Power quad flat no-lead (PQFN) package in a single shunt inverter circuit

• US 9,659,845 B2
• Filed: 12/10/2013
• Issued: 05/23/2017
• Est. Priority Date: 12/13/2010
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Inventors: Fernando, Dean, Barbosa, Roel, Takahashi, Toshio
• Primary Examiner(s): Swanson, Walter H
• Application Number:
  US14/102,275
• Publication Number:
  US 20140097531A1
• Time in Patent Office: 1,260 Days
• Field of Search: 257676
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4903 Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49513 having bonding material between chip and die pad
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49541 : Geometry of the lead-frame
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13064 : High Electron Mobility Transistor [HEMT, HFET [heterostructure FET], MODFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A power quad flat no-lead (PQFN) package includes a driver integrated circuit (IC) situated on a leadframe. The PQFN package further includes low-side U-phase, low-side V-phase, and low-side W-phase power switches situated on the leadframe. A logic ground of the leadframe is coupled to a support logic circuit of the driver IC. A power stage ground of the leadframe is coupled to sources of the low-side U-phase, low-side V-phase, and low-side W-phase power switches. The power stage ground can further be coupled to gate drivers of the driver IC.

Claims

1. A power quad flat no-lead (PQFN) package comprising:

a driver integrated circuit (IC) situated on a leadframe;

U-phase, V-phase, and W-phase power switches situated on said leadframe;

a logic ground of said leadframe coupled to an overcurrent protection comparator within said driver IC;

a low-voltage level shifter; and

a power stage ground of said lead frame coupled to sources of said U-phase, V-phase, and W-phase power switches, and further coupled to gate drivers within said driver IC that in turn are coupled to the low-voltage level shifter that is configured to compensate for a voltage differential between said logic ground and said power stage ground.

2. The PQFN package of claim 1, comprising at least one wirebond connecting said power stage ground of said lead frame to said source of said W-phase power switch.

3. The PQFN package of claim 1, comprising at least one wirebond connecting said source of said W-phase power switch to said source of said V-phase power switch.

4. The PQFN package of claim 1, comprising at least one wirebond connecting said source of said V-phase power switch to said source of said U-phase power switch.

5. The PQFN package of claim 1, comprising at least one wirebond connecting a power stage ground terminal of said PQFN package to said source of said W-phase power switch.

6. The PQFN package of claim 1, comprising at least one wirebond connecting a logic ground terminal of said PQFN package to said driver IC.

7. The PQFN package of claim 1, comprising at least one wirebond connecting said source of said U-phase power switch to said gate drivers within said driver IC through said leadframe.

8. The PQFN package of claim 1, wherein said U-phase, V-phase, and W-phase power switches are situated on respective die pads of said leadframe.

9. The PQFN package of claim 1, wherein said U-phase, V-phase, and W-phase power switches are coupled respectively to another U-phase, another V-phase, and another W-phase power switches through said leadframe.

10. The PQFN package of claim 1, wherein said U-phase, V-phase, and W-phase power switches comprise fast-reverse epitaxial diode field effect transistors (FREDFETs).

11. The PQFN package of claim 1, wherein said U-phase, V-phase, and W-phase power switches comprise insulated-gate bipolar transistors (IGBTs).

12. The PQFN package of claim 1, wherein said U-phase, V-phase, and W-phase power switches comprise group III-V transistors.

13. The PQFN package of claim 1, wherein said PQFN package has a footprint of greater than 12 mm by 12 mm.

14. The PQFN package of claim 1, wherein said PQFN package has a footprint of less than 12 mm by 12 mm.