High purity SiOC and SiC, methods compositions and applications
First Claim
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1. A method of making an article comprising ultra pure silicon carbide, the method comprising:
- a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon;
b. curing the combination of the first and second liquids to provided a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen;
c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.9999%; and
,d. forming a single crystal SiC structure by vapor deposition of the ultra pure polymer derived SiC;
wherein the vapor deposed structure is defect free and has a purity of at least 99.9999%.
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Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.
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Citations
41 Claims
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1. A method of making an article comprising ultra pure silicon carbide, the method comprising:
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a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon; b. curing the combination of the first and second liquids to provided a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen; c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.9999%; and
,d. forming a single crystal SiC structure by vapor deposition of the ultra pure polymer derived SiC;
wherein the vapor deposed structure is defect free and has a purity of at least 99.9999%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 19, 20, 21)
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18. A method of making an article comprising ultra pure silicon carbide, the method comprising:
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a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon; b. curing the combination of the first and second liquids to provided a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen; c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.9999%; and
,d. forming a single crystal SiC structure by vapor deposition of the ultra pure polymer derived SiC;
wherein the vapor deposed structure has a purity of at least 99.9999%; and
wherein the single crystal SiC is a boule consisting essentially of alpha type SiC and is essentially free from micropipes.
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22. A method of making a SiC, the method comprising:
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a. placing polymer derived SiC particles in a vapor deposition apparatus, wherein the SiC particles have a purity of at least 99.9999%, and wherein the SiC particles have the ability to resist, and do not form an oxide layer when exposed to air under standard temperatures and pressures, whereby the SiC particles are free from an oxide layer; and
,b. directly vaporizing the SiC particles and depositing the vapors on a target to form crystalline SiC;
wherein the vaporization occurs without the need for a preheating step of the SiC. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A method of making ultra pure silicon carbide, the method comprising:
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a. combining a first liquid comprising silicon, carbon and oxygen with, a second liquid comprising carbon; b. curing the combination of the first and second liquids to provide a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen; and
,c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having less 99.9999% impurities. - View Dependent Claims (37, 38, 39, 40, 41)
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Specification