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Contactless damage inspection of perimeter region of semiconductor device

  • US 9,658,279 B2
  • Filed: 10/26/2015
  • Issued: 05/23/2017
  • Est. Priority Date: 10/30/2014
  • Status: Active Grant
First Claim
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1. A power semiconductor device, comprising:

  • a semiconductor body comprising an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region, the active semiconductor region having an active surface area and the perimeter semiconductor region having a perimeter surface area; and

    a test structure for contactless testing of the perimeter semiconductor region, the test structure having a resonance frequency in an original configuration and comprising an electrically conductive path mounted on the perimeter surface area, wherein the test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field in the original configuration, the electromagnetic radio frequency test field being provided with a frequency range that includes the resonance frequency of the test structure in the original configuration,wherein the test structure is configured to become detuned in an altered configuration of the test structure caused by mechanical damage in the perimeter semiconductor region, such that the test structure has a significantly different resonance frequency or no resonance frequency in the altered configuration.

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