Wafer-level flipped die stacks with leadframes or metal foil interconnects

• US 9,666,513 B2
• Filed: 11/03/2016
• Issued: 05/30/2017
• Est. Priority Date: 07/17/2015
• Status: Active Grant

• Current Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Original Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Inventors: Prabhu, Ashok S., Katkar, Rajesh, Moran, Sean
• Primary Examiner(s): DANG, PHUC T
• Application Number:
  US15/342,744
• Publication Number:
  US 20170077016A1
• Time in Patent Office: 208 Days
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/24175 the item being metallic
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48471 the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/1029 : the support being a lead frame
• CPC Class Codes: H01L 2225/1035 : the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
• CPC Class Codes: H01L 2225/1064 : Electrical connections provided on a side surface of one or more of the containers
• CPC Class Codes: H01L 2225/107 : Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB
• CPC Class Codes: H01L 2225/1094 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/295 : containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/49541 : Geometry of the lead-frame
• CPC Class Codes: H01L 23/49568 : specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/96 : the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect
• CPC Class Codes: H01L 2924/18165 : of a wire bonded chip
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

An assembly includes a plurality of stacked encapsulated microelectronic packages, each package including a microelectronic element having a front surface with a plurality of chip contacts at the front surface and edge surfaces extending away from the front surface. An encapsulation region of each package contacts at least one edge surface and extends away therefrom to a remote surface of the package. The package contacts of each package are disposed at a single one of the remote surfaces, the package contacts facing and coupled with corresponding contacts at a surface of a substrate nonparallel with the front surfaces of the microelectronic elements therein.

Claims

1. A microelectronic package, comprising:

a microelectronic element having a front surface defining a plane, a rear surface opposite the front surface, and a plurality of edge surfaces between the front and rear surfaces, the microelectronic element having a plurality of chip contacts at the front surface;

a metal die attach pad having an attachment surface underlying and bonded to one of the front or rear surfaces of the microelectronic element;

the package having a plurality of remote surfaces, and an encapsulation region contacting at least one edge surface of the microelectronic element and extending away from the at least one edge surface to a corresponding one of the remote surfaces, the encapsulation region having a major surface substantially parallel to the plane of the microelectronic element; and

a plurality of package contacts at an interconnect surface being a single one of the remote surfaces, the package contacts being electrically coupled with the chip contacts of the microelectronic element, the package contacts defined by leadframe interconnects, the package contacts being configured for electrically connecting the microelectronic package with a corresponding set of substrate contacts at a major surface of a substrate in a state in which the major surface of the substrate is oriented at a substantial angle to the plane of the microelectronic element and is oriented towards the single one of the remote surfaces.

2. The microelectronic package as claimed in claim 1, wherein a portion of the metal die attach pad that is not overlain by the microelectronic element is disposed at a second one of the remote surfaces other than the interconnect surface.

3. The microelectronic package as claimed in claim 2, wherein the portion of the metal die attach pad that is not overlain by the microelectronic element extends above a height of the attachment surface of the metal die attach pad to at least a height of top surfaces of the package contacts.

4. The microelectronic package as claimed in claim 3, wherein the portion of the metal die attach pad that is not overlain by the microelectronic element encloses at least three adjoining edge surfaces of the microelectronic element.

5. The microelectronic package as claimed in claim 4, wherein the portion of the metal die attach pad that is not overlain by the microelectronic element extends above a height of the microelectronic element.

6. The microelectronic package as claimed in claim 3, wherein the portion of the metal die attach pad that is not overlain by the microelectronic element defines a discontinuous metal surface at at least one of the remote surfaces.

7. The microelectronic package as claimed in claim 1, wherein the package contacts comprise features configured to avoid release of the package contacts at the interconnect surface of the encapsulation region.

8. The microelectronic package as claimed in claim 1, further comprising a substantially rigid leadframe element at a second one of the remote surfaces opposite the interconnect surface, the leadframe element having a length dimension parallel to and at least as long as an edge surface of the microelectronic element adjacent the leadframe element, the leadframe element having substantial cross-sectional area transverse to a direction parallel to the length dimension such that the leadframe element functions as a component of a heat spreader thermally coupled to the microelectronic element.

9. The microelectronic package as claimed in claim 1, wherein the package contacts are electrically coupled with the corresponding set of substrate contacts at the major surface of the substrate.

10. The microelectronic package as claimed in claim 1, wherein the microelectronic element is a first microelectronic element, the microelectronic package further comprising a second microelectronic element having front and rear surfaces each defining a plane, edge surfaces between the front and rear surfaces, and chip contacts at the front surface, the second microelectronic element stacked with the first microelectronic element such that the planes of the stacked microelectronic elements are parallel to one another, and

wherein the encapsulation region is in contact with the edge surfaces of each of the stacked microelectronic elements, and the chip contacts of each of the stacked microelectronic elements are electrically coupled with the package contacts.

11. A stacked microelectronic assembly, comprising:

a plurality of stacked encapsulated microelectronic packages, each microelectronic package comprising a microelectronic element having a front surface defining a plane and a rear surface opposite the front surface, a metal die attach pad having an attachment surface underlying and bonded to one of the front or rear surfaces of the microelectronic element, an encapsulation region having a major surface substantially parallel to the plane of the microelectronic element and a plurality of remote surfaces extending away from the major surface, a plurality of package contacts at an interconnect surface being a single one of the remote surfaces, the package contacts defined by leadframe interconnects,

the microelectronic packages stacked such that the planes of the microelectronic elements are parallel to one another and oriented towards one another,

wherein the package contacts are configured for electrically connecting the microelectronic assembly with a corresponding set of substrate contacts at a major surface of a substrate in a state in which the major surface of the substrate is oriented at a substantial angle to the plane of each microelectronic element and is oriented towards each single remote surface of each of the microelectronic packages.

12. The stacked microelectronic assembly as claimed in claim 11, wherein the package contacts of each microelectronic package in the microelectronic assembly are electrically coupled with the corresponding set of substrate contacts at the major surface of the substrate.

13. The microelectronic package as claimed in claim 11, wherein in a package of the stacked microelectronic packages, a portion of the metal die attach pad of such package that is not overlain by the microelectronic element is disposed at a second one of the remote surfaces other than the interconnect surface.

14. The microelectronic package as claimed in claim 13, wherein in the package of the stacked microelectronic packages, the portion of the metal die attach pad of such package that is not overlain by the microelectronic element extends above a height of the attachment surface of the metal die attach pad to at least a height of top surfaces of the package contacts.

15. The microelectronic package as claimed in claim 14, wherein in the package of the stacked microelectronic packages, the portion of the metal die attach pad of such package that is not overlain by the microelectronic element encloses at least three adjoining edge surfaces of the microelectronic element.

16. The stacked microelectronic assembly as claimed in claim 11, wherein a package of the stacked microelectronic packages includes a plurality of the microelectronic elements stacked such that the planes of the stacked microelectronic elements of such package are parallel to one another, and wherein the encapsulation region of the package is in contact with each of the stacked microelectronic elements of the package, and chip contacts of each of the stacked microelectronic elements of the package are electrically coupled with the package contacts of the package.

17. A stacked microelectronic assembly, comprising:

a plurality of stacked encapsulated microelectronic packages, each microelectronic package comprising a microelectronic element having a front surface defining a plane, an encapsulation region having a major surface substantially parallel to the plane of the microelectronic element and a plurality of remote surfaces extending away from the major surface, and a plurality of electrically conductive package contacts at a single one of the remote surfaces, the microelectronic packages stacked such that the planes of the microelectronic elements are parallel to one another and oriented towards one another,

wherein the package contacts are configured for electrically connecting the microelectronic assembly with a corresponding set of substrate contacts at a major surface of a substrate in a state in which the major surface of the substrate is oriented at a substantial angle to the plane of each microelectronic element and is oriented towards each single remote surface of each of the microelectronic packages.

18. The stacked microelectronic assembly as claimed in claim 17, wherein the package contacts of each microelectronic package in the microelectronic assembly are electrically coupled with the corresponding set of substrate contacts at the major surface of the substrate.

19. The stacked microelectronic assembly as claimed in claim 17, wherein at least two of the remote surfaces of each microelectronic package are defined by surfaces of the respective encapsulation region that are spaced apart from the respective microelectronic element.

20. The stacked microelectronic assembly as claimed in claim 17, wherein a package of the stacked microelectronic packages includes a plurality of the microelectronic elements stacked such that the planes of the stacked microelectronic elements of such package are parallel to one another, and wherein the encapsulation region of the package is in contact with each of the stacked microelectronic elements of the package, and chip contacts of each of the stacked microelectronic elements of the package are electrically coupled with the package contacts of the package.