Microbolometer contact systems and methods

• US 9,658,111 B2
• Filed: 05/11/2015
• Issued: 05/23/2017
• Est. Priority Date: 10/09/2009
• Status: Active Grant

• Current Assignee: Teledyne FLIR LLC (Teledyne Technologies Incorporated)
• Original Assignee: FLIR Systems, Inc. (Teledyne Technologies Incorporated)
• Inventors: Kurth, Eric A., Franklin, Patrick
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): Lee, Shun
• Application Number:
  US14/709,383
• Publication Number:
  US 20150247758A1
• Time in Patent Office: 743 Days
• CPC Class Codes: C25D 1/003 3D structures, e.g. superposed patterned layers
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 5/023 Particular leg structure or construction or shape; Nanotubes
• CPC Class Codes: G01J 5/024 Special manufacturing steps or sacrificial layers or layer structures
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a plurality of metal studs each having a first end and a second end and each disposed between the first metal layer and a second metal layer, wherein the first end of each metal stud is disposed on a portion of the first metal layer that is at least partially on the surface of the substrate.

Claims

1. An infrared imaging device comprising:

a substrate having a plurality of contacts, each contact comprising;

a first metal layer, disposed at least partially on a surface of the substrate,

at least a portion of a second metal layer, and

a plurality of discrete metal studs each having a first end and a second end and each disposed between the first metal layer and the second metal layer, wherein the first end of each metal stud is disposed on a portion of the first metal layer that is at least partially on the surface of the substrate, and wherein the second end of each metal stud is disposed on the second metal layer;

wherein at least a portion of the second metal layer covers a surface of the second end of each metal stud and wraps around an outer edge of the surface of the second end of each metal stud, and wherein the portion of the second metal layer that wraps around the outer edges of the second ends forms a depression in the second metal layer;

an infrared detector array coupled to the substrate via a plurality of legs, wherein each leg is coupled to one of the contacts via the plurality of discrete metal studs, wherein at least a portion of the second metal layer forms part of a leg metal layer to couple with an infrared detector within the infrared detector array, and the infrared detector array comprises;

a third metal layer formed on the second metal layer, wherein the third metal layer at least partially fills the depression in the second metal layer, and

a first passivation layer formed on the third metal layer; and

a readout integrated circuit formed within the substrate.

2. The infrared imaging device of claim 1, wherein the infrared detector array comprises a plurality of microbolometers, wherein the leg metal layer couples with a corresponding one of the legs of at least one of the microbolometers, and wherein the third metal layer completely fills the depression in the second metal layer.

3. The infrared imaging device of claim 1, wherein the plurality of metal studs comprises four metal studs.

4. The infrared imaging device of claim 3, wherein the first passivation layer is made of silicon dioxide, and wherein the metal studs are formed by electroplating.

5. The infrared imaging device of claim 4, wherein the second metal layer is formed directly on the first metal layer via the plurality of metal studs with no intervening liner layer between the second metal layer and the first metal layer, wherein the first metal layer forms part of the readout integrated circuit within the substrate, wherein the infrared detector array comprises a plurality of microbolometers, and wherein the second metal layer forms part of the leg metal layer to couple with a corresponding one of the legs of at least one of the microbolometers.

6. The infrared imaging device of claim 1, wherein the infrared detector array comprises a plurality of microbolometers, and wherein each microbolometer comprises:

a resistive material forming a bridge wherein the legs couple the resistive material to the second metal layer, and wherein the first metal layer forms part of the readout integrated circuit within the substrate.

7. A method of forming the contact and at least a portion of one of the legs of claim 1 on the substrate for the infrared detector array, the method comprising:

applying a polyimide coating on the substrate;

applying a photoresist pattern on the polyimide coating;

etching to expose a plurality of portions of the first metal layer on the substrate;

forming the first ends of the plurality of discrete metal studs on a corresponding one of the exposed portions of the first metal layer;

depositing the second metal layer on the second ends of the metal studs so that the second metal layer covers a surface of the second end of each metal stud and wraps around the outer edge of the surface of the second end of each metal stud to form a depression in the second metal layer, wherein the second end of each of the metal studs is disposed opposite the first end of that metal stud;

applying a photoresist pattern on the second metal layer;

depositing the third metal layer on the second metal layer to at least partially fill the depression in the second metal layer;

applying the first passivation layer on the third metal layer and a portion of the second metal layer; and

etching to release and provide the contact.

8. The method of claim 7, further comprising:

applying a photoresist pattern to the substrate;

depositing the first metal layer on the substrate, wherein the first metal layer is coupled to a readout integrated circuit fixated within the substrate; and

wherein the first passivation layer is disposed at a top portion distant from the first metal layer.

9. The method of claim 8, wherein the infrared detector array comprises a plurality of microbolometers, wherein at least a portion of the second metal layer forms part of the leg metal layer to couple with a corresponding leg of at least one of the microbolometers, and wherein the plurality of metal studs are formed by electroplating.

10. The method of claim 7, further comprising:

applying an additional photoresist pattern on the second metal layer before depositing the third metal layer;

wherein the depositing the third metal layer comprises lifting-off a portion of the third metal layer and removing the additional photoresist; and

wherein the etching to release comprises;

applying a further additional photoresist pattern over the first passivation layer,

performing ion milling, and

removing the further additional photoresist pattern remaining.

11. An infrared imaging device comprising:

a substrate having a first metal layer disposed at least partially on a surface of the substrate;

a plurality of metal studs each having a first end and a second end, wherein the first end of each metal stud is formed on the first metal layer on at least a portion disposed on the surface of the substrate;

at least a portion of a second metal layer covering a top surface of the second end of each metal stud and extending continuously between the top surfaces of the second ends of the metal studs, wherein each of the second ends of the plurality of metal studs is disposed on the second metal layer, and wherein at least a portion of the second metal layer covers a surface of the second end of each metal stud and wraps around an outer edge of the surface of the second end of each metal stud;

a depression in the second metal layer formed by at least the portion of the second metal layer that wraps around the outer edges of the second ends;

a third metal layer formed on the second metal layer, wherein the third metal layer at least partially fills the depression in the second metal layer;

a readout integrated circuit disposed within the substrate; and

an infrared detector array coupled to the substrate via a plurality of legs and the plurality of metal studs.

12. The infrared imaging device of claim 11, wherein the infrared detector array comprises a plurality of microbolometers, and wherein the second metal layer forms part of a leg metal layer to couple with a corresponding one of the legs of at least one of the microbolometers.

13. The infrared imaging device of claim 11, wherein the third metal layer completely fills the depression in the second metal layer, and wherein each of the legs further comprises a first passivation layer formed on the third metal layer.

14. The infrared imaging device of claim 13, further comprising a second passivation layer formed on the second metal layer on a side opposite of where the third metal layer is formed, wherein the second passivation layer is disposed at a top portion distant from the first metal layer.

15. The infrared imaging device of claim 14, wherein the first passivation layer is made of silicon dioxide, wherein the second passivation layer is made of silicon nitride, and wherein the leg comprises an etch-stop layer disposed between the plurality of metal studs and the second metal layer, with the metal stud formed by electroplating.

16. The infrared imaging device of claim 11, wherein the contact comprises a plating base layer disposed between each metal stud and the first metal layer.

17. The infrared imaging device of claim 11, wherein the infrared detector array comprises a plurality of microbolometers, and wherein each microbolometer comprises:

a resistive material forming a bridge with the legs coupling the resistive material to the second metal layer, wherein the first metal layer forms part of the readout integrated circuit within the substrate.

18. A method of forming the contact and at least a portion of the legs of claim 11 on the substrate for the infrared detector array, the method comprising:

applying a polyimide coating on the substrate;

applying a photoresist pattern on the polyimide coating;

etching the polyimide coating to expose a plurality of portions of the first metal layer on the substrate;

forming the plurality of metal studs on the first metal layer;

removing the polyimide coating and applying an additional polyimide coating;

planarizing a surface of the additional polyimide coating and the plurality of metal studs;

providing an etch stop layer on the additional polyimide coating and the plurality of metal studs;

applying a passivation layer on the polyimide coating and the etch stop layer;

applying a photoresist pattern on the passivation layer;

etching to expose the etch stop layer;

depositing the second metal layer on the passivation layer and the etch stop layer so that the second metal layer covers the second ends of the metal studs and wraps around the outer edge of the surface of the second end of each metal stud to form the depression in the second metal layer; and

depositing the third metal layer on the second metal layer to at least partially fill the depression in the second metal layer.

19. The method of claim 18, comprising:

applying a photoresist pattern to the substrate;

depositing the first metal layer on the substrate, wherein the first metal layer is coupled to a readout integrated circuit formed within the substrate;

applying an additional passivation layer on the third metal layer and a portion of the second metal layer;

etching to release, wherein the additional passivation layer is disposed at a top portion distant from the substrate, and wherein the etching the polyimide coating and the etching to expose the etch stop layer comprises subsequently removing the photoresist pattern remaining.

20. The method of claim 19, wherein the infrared detector array comprises a plurality of microbolometers, and wherein the second metal layer forms part of a leg metal layer to couple with a corresponding leg of at least one of the microbolometers.

21. The method of claim 20, wherein the passivation layer, the additional passivation layer, and the second metal layer portions form part of a bridge of at least one of the microbolometers.

22. The method of claim 18, wherein the forming the plurality of metal studs comprises electroplating a metal and applying a lap-stop material to form the plurality of metal studs.

23. The method of claim 18, wherein the forming the plurality of metal studs comprises:

depositing a plating base on the polyimide coating and the first metal layer;

performing an electroplating process to form the plurality of metal studs over the first metal layer, wherein the plating base is disposed along sidewalls of each metal stud and between each metal stud and the first metal layer;

etching the plating base; and

applying the additional polyimide coating and applying a lap-stop material on the additional polyimide coating prior to the planarizing of the surface which removes the lap-stop material.

24. The method of claim 23, comprising:

applying an additional lap-stop material on a metal cap that extends across the plurality of metal studs prior to the etching of the plating base; and

wherein the providing the etch stop layer comprises depositing the etch-stop layer on the plurality of metal studs prior to depositing the second metal layer.