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Semiconductor device

  • US 9,673,234 B2
  • Filed: 05/11/2016
  • Issued: 06/06/2017
  • Est. Priority Date: 12/12/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first transistor over a substrate, the first transistor comprising;

    a first gate electrode;

    a first insulating layer over the first gate electrode;

    a first oxide semiconductor film over the first gate electrode with the first insulating layer interposed therebetween, the first oxide semiconductor film comprising a first channel formation region;

    a second oxide semiconductor film on the first semiconductor film;

    a second insulating layer over the second oxide semiconductor film;

    a second gate electrode over the second oxide semiconductor film with the second insulating layer interposed therebetween; and

    a first source electrode and a first drain electrode, wherein each of the first source electrode and the first drain electrode is in contact with the second oxide semiconductor film, anda second transistor over the substrate, the second transistor comprising;

    a third oxide semiconductor film over and in contact with the first insulating layer, the third oxide semiconductor film comprising a second channel formation region; and

    a third insulating layer over and in contact with the third oxide semiconductor film,wherein each of the first oxide film, the second oxide semiconductor film and the third oxide semiconductor film comprises indium and a second metal element different from indium, andwherein an atomic ratio of indium in the first oxide semiconductor film is larger than an atomic ratio of indium in the second oxide semiconductor film and an atomic ratio of indium in the third oxide semiconductor film.

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