Array substrate, method for manufacturing the same, and display device
First Claim
1. A method for manufacturing an array substrate, the array substrate includes a gate driver on array (GOA) circuit area which includes a thin film transistor (TFT) area for outputting a gate row-driving signal and a lead-wire area connected to the TFT area, and a display area which includes a data line and a gate line which are arranged crosswise;
- wherein the GOA circuit area further includes a first electrode and a second electrode, the method comprising;
forming a resin layer having a first via on a substrate on which the TFT area is formed such that the first via penetrates through the resin layer to expose a data-line metal layer of the TFT area;
forming a first electrode on the surface of the resin layer such that the first electrode is electrically connected to the data-line metal layer through the first via;
forming a passivation layer having a second via on the substrate on which the first electrode is formed such that the second via penetrates through the passivation layer, the resin layer, and a gate-insulating layer of the TFT area to expose a gate-line metal layer of the TFT area; and
forming a second electrode on the surface of the passivation layer such that the second electrode is electrically connected to the gate-line metal layer through the second via, to form a capacitor between the first electrode and the second electrode.
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Accused Products
Abstract
An array substrate includes a GOA circuit area and a display area, the GOA circuit area includes a TFT area and a lead-wire area, the display area includes a data line and a gate line. The GOA circuit area is provided with at least one first via and at least one second via, a data-line metal layer is disposed at the bottom of the at least one first via, and a gate-line metal layer is disposed at the bottom of the at least one second via. The GOA circuit area further includes a first electrode and a second electrode, the data-line metal layer is electrically connected to one electrode through the at least one first via, the gate-line metal layer is electrically connected to the other electrode through the at least one second via, such that a capacitor is formed between the first electrode and the second electrode.
22 Citations
4 Claims
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1. A method for manufacturing an array substrate, the array substrate includes a gate driver on array (GOA) circuit area which includes a thin film transistor (TFT) area for outputting a gate row-driving signal and a lead-wire area connected to the TFT area, and a display area which includes a data line and a gate line which are arranged crosswise;
- wherein the GOA circuit area further includes a first electrode and a second electrode, the method comprising;
forming a resin layer having a first via on a substrate on which the TFT area is formed such that the first via penetrates through the resin layer to expose a data-line metal layer of the TFT area; forming a first electrode on the surface of the resin layer such that the first electrode is electrically connected to the data-line metal layer through the first via; forming a passivation layer having a second via on the substrate on which the first electrode is formed such that the second via penetrates through the passivation layer, the resin layer, and a gate-insulating layer of the TFT area to expose a gate-line metal layer of the TFT area; and forming a second electrode on the surface of the passivation layer such that the second electrode is electrically connected to the gate-line metal layer through the second via, to form a capacitor between the first electrode and the second electrode. - View Dependent Claims (2, 3, 4)
- wherein the GOA circuit area further includes a first electrode and a second electrode, the method comprising;
Specification