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Thin film transistor and method of manufacturing the same

  • US 9,660,094 B2
  • Filed: 06/26/2014
  • Issued: 05/23/2017
  • Est. Priority Date: 01/06/2014
  • Status: Active Grant
First Claim
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1. A thin film transistor, comprising:

  • a gate electrode on a substrate;

    a gate insulating layer on the gate electrode;

    a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping at least a portion of the gate electrode;

    a plurality of etch stoppers on the semiconductor layer, anda source electrode and a drain electrode, which are spaced apart from each other and disposed on the etch stoppers and the semiconductor layer,wherein a plurality of channel regions are defined in the semiconductor layer by the plurality of etch stoppers on the semiconductor layer, a width of each channel region being substantially the same as a width of a corresponding one of the etch stoppers, and a space between adjacent ones of the channel regions being substantially the same as a space between corresponding adjacent ones of the etch stoppers, andwherein portions of the semiconductor layer overlapped by the plurality of etch stoppers are not damaged and portions of the semiconductor layer not overlapped by the plurality of etch stoppers are damaged.

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