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High purity SiOC and SiC, methods compositions and applications

  • US 9,657,409 B2
  • Filed: 09/24/2015
  • Issued: 05/23/2017
  • Est. Priority Date: 05/02/2013
  • Status: Active Grant
First Claim
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1. A method of making an article comprising ultra pure silicon carbide, the method comprising:

  • a. combining a first liquid comprising silicon, carbon and oxygen with a second liquid comprising carbon;

    b. curing the combination of the first and second liquids to provided a cured SiOC solid material, consisting essentially of silicon, carbon and oxygen;

    c. heating the SiOC solid material in an inert atmosphere and at a temperature sufficient to convert SiOC to SiC, thereby converting the SiOC solid material to an ultra pure polymer derived SiC having a purity of at least 99.9999%; and

    ,d. forming a single crystal SiC structure by vapor deposition of the ultra pure polymer derived SiC;

    wherein the vapor deposed structure is defect free and has a purity of at least 99.9999%.

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