Low power proportional to absolute temperature current and voltage generator

• US 9,658,637 B2
• Filed: 02/18/2014
• Issued: 05/23/2017
• Est. Priority Date: 02/18/2014
• Status: Active Grant

• Current Assignee: Analog Devices International Unlimited Company (Analog Devices, Inc.)
• Original Assignee: Analog Devices Global Unlimited Company (Analog Devices, Inc.)
• Inventors: Marinca, Stefan
• Primary Examiner(s): Poos, John
• Application Number:
  US14/182,877
• Publication Number:
  US 20150234414A1
• Time in Patent Office: 1,190 Days
• Field of Search: 327109, 327312, 327350, 327427, 327538, 327539, 327540, 327542
• CPC Class Codes: G05F 3/262 using field-effect transistors only
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

A proportional to absolute temperature (PTAT) circuit is provided. By judiciously combining circuit elements into two or more cell it is possible to effectively dump bias current into impedance resistive element of a first cell from other cells of the circuit. As a result the circuit as a whole can operate with smaller resistive elements and therefore occupy less area when implemented in silicon. It is also possible to reduce the supply current that is required for providing specific output currents or voltages.

Claims

1. A proportional to absolute temperature (PTAT) circuit, the circuit comprising:

a first set of circuit components comprising a pair of bipolar transistors operating at different current densities to generate a base-emitter voltage difference as a first voltage component, a resistive load element coupled to an emitter of a bipolar transistor of the set of bipolar transistors, and a bias generator configured to generate a first bias voltage and provide a first bias current to the resistive load element; and

a second set of circuit components operably biased by the first bias voltage and providing a second bias current to the resistive load element of the first set of circuit components, wherein the second set of circuit components is configured to generate at least a second voltage component related to a base-emitter voltage difference.

2. The circuit of claim 1, wherein the at least a second voltage component related to a base-emitter voltage difference is generated from an emitter ratio of a third bipolar transistor operating at a first collector current density and a fourth bipolar transistor operating at a second, lower, collector current.

3. The circuit of claim 1, wherein the circuit is configured to combine the first and at least a second voltage component to provide at an output of the circuit a PTAT voltage that is dependent on the base emitter voltage difference between first and second sets of bipolar transistors operating at different current densities.

4. The circuit of claim 1, wherein the second bias current is coupled into the first set of circuit components at a node where the first bias current is generated.

5. The circuit of claim 2, further comprising:

a third set of circuit components configured to generate a third voltage component related to a base-emitter voltage difference generated from an emitter ratio of a fifth bipolar transistor operating at a first collector current density and a sixth bipolar transistor operating at a second, lower, collector current density;

wherein the third set of circuit components is coupled to the second set of circuit components and is operably biased by a voltage originating within the first set of circuit components.

6. The circuit of claim 5, wherein the third set of circuit components is configured to provide a bias current into the first set of circuit components.

7. The circuit of claim 3, further comprising a resistor across which the PTAT voltage is replicated to generate a PTAT current.

8. The circuit of claim 3, further comprising a MOS device operating in a triode region across which the PTAT voltage is replicated to generate a PTAT current.

9. The circuit of claim 3, further comprising a voltage buffer configured to buffer the PTAT voltage and provide a bias current into the first set of circuit elements.

10. The circuit of claim 3, further comprising:

a circuit element configured to generate a complimentary to absolute temperature (CTAT) voltage component,

wherein the circuit is configured to couple the CTAT voltage component to the PTAT voltage to provide, at an output of the circuit, an output voltage that is first order temperature insensitive.

11. The circuit of claim 10, wherein the CTAT voltage component comprises a bipolar transistor providing a base emitter voltage which is coupled to the PTAT voltage.

12. The circuit of claim 10, wherein CTAT voltage component is provided by a plurality of diode connected transistors coupled to a bipolar transistor, the diode connected transistors effecting a division of a base-emitter voltage originating from the bipolar transistor into three voltage components.

13. The circuit of claim 12, further comprising a resistor string configured to allow an adjustment of the on voltage.

14. A proportional to absolute temperature (PTAT) circuit configured to generate a voltage at an output node of the circuit that is temperature dependent, the circuit comprising:

a plurality of circuit elements coupled to a single biasing current,

a first set of current elements configured to operate as a bias voltage generator, a bias current generator as a first PTAT voltage cell of the circuit, wherein a PTAT voltage is generated at a common node within the first set of circuit elements; and

a second set of circuit elements biased using the bias voltage generated from the first set of circuit elements and configured to return at least one bias current to the common node within the first set of circuit elements, wherein the second set of circuit elements includes a second PTAT cell of the PTAT circuit.

15. The circuit of claim 14, wherein the second set of circuit elements are arranged in at least two individual cells, each individual cell configured to generate a PTAT voltage.

16. The circuit of claim 15, wherein an output PTAT voltage of the circuit is a compound voltage generated by combining individual PTAT voltages from each individual cell.

17. The circuit of claim 16, further comprising a circuit element configured to generate a complimentary to absolute temperature (CTAT) voltage component, the circuit being configured to couple the CTAT voltage component to the output PTAT voltage to provide, at an output of the circuit, an output voltage that is first order temperature insensitive.

18. The circuit of claim 17, wherein the CTAT voltage component comprises a bipolar transistor providing a base emitter voltage which is coupled to the output PTAT voltage.

19. The circuit of claim 17, wherein the CTAT voltage component is provided by a plurality of diode connected transistors coupled to a bipolar transistor, the diode connected transistors effecting a division of a base-emitter voltage originating from the bipolar transistor into three voltage components.

20. The circuit of claim 19, further comprising a resistor string configured to allow an adjustment of the output voltage.

21. A method of generating a proportional to absolute temperature (PTAT) voltage, the method comprising:

coupling a plurality of circuit elements to a single biasing current;

configuring a first set of circuit elements to operate as a bias voltage generator, a bias current generator and as a first PTAT voltage cell of a circuit, wherein a PTAT voltage is generated at a common node within the first set of circuit elements;

biasing a second set of circuit elements using the bias voltage generated from the first set of circuit elements, wherein the second set of circuit elements returns at least one bias current to the common node within the first set of circuit elements;

configuring the second set of circuit elements to operate as a second PTAT cell of the circuit; and

combining PTAT voltages from the first and second PTAT cells of the circuit at an output of the circuit to generate a PTAT voltage.

22. The method of claim 21, further comprising coupling the PTAT voltage to a voltage having a complimentary to absolute temperature (CTAT) form to generate at an output of the circuit a voltage that is first order temperature insensitive.

23. The method of claim 21, further comprising generating a PTAT current by replicating the PTAT voltage across a resistive load.

24. The method of claim 21, further comprising providing a voltage buffer at the output of the circuit to buffer the PTAT voltage.

25. The method of claim 22, further comprising providing a voltage divider configured to divide down the voltage having a complimentary to absolute temperature (CTAT) form.