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Method for forming semiconductor components having self-aligned trench contacts

  • US 9,660,047 B2
  • Filed: 06/11/2015
  • Issued: 05/23/2017
  • Est. Priority Date: 01/16/2012
  • Status: Expired due to Fees
First Claim
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1. A method for producing a semiconductor component, the method comprising:

  • providing a semiconductor body comprising a first semiconductor material extending to a first surface and at least one trench, the at least one trench extending from the first surface into the semiconductor body, a first insulation layer being arranged in the at least one trench;

    forming a second insulation layer on the first surface comprising a recess that overlaps in a projection onto the first surface with the at least one trench;

    forming a mask region in the recess;

    etching the second insulation layer selectively to the mask region;

    depositing a third insulation layer over the first surface; and

    etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the at least one trench is exposed at the first surface.

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