Method for forming semiconductor components having self-aligned trench contacts
First Claim
1. A method for producing a semiconductor component, the method comprising:
- providing a semiconductor body comprising a first semiconductor material extending to a first surface and at least one trench, the at least one trench extending from the first surface into the semiconductor body, a first insulation layer being arranged in the at least one trench;
forming a second insulation layer on the first surface comprising a recess that overlaps in a projection onto the first surface with the at least one trench;
forming a mask region in the recess;
etching the second insulation layer selectively to the mask region;
depositing a third insulation layer over the first surface; and
etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the at least one trench is exposed at the first surface.
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Accused Products
Abstract
A method for producing a semiconductor component includes providing a semiconductor body having a first semiconductor material extending to a first surface and at least one trench, the at least one trench extending from the first surface into the semiconductor body, a first insulation layer being arranged in the at least one trench. The method further includes forming a second insulation layer on the first surface having a recess that overlaps in a projection onto the first surface with the at least one trench, forming a mask region in the recess, etching the second insulation layer selectively to the mask region, depositing a third insulation layer over the first surface, and etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the at least one trench is exposed at the first surface.
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Citations
20 Claims
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1. A method for producing a semiconductor component, the method comprising:
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providing a semiconductor body comprising a first semiconductor material extending to a first surface and at least one trench, the at least one trench extending from the first surface into the semiconductor body, a first insulation layer being arranged in the at least one trench; forming a second insulation layer on the first surface comprising a recess that overlaps in a projection onto the first surface with the at least one trench; forming a mask region in the recess; etching the second insulation layer selectively to the mask region; depositing a third insulation layer over the first surface; and etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the at least one trench is exposed at the first surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for producing a semiconductor component, the method comprising:
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providing a semiconductor body comprising a first semiconductor material extending to a first surface; forming a trench from the first surface into the semiconductor body; forming a first insulation layer at least on one or more sidewalk of the trench; forming a second insulation layer on the first surface so that the second insulation layer comprises a recess that is;
in a projection onto the first surface, completely arranged within the trench; andforming a mask region comprising one of; filling the recess with a non-crystalline form of the first semiconductor material; and depositing a dielectric material on the second insulation layer and etching the dielectric material using the second insulation layer as an etch-stop. - View Dependent Claims (17, 18, 19, 20)
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Specification