MRAM word line power control scheme
First Claim
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1. An apparatus comprising:
- a memory macro comprising a Magnetoresistive Random Access Memory (MRAM) and a command decoder; and
a power generation module configured to provide different power levels to a word line of the MRAM in response to at least one of a write command or a read command;
wherein the power generation module comprises;
a buffer configured to receive the write command and the read command and provide a wait time;
a selector coupled to the buffer and not coupled to the command decoder, the selector configured to select a first power level for the word line based on the write command or a second power level for the word line based on the read command, wherein the selector is further configured to apply the wait time between selection of the first power level and selection of the second power level; and
an isolation circuit configured to couple an output of the selector and the word line.
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Abstract
Systems, circuits and methods for controlling word line (WL) power levels at a WL of a Magnetoresistive Random Access Memory (MRAM). The disclosed power control scheme uses existing read/write commands and an existing power generation module associated with the MRAM to supply and control WL power levels, thereby eliminating the cost and increased die-size of schemes that control WL power through relatively large and expensive power control switches and control circuitry on the MRAM macro.
17 Citations
15 Claims
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1. An apparatus comprising:
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a memory macro comprising a Magnetoresistive Random Access Memory (MRAM) and a command decoder; and a power generation module configured to provide different power levels to a word line of the MRAM in response to at least one of a write command or a read command; wherein the power generation module comprises; a buffer configured to receive the write command and the read command and provide a wait time; a selector coupled to the buffer and not coupled to the command decoder, the selector configured to select a first power level for the word line based on the write command or a second power level for the word line based on the read command, wherein the selector is further configured to apply the wait time between selection of the first power level and selection of the second power level; and an isolation circuit configured to couple an output of the selector and the word line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of controlling word line power to a memory macro comprising a Magnetoresistive Random Access Memory (MRAM) comprising:
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receiving a write command and a read command at a command decoder provided in the memory macro; receiving a write command and a read command at a buffer provided in a power generation module; providing a wait time by the buffer; controlling a selector of the power generation module for selecting a first power level for a word line of the MRAM based on the write command or a second power level for the word line based on the read command, and for applying the wait time between selecting the first power level and selecting the second power level, wherein the selector is coupled to the buffer and not coupled to the command decoder; and coupling an output of the selector with the word line using an isolation circuit. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification