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Method for manufacturing a compound film

  • US 9,666,745 B2
  • Filed: 07/26/2013
  • Issued: 05/30/2017
  • Est. Priority Date: 09/12/2007
  • Status: Active Grant
First Claim
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1. An apparatus for forming a compound film layer that comprises a CIGS material, comprising:

  • a deposition chamber comprising a deposition zone;

    a flexible substrate having a deposition surface and a non-deposition surface, wherein the flexible substrate comprises a metal-containing layer that has a surface that forms at least part of the deposition surface;

    a substrate transport device that is configured to transfer the flexible substrate in a first direction through the deposition zone of the deposition chamber when forming the compound film layer;

    a deposition source block disposed in the deposition zone, comprising;

    a first deposition source that is configured to deliver a flux of a first material to the deposition surface of the flexible substrate as the flexible substrate is transferred through the deposition zone, wherein a heated region of the first deposition source contains the first material which consists essentially of gallium (Ga); and

    a second deposition source that is configured to deliver a flux of a second material to the deposition surface of the flexible substrate as the flexible substrate is transferred through the deposition zone, wherein the first and second deposition sources are disposed a distance apart along the first direction, and a heated region of the second deposition source contains the second material which consists essentially of indium (In);

    a measurement device having an x-ray detector and either an x-ray source or an electron source that are positioned over the non-deposition surface of the flexible substrate and directly over the deposition source block within the deposition zone, wherein the non-deposition surface is opposed to the deposition surface of the flexible substrate, and the flexible substrate is disposed between the measurement device and the deposition source block; and

    a controller that is configured to;

    determine a ratio of the first material to the second material deposited on the deposition surface of the flexible substrate based on information received from the x-ray detector of the measurement device, wherein the x-ray detector is configured to detect K-line fluorescence radiation only or K-line and L-line fluorescence radiation, and the determined ratio is generated by analyzing the detected fluorescent radiation wavelengths, andadjust an amount of the first material provided by the first deposition source or an amount of the second material provided by the second deposition source to the deposition surface-based on the determined ratio.

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