Method of increasing the thickness of colloidal nanosheets and materials consisting of said nanosheets

• US 9,670,062 B2
• Filed: 10/19/2012
• Issued: 06/06/2017
• Est. Priority Date: 10/19/2011
• Status: Active Grant

• Current Assignee: Nexdot
• Original Assignee: Nexdot
• Inventors: Mahler, Benoit
• Primary Examiner(s): WEDDLE, ALEXANDER MARION
• Application Number:
  US14/352,873
• Publication Number:
  US 20140287237A1
• Time in Patent Office: 1,691 Days
• Field of Search: 427215, 428403, 428404
• CPC Class Codes: B01J 27/04 Sulfides
• CPC Class Codes: B01J 27/0573 Selenium; Compounds thereof
• CPC Class Codes: B01J 27/0576 Tellurium; Compounds thereof
• CPC Class Codes: B01J 35/23 in a colloidal state
• CPC Class Codes: B01J 35/40 characterised by dimensions, e.g. grain size in a colloidal state B01J35/23; crystallite size B01J35/77
• CPC Class Codes: B01J 35/58 Fabrics or filaments
• CPC Class Codes: B05D 1/00 Processes for applying liquids or other fluent materials B05D5/00, B05D7/00 take precedence
• CPC Class Codes: B82B 1/005 Constitution or structural means for improving the physical properties of a device
• CPC Class Codes: B82B 3/0033 Manufacture or treatment of substrate-free structures, i.e. not connected to any support
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C01B 19/007 Tellurides or selenides of metals C01B19/002 takes precedence
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 29/127 Quantum box structures
• CPC Class Codes: H01L 31/035218 the quantum structure being quantum dots
• CPC Class Codes: Y10T 428/2991 Coated
• CPC Class Codes: Y10T 428/2993 Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

Abstract

A process of growth in the thickness of at least one facet of a colloidal inorganic sheet. By sheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions great compared to the thickness, typically more than 5 times the thickness. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness. The process allows the deposition of at least one monolayer of atoms on at least one inorganic colloidal sheet, this monolayer being constituted of atoms of the type of those contained or not in the sheet. Homostructured and heterostructured materials resulting from such process as well as the applications of the materials are also described.

Claims

1. A process of growth in the thickness of at least one face of at least one initial inorganic colloidal nanosheet by deposition of at least one layer on all or part of the initial nanosheet, comprising contacting the at least one initial inorganic colloidal nanosheet with at least one solution of precursors of a material of the at least one layer, wherein a particle comprising the at least one initial inorganic colloidal nanosheet partially or completely covered with said at least one layer of the material is obtained after reaction of the at least one solution of precursors on the at least one initial inorganic colloidal nanosheet.

2. The process according to claim 1, wherein the initial nanosheet is suspended in an organic medium.

3. The process according to claim 1, wherein a stabilizing compound is furthermore added when contacting the initial nanosheet with the solution of precursor of the material to be deposited, wherein the stabilizing compound comprises an organic ligand.

4. The process according to claim 1, wherein the particle obtained after reaction is purified.

5. The process according to claim 1, wherein the initial nanosheet comprises at least one material different from the material of the at least one layer deposited.

6. The process according to claim 1, wherein the initial nanosheet comprises a material identical to the material of the at least one layer deposited.

7. The process according to claim 1, wherein the initial sheet comprises a material that is identical to the material of the at least one layer deposited, and the material is MxEy, wherein:

M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and a mixture thereof,

E is selected from the group consisting of O, S, Se, Te, N, P, As, F, Cl, Br, I, and a mixture thereof, and

x and y are independently a decimal number from 0 to 5.

8. The process according to claim 1, wherein the material comprising the initial sheet and the material comprising the at least one layer deposited comprise a material MxEy, wherein:

M is selected from the group consisting of Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Ti, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and a mixture thereof,

E is selected from the group consisting of O, S, Se, Te, N, P, As, F, Cl, Br, I, and a mixture thereof, and

x and y are independently a decimal number from 0 to 5.