Thin film transistor and method of manufacturing the same
First Claim
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1. A thin film transistor, comprising:
- a gate electrode on a substrate;
a gate insulating layer on the gate electrode;
a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping at least a portion of the gate electrode;
a plurality of etch stoppers on the semiconductor layer, anda source electrode and a drain electrode, which are spaced apart from each other and disposed on the etch stoppers and the semiconductor layer,wherein a plurality of channel regions are defined in the semiconductor layer by the plurality of etch stoppers on the semiconductor layer, a width of each channel region being substantially the same as a width of a corresponding one of the etch stoppers, and a space between adjacent ones of the channel regions being substantially the same as a space between corresponding adjacent ones of the etch stoppers, andwherein portions of the semiconductor layer overlapped by the plurality of etch stoppers are not damaged and portions of the semiconductor layer not overlapped by the plurality of etch stoppers are damaged.
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Abstract
A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping at least a portion of the gate electrode, a plurality of etch stoppers on the semiconductor layer, and a source electrode and a drain electrode spaced apart from each other and disposed on the etch stoppers and the semiconductor layer, wherein a plurality of channel regions are defined in the semiconductor layer by the etch stoppers on the semiconductor layer.
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Citations
11 Claims
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1. A thin film transistor, comprising:
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a gate electrode on a substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping at least a portion of the gate electrode; a plurality of etch stoppers on the semiconductor layer, and a source electrode and a drain electrode, which are spaced apart from each other and disposed on the etch stoppers and the semiconductor layer, wherein a plurality of channel regions are defined in the semiconductor layer by the plurality of etch stoppers on the semiconductor layer, a width of each channel region being substantially the same as a width of a corresponding one of the etch stoppers, and a space between adjacent ones of the channel regions being substantially the same as a space between corresponding adjacent ones of the etch stoppers, and wherein portions of the semiconductor layer overlapped by the plurality of etch stoppers are not damaged and portions of the semiconductor layer not overlapped by the plurality of etch stoppers are damaged. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a thin film transistor, the method comprising:
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forming a gate electrode on a substrate; forming a gate insulating layer covering the gate electrode; forming a semiconductor layer overlapping at least a portion of the gate electrode; forming a plurality of etch stoppers on at least a portion of the semiconductor layer; and forming an electrode-forming material on the substrate and patterning the electrode-forming material to form a source electrode and a drain electrode spaced apart from each other and disposed on the semiconductor layer and the etch stoppers, wherein during the patterning of the electrode-forming material, portions of the semiconductor layer exposed between the plurality of etch stoppers are removed or damaged and portions of the semiconductor layer on which the plurality of etch stoppers are formed are not removed or damaged. - View Dependent Claims (10, 11)
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Specification