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Semiconductor device

  • US 9,666,723 B2
  • Filed: 03/23/2015
  • Issued: 05/30/2017
  • Est. Priority Date: 07/22/2011
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising a memory cell, the memory cell comprising a transistor and a capacitor,wherein the transistor comprises:

  • an oxide semiconductor film comprising;

    a channel formation region;

    a pair of first regions with the channel formation region therebetween; and

    a pair of second regions with the channel formation region therebetween;

    a source electrode layer and a drain electrode layer over the oxide semiconductor film;

    a gate electrode layer over the oxide semiconductor film; and

    a gate insulating film between the oxide semiconductor film and the gate electrode layer,wherein the capacitor comprises one of the pair of the first regions and one of the pair of second regions,wherein the one of the pair of first regions of the capacitor functions as a dielectric of the capacitor,wherein the one of the pair of first regions and the one of the pair of second regions are stacked, and the other of the pair of first regions and the other of the pair of second regions are stacked,wherein a resistance value of the pair of first regions is higher than a resistance value of the pair of second regions, andwherein the oxide semiconductor film comprises a carrier concentration being less than or equal to 1×

    1012 /cm3.

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