Photosensitive imaging devices and associated methods
First Claim
1. A photosensitive imager device, comprising:
- a plurality of semiconductor devices including at least one semiconductor substrate having a light incident side and multiple doped regions forming at least one junction;
a textured region coupled to the light incident side of the at least one semiconductor substrate and positioned to interact with electromagnetic radiation;
said textured region having structures with sizes in a range of about 50 nm to about 20 microns, andat least one isolation feature operable to isolate the plurality of semiconductor devices from each other.
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Abstract
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.
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Citations
23 Claims
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1. A photosensitive imager device, comprising:
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a plurality of semiconductor devices including at least one semiconductor substrate having a light incident side and multiple doped regions forming at least one junction; a textured region coupled to the light incident side of the at least one semiconductor substrate and positioned to interact with electromagnetic radiation;
said textured region having structures with sizes in a range of about 50 nm to about 20 microns, andat least one isolation feature operable to isolate the plurality of semiconductor devices from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification