Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer

• US 9,673,284 B2
• Filed: 04/16/2015
• Issued: 06/06/2017
• Est. Priority Date: 11/21/2012
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Hikosaka, Toshiki, Harada, Yoshiyuki, Nunoue, Shinya, Sugiyama, Naoharu, Yoshida, Hisashi
• Primary Examiner(s): Li, Meiya
• Assistant Examiner(s): Albrecht, Peter M
• Application Number:
  US14/688,290
• Publication Number:
  US 20150221728A1
• Time in Patent Office: 782 Days
• Field of Search: 257101-103, 257190, 257618, 257623, 257E21119, 257E21135, 257E33028, 257E33034
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/267 in different semiconductor regions , e.g. heterojunctions H01L29/263 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of Al_xGa_1-xN (0<x≦1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration not less than 7×10¹⁹/cm³ and not more than 4×10²⁰/cm³. The first GaN layer is provided on the first Si-containing layer. The first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface. The second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided on the second Si-containing layer. The functional layer is provided on the stacked body. The functional layer includes a nitride semiconductor.

Claims

1. A nitride semiconductor device, comprising:

a stacked body comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer,

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and

a functional layer provided on the stacked body and including a nitride semiconductor,

wherein the first Si-containing layer comprises a first plurality of discontinuous islands or is a first film having a first opening, and

the second Si-containing layer comprises a second plurality of discontinuous islands or is a second film having a second opening.

2. The device according to claim 1, wherein

the first GaN layer comprises a plurality of first dislocations communicating with the oblique surface,

the second GaN layer comprises a plurality of third dislocations,

at least one of the third dislocations is continuous with the first dislocations via the second Si-containing layer, and

a number of the third dislocations continuous with the first dislocations is less than a number of the first dislocations.

3. The device according to claim 1, wherein

the protrusion of the first GaN layer further comprises a top surface parallel to the upper surface of the first Si-containing layer,

the first GaN layer comprises:

a plurality of first dislocations communicating with the oblique surface, and

a plurality of second dislocations communicating with the top surface of the first GaN layer,

the second GaN layer comprises a plurality of third dislocations,

at least one of the third dislocations is continuous with the second dislocations, and

a ratio of a number of the third dislocations continuous with the first dislocations to a number of the plurality of first dislocations is lower than a ratio of a number of the third dislocations continuous with the second dislocations to a number of the second dislocations.

4. The device according to claim 1, wherein a height of the protrusion of the first GaN layer is not less than 100 nm and not more than 1000 nm.

5. The device according to claim 1, wherein the stacked body further comprises an AlGaN layer of Al_xGa_1-xN (0<

x≦

1) having an upper surface, and the first Si-containing layer contacts the upper surface of the AlGaN layer.

6. The device according to claim 1, wherein the stacked body comprises:

a first portion having a first Si concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³,

a second portion having a second Si concentration lower than the first Si concentration,

a third portion provided between the first portion and the second portion and having a third Si concentration, wherein the third Si concentration is lower than the first Si concentration and higher than the second Si concentration,

a fourth portion provided between the third portion and the second portion and having a fourth Si concentration, wherein the fourth Si concentration is lower than the third Si concentration and higher than the second Si concentration,

a fifth portion provided between the first portion and the third portion, wherein a Si concentration of the fifth portion changes along a thickness of the fifth portion with a rate higher than a change of Si concentration along a thickness of the third portion,

a sixth portion provided between the third portion and the fourth portion, wherein a Si concentration of the sixth portion changes along a thickness of the sixth portion with a rate higher than the change of Si concentration along the thickness of the third portion and higher than a change of Si concentration along a thickness of the fourth portion, and

a seventh portion provided between the fourth portion and the second portion, wherein a Si concentration of the seventh portion changes along a thickness of the seventh portion with a rate higher than the change of Si concentration along the thickness of the fourth portion and higher than a change of Si concentration along a thickness of the second portion.

7. The device according to claim 6, wherein the third Si concentration is not less than 3×

10¹⁸/cm³ and not more than 5×

10¹⁹/cm³.

8. The device according to claim 6, wherein

a thickness of the first portion is not less than 1 nm and not more than 200 nm,

the thickness of the third portion is not less than 100 nm and not more than 1000 nm, and

the thickness of the fourth portion is not less than 300 nm and not more than 2500 nm.

9. The device according to claim 1, further comprising:

a buffer layer comprising a second nitride semiconductor,

wherein the stacked body is provided on the buffer layer.

10. The device according to claim 9, further comprising:

a stacked intermediate layer provided between the buffer layer and the stacked body and comprising;

a GaN intermediate layer;

an AlN intermediate layer provided on the GaN intermediate layer; and

an AlGaN intermediate layer provided on the AlN intermediate layer.

11. The device according to claim 9, further comprising:

a substrate,

wherein the buffer layer is disposed between the substrate and the stacked body.

12. The device according to claim 11, wherein the substrate is a silicon substrate.

13. A nitride semiconductor wafer, comprising:

a substrate;

a buffer layer provided on the substrate and comprising a nitride semiconductor; and

a stacked body provided on the buffer layer and comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer,

wherein the first Si-containing layer comprises a first plurality of discontinuous islands or is a first film having a first opening, and

the second Si-containing layer comprises a second plurality of discontinuous islands or is a second film having a second opening.

14. The wafer according to claim 13, wherein

the first GaN layer comprises a plurality of first dislocations communicating with the oblique surface,

the second GaN layer comprises a plurality of third dislocations, at least one of the third dislocations is continuous with the first dislocations via the second Si-containing layer, and

a number of the third dislocations continuous with the first dislocations is less than a number of the first dislocations.

15. The wafer according to claim 13, wherein

the protrusion of the first GaN layer further comprises a top surface parallel to the upper surface of the first Si-containing layer,

the first GaN layer comprises:

a plurality of first dislocations communicating with the oblique surface, and

a plurality of second dislocations communicating with the top surface of the first GaN layer,

the second GaN layer comprises a plurality of third dislocations,

at least one of the third dislocations is continuous with the second dislocations, and

a ratio of a number of the third dislocations continuous with the first dislocations to a number of the plurality of first dislocations is lower than a ratio of a number of the third dislocations continuous with the second dislocations to a number of the second dislocations.

16. The wafer according to claim 13, wherein a height of the protrusion of the first GaN layer is not less than 100 nm and not more than 1000 nm.

17. The wafer according to claim 13, wherein the stacked body further comprises an AlGaN layer of Al_xGa_1-xN (0<

x≦

1) having an upper surface, and the first Si-containing layer contacts the upper surface of the AlGaN layer.

18. The wafer according to claim 13, further comprising:

a stacked intermediate layer provided between the buffer layer and the stacked body and comprising;

a GaN intermediate layer;

an AlN intermediate layer provided on the GaN intermediate layer; and

an AlGaN intermediate layer provided on the AlN intermediate layer.

19. The wafer according to claim 13, wherein the substrate is a silicon substrate.

20. A method for forming a nitride semiconductor layer, comprising:

forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, such that the first Si-containing layer has an upper surface having a first region and a second region;

forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and

forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer,

wherein the first Si-containing layer comprises a first plurality of discontinuous islands or is a first film having a first opening, and

the second Si-containing layer comprises a second plurality of discontinuous islands or is a second film having a second opening.

21. The method according to claim 20, further comprising:

forming an AlGaN layer of Al_xGa_1-xN (0<

x≦

1) between the first Si-containing layer and the buffer layer such that the first Si-containing layer contacts an upper surface of the AlGaN layer.

22. A nitride semiconductor device, comprising:

a stacked body comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer,

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and

a functional layer provided on the stacked body and including a nitride semiconductor,

wherein the first Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening, and

the second Si-containing layer comprises SiN.

23. A nitride semiconductor device, comprising:

a stacked body comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer,

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and

a functional layer provided on the stacked body and including a nitride semiconductor,

wherein the first Si-containing layer comprises SiN, and

the second Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening.

24. A nitride semiconductor device, comprising:

a stacked body comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region,

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer,

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer, and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer; and

a functional layer provided on the stacked body and including a nitride semiconductor,

wherein each of the first Si-containing layer and the second Si-containing layer comprises SiN.

25. A nitride semiconductor wafer, comprising:

a substrate;

a buffer layer provided on the substrate and comprising a nitride semiconductor; and

a stacked body provided on the buffer layer and comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer,

wherein the first Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening, and

the second Si-containing layer comprises SiN.

26. A nitride semiconductor wafer, comprising:

a substrate;

a buffer layer provided on the substrate and comprising a nitride semiconductor; and

a stacked body provided on the buffer layer and comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer,

wherein the first Si-containing layer comprises SiN, and

the second Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening.

27. A nitride semiconductor wafer, comprising:

a substrate;

a buffer layer provided on the substrate and comprising a nitride semiconductor; and

a stacked body provided on the buffer layer and comprising;

a first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, the first Si-containing layer having an upper surface, the upper surface of the first Si-containing layer having a first region and a second region;

a first GaN layer provided on the first region and including a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

a second Si-containing layer provided on the first GaN layer and comprising Si, a portion of the second Si-containing layer physically contacting the second region of the upper surface of the first Si-containing layer; and

a second GaN layer provided on the second Si-containing layer and physically contacting the portion of the second Si-containing layer,

wherein each of the first Si-containing layer and the second Si-containing layer comprises SiN.

28. A method for forming a nitride semiconductor layer, comprising:

forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, such that the first Si-containing layer has an upper surface having a first region and a second region;

forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and

forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer,

wherein the first Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening, and

the second Si-containing layer comprises SiN.

29. A method for forming a nitride semiconductor layer, comprising:

forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, such that the first Si-containing layer has an upper surface having a first region and a second region;

forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and

forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer,

wherein the first Si-containing layer comprises SiN, and

the second Si-containing layer comprises a plurality of discontinuous islands or is a film having an opening.

30. A method for forming a nitride semiconductor layer, comprising:

forming a first Si-containing layer on a buffer layer provided on a substrate, the buffer layer including a nitride semiconductor, the first Si-containing layer comprising Si at a concentration not less than 7×

10¹⁹/cm³ and not more than 4×

10²⁰/cm³, such that the first Si-containing layer has an upper surface having a first region and a second region;

forming a first GaN layer on the first region of the upper surface of the first Si-containing layer such that the first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface of the first Si-containing layer;

forming a second Si-containing layer comprising Si on the first GaN layer such that a portion of the second Si-containing layer physically contacts the second region of the upper surface of the first Si-containing layer; and

forming a second GaN layer on the second Si-containing layer such that the second GaN layer physically contacts the portion of the second Si-containing layer,

wherein each of the first Si-containing layer and the second Si-containing layer comprises SiN.