Semiconductor device

• US 9,659,977 B2
• Filed: 04/28/2016
• Issued: 05/23/2017
• Est. Priority Date: 01/30/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hatsumi, Ryo, Shigenobu, Takumi, Goto, Naoto, Jintyou, Masami, Kubota, Daisuke
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US15/140,837
• Publication Number:
  US 20160240566A1
• Time in Patent Office: 390 Days
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/13415 Drop filling process
• CPC Class Codes: G02F 1/1343 Electrodes reflective electrodes G02F1/133553
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G06F 2203/04108 Touchless 2D- digitiser, i.e. digitiser detecting the X/Y position of the input means, finger or stylus, also when it does not touch, but is proximate to the digitiser's interaction surface without distance measurement in the Z direction
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/0446 using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 : with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 28/60 : Electrodes
• CPC Class Codes: H01L 29/24 : including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/41733 : for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 : Ohmic electrodes
• CPC Class Codes: H01L 29/78633 : with a light shield
• CPC Class Codes: H01L 29/7869 : having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Claims

1. A semiconductor device comprising:

a substrate; and

a pixel over the substrate, the pixel comprising;

a transistor comprising;

a channel region comprising In, Ga, Zn and O; and

a gate electrode over the channel region with a first insulating film between the channel region and the gate electrode;

a capacitor over the substrate, the capacitor comprising;

a first electrode comprising In, Ga, Zn and O; and

a second electrode over the first electrode; and

an organic insulating film over the gate electrode, the organic insulating film having a function of blocking light in a particular wavelength region,

wherein a first electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor,

wherein a nanobeam electron diffraction pattern of the channel region has regions with high luminance in a circular pattern, and

wherein the first electrode comprises a portion which does not overlap the first insulating film.

2. The semiconductor device according to claim 1,

wherein an oxide semiconductor film comprises the channel region, and

wherein a conductor film comprises the first electrode.

3. The semiconductor device according to claim 1, wherein a conductor film comprises the second electrode and a pixel electrode.

4. The semiconductor device according to claim 1, wherein the organic insulating film is black.

5. The semiconductor device according to claim 1, wherein the first insulating film comprises a second insulating film and a third insulating film.

6. The semiconductor device according to claim 5,

wherein the second insulating film is capable of oxygen release, and

wherein the second insulating film is positioned over the third insulating film.

7. The semiconductor device according to claim 1, wherein the pixel further comprises a liquid crystal element.

8. The semiconductor device according to claim 1, a concentration of hydrogen contained in the first electrode is higher than or equal to 8×

10¹⁹ atoms/cm³.

9. A display comprising the semiconductor device according to claim 1.

10. An electronic appliance comprising the semiconductor device according to claim 1.

11. The semiconductor device according to claim 1,

wherein a halo pattern is shown in a selected-area electron diffraction pattern of the channel region obtained by using an electron beam having a probe diameter larger than or equal to 50 nm, and

wherein spots are shown in a nanobeam electron diffraction pattern of the channel region obtained by using an electron beam having a probe diameter of 1 nm.

12. The semiconductor device according to claim 1, further comprising:

a planarization film over the transistor and the capacitor; and

an alignment film over the planarization film.

13. The semiconductor device according to claim 1, further comprising:

a nitride insulating film over and in contact with the first electrode of the capacitor; and

an oxide insulating film between the nitride insulating film and the channel region of the transistor.

14. A semiconductor device comprising:

a substrate; and

a pixel over the substrate, the pixel comprising;

a transistor comprising;

a conductive film over the substrate;

a first insulating film over the conductive film;

a channel region over the first insulating film, the channel region comprising In, Ga, Zn and O; and

a gate electrode over the channel region with a second insulating film between the channel region and the gate electrode;

a capacitor over the substrate, the capacitor comprising;

a first electrode comprising In, Ga, Zn and O; and

a second electrode over the first electrode; and

an organic insulating film over the gate electrode, the organic insulating film having a function of blocking light in a particular wavelength region,

wherein a first electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor,

wherein a nanobeam electron diffraction pattern of the channel region has regions with high luminance in a circular pattern, and

wherein the first electrode comprises a portion which does not overlap the first insulating film.

15. The semiconductor device according to claim 14,

wherein an oxide semiconductor film comprises the channel region, and

wherein a conductor film comprises the first electrode.

16. The semiconductor device according to claim 14, wherein a conductor film comprises the second electrode and a pixel electrode.

17. The semiconductor device according to claim 14, wherein the organic insulating film is black.

18. The semiconductor device according to claim 14, wherein the second insulating film comprises a third insulating film and a fourth insulating film.

19. The semiconductor device according to claim 18,

wherein the third insulating film is capable of oxygen release, and

wherein the third insulating film is positioned over the fourth insulating film.

20. The semiconductor device according to claim 14, wherein the pixel further comprises a liquid crystal element.

21. The semiconductor device according to claim 14, a concentration of hydrogen contained in the first electrode is higher than or equal to 8×

10¹⁹ atoms/cm³.

22. A display comprising the semiconductor device according to claim 14.

23. An electronic appliance comprising the semiconductor device according to claim 14.

24. The semiconductor device according to claim 14,

wherein a halo pattern is shown in a selected-area electron diffraction pattern of the channel region obtained by using an electron beam having a probe diameter larger than or equal to 50 nm, and

wherein spots are shown in a nanobeam electron diffraction pattern of the channel region obtained by using an electron beam having a probe diameter of 1 nm.

25. The semiconductor device according to claim 14, further comprising:

a planarization film over the transistor and the capacitor; and

an alignment film over the planarization film.

26. The semiconductor device according to claim 14, further comprising:

a nitride insulating film over and in contact with the first electrode of the capacitor; and

an oxide insulating film between the nitride insulating film and the channel region of the transistor.