Semiconductor display device

• US 9,666,614 B2
• Filed: 09/09/2014
• Issued: 05/30/2017
• Est. Priority Date: 04/09/2002
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hayakawa, Masahiko, Yamazaki, Shunpei, Kato, Kiyoshi, Osame, Mitsuaki, Murakami, Satoshi
• Primary Examiner(s): Erdem, Fazli
• Application Number:
  US14/481,458
• Publication Number:
  US 20150001545A1
• Time in Patent Office: 994 Days
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

Claims

1. A semiconductor device comprising:

a transistor comprising a gate electrode over a first substrate;

a first insulating film including a first resin over the transistor;

a first conductive film over the transistor, wherein the first conductive film is electrically connected to the transistor;

a pixel electrode over the first conductive film, the pixel electrode being electrically connected to the first conductive film;

a third resin over a part of the pixel electrode;

a second substrate over the pixel electrode;

a sealing material between the first substrate and the second substrate, wherein the first substrate includes a portion which extends beyond a side edge of the second substrate and is not covered by the second substrate;

a second conductive film over the first substrate, the second conductive film overlapping with the portion of the first substrate;

a second resin over the portion of the first substrate, wherein the second resin covers an end portion of the second conductive film; and

a fourth resin over the portion of the first substrate, the fourth resin being formed over the second resin,

wherein the second resin comprises a same material as the first resin, and

wherein the second conductive film overlaps with an FPC connection part of the first substrate.

2. The semiconductor device according to claim 1, wherein the second conductive film is provided in the FPC connection part.

3. The semiconductor device according to claim 1, wherein the second conductive film comprises a same material as the gate electrode.

4. The semiconductor device according to claim 1, further comprising a third conductive film on the second conductive film,

wherein the second conductive film comprises a same material as the gate electrode and the third conductive film comprises a same material as the pixel electrode.

5. The semiconductor device according to claim 1, wherein the first resin and the second resin are continuous.

6. The semiconductor device according to claim 1, wherein each of the first resin and the second resin comprises an acrylic resin.

7. The semiconductor device according to claim 1, wherein each of the first resin and the second resin is photosensitive.

8. The semiconductor device according to claim 1, wherein a section of an edge portion of the second resin curves.

9. The semiconductor device according to claim 1, further comprising:

a first inorganic insulating film which covers the first resin; and

a second inorganic insulating film which covers the second resin.

10. The semiconductor device according to claim 9, wherein each of the first inorganic insulating film and the second inorganic insulating film comprises silicon and nitrogen.

21. The semiconductor device according to claim 1, wherein the fourth resin comprises a same material as the third resin.

11. A semiconductor device comprising:

a first substrate;

a transistor comprising a gate electrode over the first substrate;

a first insulating film including a first resin over the transistor;

a first conductive film over the transistor, wherein the first conductive film is electrically connected to the transistor;

a pixel electrode over the first conductive film, the pixel electrode being electrically connected to the first conductive film;

a third resin over a part of the pixel electrode;

a light emitting layer comprising an organic compound over the pixel electrode, wherein a portion of the light emitting layer is formed over the third resin;

a second electrode over the light emitting layer and the third resin, wherein the pixel electrode is overlapped with the second electrode with the light emitting layer therebetween;

a second substrate over the second electrode;

a sealing material between the first substrate and the second substrate, wherein the first substrate includes a portion which extends beyond a side edge of the second substrate and is not covered by the second substrate;

a second resin over the portion of the first substrate; and

a fourth resin over the portion of the first substrate, the fourth resin being formed over the second resin,

wherein the second resin comprises a same material as the first resin.

12. The semiconductor device according to claim 11, wherein the first resin and the second resin comprises an acrylic resin.

13. The semiconductor device according to claim 11, wherein the first resin and the second resin are photosensitive.

14. The semiconductor device according to claim 11, wherein a section of an edge portion of the second resin curves.

15. The semiconductor device according to claim 11, further comprising an inorganic insulating film over the first resin, wherein the inorganic insulating film comprises silicon and nitrogen.

16. The semiconductor device according to claim 15,

wherein the first resin has a first edge portion,

wherein the inorganic insulating film has a second edge portion, and

wherein the second edge portion does not overlap with the first resin.

17. The semiconductor device according to claim 16,

wherein the first resin has a first opening,

wherein the first opening is surrounded by the first edge portion, and

wherein the inorganic insulating film has a second opening in the first opening.

18. The semiconductor device according to claim 15, wherein the sealing material overlaps with the inorganic insulating film and the first resin.

19. The semiconductor device according to claim 11, further comprising a second conductive film provided on the portion of the first substrate,

wherein the second resin covers an edge of the second conductive film, and

wherein the second conductive film is in electrical contact with the second electrode.

20. The semiconductor device according to claim 11, wherein the first resin and the second resin are continuous.

22. The semiconductor device according to claim 11, wherein the fourth resin comprises a same material as the third resin.

23. A semiconductor device comprising:

a first substrate;

a transistor comprising a gate electrode over the first substrate;

a first inorganic insulating film over the transistor;

a first insulating film including a first resin over the first inorganic insulating film;

a first conductive film over the first inorganic insulating film, wherein the first conductive film is electrically connected to the transistor;

a pixel electrode over the first insulating film, the pixel electrode being electrically connected to the first conductive film;

a third resin over a part of the pixel electrode;

a light emitting layer comprising an organic compound over the pixel electrode, wherein a portion of the light emitting layer is formed over the third resin;

a second electrode over the light emitting layer and the third resin, wherein the pixel electrode is overlapped with the second electrode with the light emitting layer therebetween;

a second substrate over the second electrode;

a sealing material between the first substrate and the second substrate, wherein the first substrate includes a portion which extends beyond a side edge of the second substrate and is not covered by the second substrate;

a second resin over the portion of the first substrate; and

a fourth resin over the portion of the first substrate, the fourth resin being formed over the second resin,

wherein the second resin comprises a same material as the first resin.

24. The semiconductor device according to claim 23, wherein the first resin and the second resin comprises an acrylic resin.

25. The semiconductor device according to claim 23, wherein the first resin and the second resin are photosensitive.

26. The semiconductor device according to claim 23, wherein a section of an edge portion of the second resin curves.

27. The semiconductor device according to claim 23, further comprising a second inorganic insulating film over the first resin, wherein the second inorganic insulating film comprises silicon and nitrogen.

28. The semiconductor device according to claim 27,

wherein the first resin has a first edge portion,

wherein the second inorganic insulating film has a second edge portion, and

wherein the second edge portion does not overlap with the first resin.

29. The semiconductor device according to claim 28,

wherein the first resin has a first opening,

wherein the first opening is surrounded by the first edge portion, and

wherein the second inorganic insulating film has a second opening in the first opening.

30. The semiconductor device according to claim 27, wherein the sealing material overlaps with the second inorganic insulating film and the first resin.

31. The semiconductor device according to claim 23, further comprising a second conductive film provided on the portion of the first substrate,

wherein the second resin covers an edge of the second conductive film, and

wherein the second conductive film is in electrical contact with the second electrode.

32. The semiconductor device according to claim 23, wherein the first resin and the second resin are continuous.

33. The semiconductor device according to claim 23, wherein the fourth resin comprises a same material as the third resin.