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Semiconductor device and method for manufacturing the same

  • US 9,660,098 B2
  • Filed: 10/15/2015
  • Issued: 05/23/2017
  • Est. Priority Date: 10/17/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide stack comprising;

    an oxide layer; and

    an oxide semiconductor layer over the oxide layer, wherein an electron affinity of the oxide semiconductor layer is higher than an electron affinity of the oxide layer by 0.1 eV or more;

    a gate insulating layer in contact with the oxide stack; and

    a gate electrode layer overlapping with the oxide stack with the gate insulating layer there between,wherein the oxide semiconductor layer has a spin density corresponding to a signal at a g-factor of greater than or equal to 1.90 and less than or equal to 1.95 is 1.5×

    1012 spins/cm2 or less and the gate insulating layer has a spin density corresponding to a signal at a g-factor of greater than or equal to 2.00 and less than or equal to 2.01 is 2×

    1012 spins/cm2 or more in electron spin resonance spectroscopy.

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