least two periods that each have a long period unit, of the inconstant pitch that increases and decreases periodically, of 1.3 μ

m or more.

2. The semiconductor light emitting apparatus according to claim 1, wherein the two-dimensional photonic crystal includes at least two periods that each have a long period unit, of the inconstant pitch between the dots that increases and decreases periodically, of at least six times an optical wavelength of the first light and at least six times an optical wavelength of the second light.

4. The semiconductor light emitting apparatus according to claim 1, wherein the wavelength conversion member contains a first material transparent at least to the first light and the second light, and a second material that absorbs at least a part of the first light to emit the second light.

5. The semiconductor light emitting apparatus according to claim 4, wherein the fine structure layer is provided at least on an uppermost surface of the semiconductor light emitting device as a component, and

an intermediate material, which is substantially transparent at least to the first light and the second light and does not contain the second material, is filled in between the fine structure layer and the wavelength conversion member.

6. The semiconductor light emitting apparatus according to claim 5, wherein the second material has an average particle diameter smaller than the optical wavelength of the first light in the first material.

7. The semiconductor light emitting apparatus according to claim 4, wherein the wavelength conversion member is configured to emit the second light and third light with a wavelength different from that of each of the first light and the second light, and contains a first material transparent at least to the first light, the second light and the third light, and a third material that absorbs at least a part of the first light to emit the third light, and

wherein the two-dimensional photonic crystal includes a period having a long period unit, of the inconstant pitch between the dots that increases and decreases periodically, of at least six times an optical wavelength of the third light.

8. The semiconductor light emitting apparatus according to claim 7, wherein the fine structure layer is provided at least on an uppermost surface of the semiconductor light emitting device as a component, and an intermediate material, which is substantially transparent at least to the first light, the second light and the third light and does not contain any of the second material and the third material, is filled in between the fine structure layer and the wavelength conversion member.

9. The semiconductor light emitting apparatus according to claim 8, wherein at least one of the second material and the third material has an average particle diameter smaller than the optical wavelength of the first light in the first material.

10. The semiconductor light emitting apparatus according to claim 7, wherein the wavelength conversion member is configured to emit the second light, the third light, and fourth light with a wavelength different from that of each of the first light, the second light and the third light, and contains a first material transparent at least to the first light, the second light, the third light and the fourth light, and a fourth material that absorbs at least a part of the first light to emit the fourth light, and

the two-dimensional photonic crystal has a period six or more times an optical wavelength of the fourth light.

11. The semiconductor light emitting apparatus according to claim 10, wherein the fine structure layer is provided at least on an uppermost surface of the semiconductor light emitting device as a component, and an intermediate material, which is substantially transparent at least to the first light, the second light, the third light and the fourth light and does not contain any of the second material, the third material and the fourth material, is filled in between the fine structure layer and the wavelength conversion member.

12. The semiconductor light emitting apparatus according to claim 11, wherein at least one of the second material, the third material and the fourth material has an average particle diameter smaller than the optical wavelength of the first light in the first material.

13. The semiconductor light emitting apparatus according to claim 1, wherein the two-dimensional photonic crystal is configured on two or more different main surfaces forming the semiconductor light emitting device, and

wherein the long period units, of the inconstant pitch between the dots that increases and decreases periodically, of respective two-dimensional photonic crystals are different from one another.

14. The semiconductor light emitting apparatus according to claim 1, wherein the long period units, of the inconstant pitch between the dots that increases and decreases periodically, of the two-dimensional photonic crystal have periods at least in one axial direction of the main surface.

15. The semiconductor light emitting apparatus according to claim 1, wherein the long period units, of the inconstant pitch between the dots that increases and decreases periodically, of the two-dimensional photonic crystal have periods at least in independent two axial directions of the main surface.

3. A semiconductor light emitting apparatus comprising:

a semiconductor light emitting device having a layered semiconductor layer configured by layering at least two semiconductor layers, and a light emitting layer to emit first light; and

a wavelength conversion member that covers at least a part of the semiconductor light emitting device, absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light,

wherein the semiconductor light emitting device is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in an out-of-plane direction on one of main surfaces forming the semiconductor light emitting device,

wherein the fine structure layer forms a two-dimensional photonic crystal controlled by a pitch between the dots that is an inconstant pitch that increases and decreases periodically, and

wherein the two-dimensional photonic crystal includes at least two periods that each have a long period unit, of the inconstant pitch between the dots that increases and decreases periodically, of at least six times an optical wavelength of the first light and at least six times an optical wavelength of the second light.