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Variable conductance gas distribution apparatus and method

  • US 9,657,845 B2
  • Filed: 10/07/2014
  • Issued: 05/23/2017
  • Est. Priority Date: 10/07/2014
  • Status: Active Grant
First Claim
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1. A gas-phase reactor configured for forming semiconductor devices comprising;

  • a reaction chamber;

    a substrate holder disposed within the reaction chamber and configured to hold a semiconductor substrate;

    a vacuum source fluidly coupled to the reaction chamber; and

    a variable conductance gas distribution system disposed over the substrate holder, the variable conductance gas distribution system comprising;

    a gas inlet;

    a first member having one or more first features;

    a second member having one or more second features; and

    a mechanism to move at least one of the first member and the second member relative to the other member to manipulate an amount of gas flow over the semiconductor substrate,wherein, when the gas distribution system is open, gas flows between the one or more first features and the one or more second features,wherein when the gas distribution system is closed, a seal forms between the one or more first features and the one or more second features, andwherein the first member and the second member are spaced apart a first distance for a first process to flow a purge gas through the variable conductance gas distribution system at a first conductance and spaced apart a second distance for a second process to flow one or more reactants through the variable conductance gas distribution system at a second conductance, the first conductance different from the second conductance.

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