Omnidirectional high chroma red structural color with combination semiconductor absorber and dielectric absorber layers

• US 9,664,832 B2
• Filed: 07/07/2015
• Issued: 05/30/2017
• Est. Priority Date: 08/10/2012
• Status: Active Grant

• Current Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Original Assignee: Toyota Motor Engineering & Manufacturing North America Incorporated (Toyota Motor Corporation)
• Inventors: Banerjee, Debasish
• Primary Examiner(s): Cherry, Euncha
• Application Number:
  US14/793,123
• Publication Number:
  US 20150309231A1
• Time in Patent Office: 693 Days
• Field of Search: 359577-590, 428620, 428621, 428622, 428623, 428641, 106404, 106415
• CPC Class Codes: G02B 1/10 Optical coatings produced by application to, or surface treatment of, optical elements G02B1/08 takes precedence
• CPC Class Codes: G02B 5/0825 the reflecting layers comprising dielectric materials only
• CPC Class Codes: G02B 5/0858 the reflecting layers comprising a single metallic layer with one or more dielectric layers
• CPC Class Codes: G02B 5/207 comprising semiconducting materials
• CPC Class Codes: G02B 5/286 having four or fewer layers, e.g. for achieving a colour effect

Abstract

A high-chroma omnidirectional red structural color pigment. The omnidirectional structural color pigment is in the form of a multilayer stack that has a reflective core layer, a semiconductor absorber layer extending across the reflective core layer, a dielectric absorber layer extending across the semiconductor absorber layer and a high index of refraction dielectric layer extending across the dielectric absorber layer. The multilayer stack reflects a single band of visible light with a hue between 0-40°, and preferably between 10-30°, on an a*b* Lab color map. The single band of visible light has a hue shift of less than 30° on the a*b* Lab color map when viewed from all angles between 0-45° normal to an outer surface of the multilayer stack.

Claims

1. An omnidirectional high chroma red structural color comprising:

a multilayer stack having;

a reflective core layer;

a semiconductor absorber layer extending across said reflective core layer;

a dielectric absorber layer extending across said semiconductor absorber layer; and

a high index of refraction dielectric layer extending across said dielectric absorber layer, said high index of refraction dielectric layer having a thickness D that obeys the relation 0.1 QW<

D≦

4 QW where QW is a quarter wave thickness for a target wavelength, said target wavelength having a predefined hue between 0-40°

on an a*b* Lab color map;

said multilayer stack reflecting a single band of visible light with said predefined hue between 0-40°

on said a*b* Lab color map, said single band of visible light having a hue shift within said predefined hue between 0-40°

on said a*b* Lab color map when viewed from all angles between 0-45°

normal to an outer surface of said multilayer stack.

2. The omnidirectional high chroma red structural color of claim 1, wherein said hue is between 10-30°

and said hue shift is within said 10-30°

on said a*b* Lab color map.

3. The omnidirectional high chroma red structural color of claim 1, wherein said reflective core layer has a thickness between 50-200 nanometers, inclusive.

4. The omnidirectional high chroma red structural color of claim 3, wherein said reflective core layer is made from a reflective metal selected from the group consisting of Al, Ag, Pt, Sn and combinations thereof.

5. The omnidirectional high chroma red structural color of claim 3, wherein said reflective core layer is made from a colorful metal selected from the group consisting of Au, Cu, brass, bronze and combinations thereof.

6. The omnidirectional high chroma red structural color of claim 1, wherein said semiconductor absorber layer has a thickness between 5-500 nanometers, inclusive.

7. The omnidirectional high chroma red structural color of claim 6, wherein said semiconductor absorber layer is made from the group consisting of amorphous Si, Ge and combinations thereof.

8. The omnidirectional high chroma red structural color of claim 1, wherein said dielectric absorber layer has a thickness between 5-500 nanometers, inclusive.

9. The omnidirectional high chroma red structural color of claim 8, wherein said dielectric absorber layer is made from Fe₂O₃.

10. The omnidirectional high chroma red structural color of claim 1, wherein said high index of refraction dielectric layer is made from a dielectric material selected from the group consisting of ZnS, TiO₂, HfO₂, Nb₂O₅, Ta₂O₅ and combinations thereof.

11. The omnidirectional high chroma red structural color of claim 1, wherein said reflective core layer is a central reflective core layer and said semiconductor absorber layer is a pair of semiconductor absorber layers extending across opposite sides of said central reflective core layer, said central reflective core layer sandwiched between said pair of semiconductor absorber layers.

12. The omnidirectional high chroma red structural color of claim 11, wherein said dielectric absorber layer is a pair of dielectric absorber layers, said central reflective core layer and said pair of semiconductor absorber layers sandwiched between said pair of high dielectric absorber layers.

13. The omnidirectional high chroma red structural color of claim 1, wherein said high index of refraction dielectric layer is a pair of high index of refraction dielectric layers, said central reflective core layer and said pair of semiconductor absorber layers and said pair of dielectric absorber layers sandwiched between said pair of high dielectric absorber layers.

14. A process for making an omnidirectional high chroma red structural color, the process comprising:

manufacturing a multilayer stack by;

dry depositing a reflective core layer;

dry depositing a semiconductor absorber layer that extends across the reflective core layer;

dry or wet depositing a dielectric absorber layer that extends across the semiconductor absorber layer; and

dry or wet depositing a high index of refraction dielectric layer that extends across the dielectric absorber layer, the high index of refraction dielectric layer having a thickness D that obeys the relation 0.1 QW<

D≦

4 QW where QW is a quarter wave thickness for a target wavelength having a predefined hue between 0-40°

on an a*b* Lab color map;

the multilayer stack reflecting visible light with the predefined hue between 0-40°

on the a*b* Lab color map and having a hue shift within the predefined hue between 0-40°

on the a*b* Lab color map when viewed from all angles between 0-45°

normal to an outer surface of the multilayer stack.

15. The process of claim 14, wherein the reflective core layer has a thickness between 50-200 nanometers, inclusive.

16. The process of claim 15, wherein said reflective core layer is made from a reflective metal selected from the group consisting of Al, Ag, Pt, Sn and combinations thereof.

17. The process of claim 15, wherein the reflective core layer is made from a colorful metal selected from the group consisting of Au, Cu, brass, bronze and combinations thereof.

18. The process of claim 14, wherein the semiconductor absorber layer has a thickness between 5-500 nanometers, inclusive, and is made from the group consisting of amorphous Si, Ge and combinations thereof.

19. The process of claim 14, wherein the dielectric absorber layer has a thickness between 5-500 nanometers, inclusive, and is made from Fe₂O₃.