Oxide semiconductor thin film transistor including oxygen release layer

• US 9,660,092 B2
• Filed: 08/23/2012
• Issued: 05/23/2017
• Est. Priority Date: 08/31/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Mashiyama, Mitsuo, Handa, Takuya, Okazaki, Kenichi, Yamazaki, Shunpei, Watanabe, Masahiro
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): Reida, Molly
• Application Number:
  US13/592,942
• Publication Number:
  US 20130048978A1
• Time in Patent Office: 1,734 Days
• Field of Search: None
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

Claims

1. A semiconductor device comprising:

a gate electrode;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film;

a source electrode and a drain electrode in electrical contact with the oxide semiconductor film; and

an inorganic insulating film over the oxide semiconductor film, the source electrode, and the drain electrode,

wherein the gate insulating film comprises at least a silicon oxynitride film and a first oxygen release type oxide film over the silicon oxynitride film,

wherein the inorganic insulating film comprises at least a second oxygen release type oxide film and a metal oxide film over the second oxygen release type oxide film,

wherein the metal oxide film comprises aluminum oxide,

wherein the metal oxide film comprising the aluminum oxide has a film density of higher than or equal to 3.2 g/cm³ measured by Rutherford backscattering spectrometry,

wherein an amount of oxygen released from each of the first oxygen release type oxide film and the second oxygen release type oxide film, which is converted to oxygen atoms is greater than or equal to 1×

10²⁰ atoms/cm³ in a thermal desorption spectroscopy, and

wherein the oxide semiconductor film is formed in contact with the first oxygen release type oxide film.

2. The semiconductor device according to claim 1,

wherein each of the first oxygen release type oxide film and the second oxygen release type oxide film comprises silicon oxide.

3. The semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises at least one of oxides of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.

4. The semiconductor device according to claim 1,

wherein the gate electrode comprises at least one element selected from molybdenum, titanium, tantalum, tungsten, aluminum, copper, neodymium, and scandium.

5. The semiconductor device according to claim 1,

wherein a thickness of the metal oxide film is greater than or equal to 50 nm and less than or equal to 100 nm.

6. The semiconductor device according to claim 1, wherein the first oxygen release type oxide film has lower hydrogen concentration than the silicon oxynitride film.

7. A semiconductor device comprising:

a gate electrode;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film;

a source electrode and a drain electrode in electrical contact with the oxide semiconductor film;

an inorganic insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;

an organic insulating film over the inorganic insulating film; and

wherein the gate insulating film comprises at least a silicon oxynitride film and a first oxygen release type oxide film over the silicon oxynitride film,

wherein the inorganic insulating film comprises at least a second oxygen release type oxide film and a metal oxide film over the second oxygen release type oxide film,

wherein the first oxygen release type oxide film is a film of SiOx where x>

2,

wherein a thickness of the silicon oxynitride film is thicker than that of the first oxygen release type oxide film,

wherein the oxide semiconductor film is formed in contact with the first oxygen release type oxide film,

wherein the metal oxide film comprises aluminum oxide,

wherein the metal oxide film comprising the aluminum oxide has a film density of higher than or equal to 3.2 g/cm³ measured by Rutherford backscattering spectrometry, and

wherein an amount of oxygen released from each of the first oxygen release type oxide film and the second oxygen release type oxide film, which is converted to oxygen atoms is greater than or equal to 1×

10²⁰ atoms/cm³ in a thermal desorption spectroscopy.

8. The semiconductor device according to claim 7,

wherein the oxide semiconductor film comprises at least one of oxides of indium, zinc, gallium, zirconium, tin, gadolinium, titanium, and cerium.

9. The semiconductor device according to claim 7,

wherein the gate electrode comprises at least one element selected from molybdenum, titanium, tantalum, tungsten, aluminum, copper, neodymium, and scandium.

10. The semiconductor device according to claim 7,

wherein a thickness of the metal oxide film comprising the aluminum oxide is greater than or equal to 50 nm and less than or equal to 100 nm.

11. The semiconductor device according to claim 7, wherein the first oxygen release type oxide film has lower hydrogen concentration than the silicon oxynitride film.