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Semiconductor device

  • US 9,673,214 B2
  • Filed: 03/16/2016
  • Issued: 06/06/2017
  • Est. Priority Date: 10/07/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an element region disposed on a substrate, semiconductor elements being collocated in the element region; and

    a peripheral region disposed on the substrate, the peripheral region surrounding the element region, whereinthe element region extends in a first direction parallel to the substrate and includes a plurality of wiring layers laminated on the substrate,the peripheral region includes a peripheral layer arranged to surround the element region,the peripheral layer includes a first part extending in the first direction and a second part extending in a second direction intersecting the first direction,the first part and the second part have mutually different cross-section structures,the first part is constituted of a second material having an internal stress with an opposite sign to an internal stress of a first material constituting the wiring layer, andthe second part is constituted of a third material having an internal stress with an identical sign to the internal stress of the first material.

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