Semiconductor device having modified profile metal gate

• US 9,673,292 B2
• Filed: 11/25/2015
• Issued: 06/06/2017
• Est. Priority Date: 01/18/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Huang, Yu-Lien, Tsai, Ming-Huan, Chen, Zhao-Cheng, Liu, Chi-Wen, Wann, Clement Hsingjen
• Primary Examiner(s): Luu, Chuong A
• Assistant Examiner(s): Fortich, Rodolfo D
• Application Number:
  US14/952,733
• Publication Number:
  US 20160079383A1
• Time in Patent Office: 559 Days
• Field of Search: 257 88, 257288, 257368, 257383, 257410
• CPC Class Codes: H01L 21/02697 Forming conducting materials on a substrate
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/4958 with a multiple layer structure
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

A semiconductor device having a semiconductor substrate with a dielectric layer disposed thereon. A trench is defined in the dielectric layer. A metal gate structure is disposed in the trench. The metal gate structure includes a first layer and a second layer disposed on the first layer. The first layer extends to a first height in the trench and the second layer extends to a second height in the trench; the second height is greater than the first height. In some embodiments, the second layer is a work function metal and the first layer is a dielectric. In some embodiments, the second layer is a barrier layer.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate having a top surface; and

a gate structure disposed over the semiconductor substrate, wherein the gate structure includes;

a first layer of a substantially U-shaped configuration and extending to a first height above the top surface;

a second layer having a substantially U-shaped configuration and extending to a second height above the top surface;

a third layer having a substantially U-shaped configuration and extending to a third height above the top surface, wherein each of the first, second and third heights are different, and wherein the first height is less than at least one of the second and third heights;

a fill layer disposed on the first, second and third layers wherein a top surface of the fill layer is disposed at a fourth height from the top surface of the semiconductor substrate, wherein the fourth height is greater than the first, second and third heights;

sidewall spacers disposed adjacent the gate structure, wherein the sidewall spacers extend to the fourth height.

2. The device of claim 1, wherein the first layer has a first portion with a top surface substantially parallel a top surface of the semiconductor substrate and a second portion that extends above the top surface of the first portion, wherein the second portion defines the first height.

3. The device of claim 1, wherein the first layer is a gate dielectric layer and the second layer is a metal work function layer.

4. The device of claim 1, wherein the third height is less than the second height.

5. The device of claim 1, wherein the third layer is a work function metal layer, the second layer is a barrier layer and the first layer is a gate dielectric layer.

6. The device of claim 1, wherein the third height is greater than the second height.

7. The device of claim 1, wherein the third layer is a work function metal layer, the second layer is a barrier layer and the first layer is a gate dielectric layer.

8. The device of claim 1, wherein the second layer is at least one of a barrier layer and a work function metal layer and the first layer is a gate dielectric layer.

9. The semiconductor device of claim 1, wherein the fill metal layer has an interface with the first layer and the second layer.

10. The semiconductor device of claim 1, wherein the gate structure further includes an interfacial layer underlying the first layer, wherein the interfacial layer extends to the fourth height.

11. The semiconductor device of claim 1, wherein the second layer is TaN.

12. The semiconductor device of claim 1, wherein the third layer is a metal layer providing a work function for the gate structure.

13. The semiconductor device of claim 1, wherein the first layer is a high-k gate dielectric layer.

14. The semiconductor device of claim 1, wherein the second and third heights are both greater than the first height.

15. The semiconductor device of claim 1, wherein the second height is greater than the first height and the third height is less than the second height.

16. A semiconductor device comprising:

a gate structure having;

an interfacial layer with a bottom portion and two side portions extending vertically above the bottom portion to a first height;

a gate dielectric layer over the interfacial layer and having a bottom portion and two side portions extending vertically above the bottom portion to a second height;

a metal work function layer over the interfacial layer and having a bottom portion and two side portions extending vertically above the bottom portion to a third height, wherein each of the two side portions are defined by a first and a second opposing sidewall; and

a fill metal layer disposed over the metal work function layer and interfacing the first and second opposing sidewalls of each of the two side portions of the metal work function layer, and wherein each of the first, second and third heights are different.

17. The device of claim 16, wherein the third height is greater than the second height and less than the first height.

18. The device of claim 16, wherein the second height is greater than the third height and less than the first height.

19. The device of claim 16, further comprising:

a TaN layer interposing the metal work function layer and the gate dielectric layer, wherein the TaN layer has a fourth height different from the second and third heights.