Silicon carbide semiconductor device including conductivity layer in trench

• US 9,673,288 B2
• Filed: 04/17/2013
• Issued: 06/06/2017
• Est. Priority Date: 04/19/2012
• Status: Active Grant

• Current Assignee: DENSO Corporation, Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Original Assignee: DENSO Corporation, Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Inventors: Chida, Kazumi, Soejima, Narumasa, Watanabe, Yukihiko, Takeuchi, Yuichi
• Primary Examiner(s): HUBER, ROBERT T
• Application Number:
  US14/387,425
• Publication Number:
  US 20150048382A1
• Time in Patent Office: 1,511 Days
• Field of Search: 257 77, 257E29104
• CPC Class Codes: H01L 21/044 Conductor-insulator-semiconductor electrodes
• CPC Class Codes: H01L 21/0465 using masks
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

In a silicon carbide semiconductor device, a p-type SiC layer is disposed in a corner of a bottom of a trench. Thus, even if an electric field is applied between a drain and a gate when a MOSFET is turned off, a depletion layer in a pn junction between the p-type SiC layer and an n⁻ type drift layer greatly extends toward the n⁻ type drift layer, and a high voltage caused by an influence of a drain voltage hardly enters a gate insulating film. Hence, an electric field concentration within the gate insulating film can be reduced, and the gate insulating film can be restricted from being broken. In this case, although the p-type SiC layer may be in a floating state, the p-type SiC layer is formed in only the corner of the bottom of the trench. Thus, the deterioration of the switching characteristic is relatively low.

Claims

1. A silicon carbide semiconductor device comprising:

a silicon carbide substrate that is of either a first conductivity type, or a second conductivity type that is opposite the first conductivity type;

a drift layer that is disposed on the substrate, and made of a first conductivity type silicon carbide lower in impurity concentration than the substrate;

a base region that is disposed on the drift layer, and made of a second conductivity type silicon carbide;

a source region that is disposed on the base region, and made of a first conductivity type silicon carbide higher in impurity concentration than the drift layer;

a contact region that is connected to the base region, and made of a second conductivity type silicon carbide higher in impurity concentration than the base region;

a trench that extends to a position deeper than the base region from a surface of the source region;

a second conductivity type layer that is disposed in a bottom of the trench, and is made of a second conductivity type silicon carbide;

a gate insulating film that is disposed on an inner wall surface of the trench on the second conductivity type layer;

a gate electrode that is disposed on the gate insulating film within the trench;

a source electrode that is electrically connected to the base region through the source region and the contact region; and

a drain electrode that is disposed on a rear side of the substrate,

wherein the silicon carbide semiconductor device has an inversion type semiconductor switching element with a trench gate structure that forms an inversion type channel region on a surface portion of the base region located on a side surface of the trench through control of an application voltage to the gate electrode, and allows a current to flow between the source electrode and the drain electrode through the source region and the drift layer;

wherein the trench defines a longitudinal direction in one direction, and the bottom of the trench has a predetermined width;

wherein the gate insulating film contacts a bottom surface of the trench;

wherein the second conductivity type layer disposed in the bottom of the trench includes a first corner portion and a second corner portion;

wherein the first corner portion and the second corner portion of the second conductivity type layer are disposed at opposite corners of the bottom of the trench and separated from each other by the gate insulating film, which contacts the bottom surface of the trench, in a width direction of the trench in a cross-section taken along a depth direction and the width direction of the trench; and

wherein each of the first corner portion and the second corner portion has a triangular round shape in the cross-section taken along the depth direction and the width direction of the trench, the triangular round shape being defined by two sides that contact the side surface of the trench and the bottom surface of the trench and one side that contacts the gate insulating film.

2. The silicon carbide semiconductor device according to claim 1, wherein

at least a part of the side surface of the trench is provided with a coupling layer made of a second conductivity type silicon carbide, and

the base region and the second conductivity type layer are coupled with each other by the coupling layer.

3. The silicon carbide semiconductor device according to claim 2, wherein

an impurity concentration of the second conductivity type layer, which is 1×

10¹⁷/cm³ or higher, and an impurity concentration of the coupling layer are the same.

4. The silicon carbide semiconductor device according to claim 2, wherein

the impurity concentration of the coupling layer is higher than an impurity concentration of the base region.

5. A method of manufacturing the silicon carbide semiconductor device according to claim 1, comprising:

forming the trench to a position deeper than the base region from the surface of the source region; and

after the forming of the trench, conducting a heat treatment under a hydraulic atmosphere mixed with a second conductivity type dopant gas to subject the inner wall surface of the trench to hydrogen etching, and to form the second conductivity type layer in the corner of the bottom of the trench by epitaxial growth taking the second conductivity type dopant gas.

6. The method of manufacturing the silicon carbide semiconductor device according to claim 5, further comprising activation-annealing to activate an ion implantation layer including the contact layer, wherein

the activation-annealing is conducted simultaneously by the heat treatment for conducting the hydrogen etching.

7. The method of manufacturing the silicon carbide semiconductor device according to claim 5, wherein

a TMA is used as the second conductivity type dopant gas.

8. The method of manufacturing the silicon carbide semiconductor device according to claim 5, wherein

a B₂H₆ is used as the second conductivity type dopant gas.

9. The silicon carbide semiconductor device according to claim 1, wherein

the triangular round shape is a triangular shape having two straight sides and one round side.

10. The silicon carbide semiconductor device according to claim 1, wherein

the two sides that define the triangular round shape and contact the side surface and the bottom surface of the trench are straight, and

the one side that defines the triangular round shape and contacts the gate insulating film is rounded.