Variable conductance gas distribution apparatus and method

• US 9,657,845 B2
• Filed: 10/07/2014
• Issued: 05/23/2017
• Est. Priority Date: 10/07/2014
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Shugrue, John Kevin
• Primary Examiner(s): CAHILL, JESSICA MARIE
• Application Number:
  US14/508,296
• Publication Number:
  US 20160097120A1
• Time in Patent Office: 959 Days
• Field of Search: 15634533, 15634534
• CPC Class Codes: B01D 53/0446 Means for feeding or distributing gases
• CPC Class Codes: B01D 53/047 Pressure swing adsorption
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45589 Movable means, e.g. fans
• CPC Class Codes: F04B 39/1013 the members being of the poppet valve type
• CPC Class Codes: F16K 1/32 Details details of more general applicability F16K25/00 - F16K51/00
• CPC Class Codes: F16K 1/38 of conical shape
• CPC Class Codes: F16K 1/385 contacting in the closed position, over a substantial axial length, a seat surface having the same inclination
• CPC Class Codes: Y10T 137/87265 Dividing into parallel flow paths with recombining
• CPC Class Codes: Y10T 137/87281 System having plural inlets

Abstract

Variable conductance gas distribution systems, reactors and systems including the variable conductance gas distribution systems, and methods of using the variable conductance gas distribution systems, reactors, and systems are disclosed. The variable conductance gas distribution systems allow rapid manipulation of gas-flow conductance through the gas distribution system.

Claims

1. A gas-phase reactor configured for forming semiconductor devices comprising;

a reaction chamber;

a substrate holder disposed within the reaction chamber and configured to hold a semiconductor substrate;

a vacuum source fluidly coupled to the reaction chamber; and

a variable conductance gas distribution system disposed over the substrate holder, the variable conductance gas distribution system comprising;

a gas inlet;

a first member having one or more first features;

a second member having one or more second features; and

a mechanism to move at least one of the first member and the second member relative to the other member to manipulate an amount of gas flow over the semiconductor substrate,

wherein, when the gas distribution system is open, gas flows between the one or more first features and the one or more second features,

wherein when the gas distribution system is closed, a seal forms between the one or more first features and the one or more second features, and

wherein the first member and the second member are spaced apart a first distance for a first process to flow a purge gas through the variable conductance gas distribution system at a first conductance and spaced apart a second distance for a second process to flow one or more reactants through the variable conductance gas distribution system at a second conductance, the first conductance different from the second conductance.

2. The gas-phase reactor of claim 1, wherein the one or more first features are tapered.

3. The gas-phase reactor of claim 1, wherein the one or more first features are frustum shaped.

4. The gas-phase reactor of claim 1, wherein the one or more second features are tapered.

5. The gas-phase reactor of claim 1, wherein the one or more second features are frustum shaped.

6. The gas-phase reactor of claim 1, wherein at least one of the one or more first features and at least one of the one or more second features are concentric with respect to each other.

7. The gas-phase reactor of claim 1, further comprising a reactant gas source coupled to the gas inlet.

8. The gas-phase reactor of claim 1, further comprising a purge gas source coupled to the gas inlet.

9. The gas-phase reactor of claim 1, wherein the mechanism moves the first member and the second member together prior to the gas inlet receiving a reactant gas.

10. The gas-phase reactor of claim 1, wherein the mechanism moves the first member and the second member apart prior to the gas inlet receiving a purge gas.

11. The gas-phase reactor of claim 1, wherein one or more of the first features and the one or more second features comprise apertures to allow gas to flow there through when a seal is formed between the one or more first features and the one or more second features.

12. The gas-phase reactor of claim 1, wherein the mechanism causes the first member to move a distance of between about 0 and about 10 mm.

13. The gas-phase reactor of claim 1, further comprising a coupling element coupled to the one or more first features.

14. The gas-phase reactor of claim 1, further comprising a coupling element coupled to the one or more second features.

15. The gas-phase reactor of claim 1, wherein the first member comprises a plurality of first features concentrically arranged with respect to each other.

16. The gas-phase reactor of claim 1, wherein the second member comprises a plurality of second features concentrically arranged with respect to each other.

17. A gas-phase method, the method comprising the steps of:

using a variable conductance gas distribution system, introducing a reactant gas to a reaction chamber of a reactor;

moving a first member of the variable conductance gas distribution system relative to a second member of the variable conductance gas distribution system to increase fluid conductance of the variable conductance gas distribution system; and

using the variable conductance gas distribution system, introducing a purge gas to the reaction chamber of the reactor,

wherein the first member includes one or more first features and the second member includes one or more second features,

wherein the one or more first features and the one or more second features interact with each other to control an amount of gas flowing through the variable conductance gas distribution system,

wherein when the gas distribution system is closed, a seal forms between the one or more first features and the one or more second features, and

wherein at least one of the one or more first features and the one or more second features comprises an aperture.

18. The gas-phase method of claim 17, further comprising a step of moving the first member of the variable conductance gas distribution system relative to a second member of the variable conductance gas distribution system to decrease fluid conductance of the variable conductance gas distribution system.

19. The gas-phase method of claim 17, wherein the first member comprises a plurality of features that are concentric with respect to each other.