Semiconductor device and method for manufacturing the same
First Claim
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1. A display device comprising:
- a substrate;
a first conductive film over the substrate;
a first insulating film over the first conductive film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film;
a source wiring on and in contact with the second insulating film and electrically connected to the oxide semiconductor film through a first contact hole in the second insulating film;
a common electrode over the second insulating film;
a pixel electrode on and in contact with the second insulating film and electrically connected to the oxide semiconductor film through a second contact hole in the second insulating film;
wherein the pixel electrode and the common electrode are formed over the same layer, wherein the pixel electrode has comb-shaped portions, wherein the first conductive film overlaps the first contact hole, wherein the first conductive film overlaps the second contact hole, and wherein the pixel electrode has a stacked-layer structure;
a counter electrode over the pixel electrode.
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Abstract
An object is to reduce the number of photomasks used for manufacturing a transistor and manufacturing a display device to less than the conventional one. The display device is manufactured through, in total, three photolithography steps including one photolithography step which serves as both a step of forming a gate electrode and a step of forming an island-like semiconductor layer, one photolithography step of forming a contact hole after a planarization insulating layer is formed, and one photolithography step which serves as both a step of forming a source electrode and a drain electrode and a step of forming a pixel electrode.
22 Citations
16 Claims
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1. A display device comprising:
- a substrate;
a first conductive film over the substrate;
a first insulating film over the first conductive film;
an oxide semiconductor film over the first insulating film;
a second insulating film over the oxide semiconductor film;
a source wiring on and in contact with the second insulating film and electrically connected to the oxide semiconductor film through a first contact hole in the second insulating film;
a common electrode over the second insulating film;
a pixel electrode on and in contact with the second insulating film and electrically connected to the oxide semiconductor film through a second contact hole in the second insulating film;
wherein the pixel electrode and the common electrode are formed over the same layer, wherein the pixel electrode has comb-shaped portions, wherein the first conductive film overlaps the first contact hole, wherein the first conductive film overlaps the second contact hole, and wherein the pixel electrode has a stacked-layer structure;
a counter electrode over the pixel electrode. - View Dependent Claims (2, 3, 4, 9, 10, 11, 12)
- a substrate;
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5. A display device comprising:
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a substrate; a first conductive film over the substrate; a first insulating film over the first conductive film; an oxide semiconductor film over the first insulating film; a second insulating film over the oxide semiconductor film; a source wiring on and in contact with the second insulating film and electrically connected to the oxide semiconductor film through a first contact hole in the second insulating film; a common electrode over the second insulating film; a pixel electrode on and in contact with the second insulating film and electrically connected to the oxide semiconductor film through a second contact hole in the second insulating film; a capacitor electrically connected to the pixel electrode; wherein the pixel electrode and the common electrode are formed over the same layer, wherein the first conductive film overlaps the first contact hole, wherein the first conductive film overlaps the second contact hole, and wherein the pixel electrode has comb-shaped portions. - View Dependent Claims (6, 7, 8, 13, 14, 15, 16)
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Specification