Semiconductor device and method for manufacturing the same
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a first insulating layer over a substrate, wherein the first insulating layer is an oxygen-excess silicon oxide layer;
forming an oxide semiconductor layer over the first insulating layer;
forming a gate insulating layer over the oxide semiconductor layer;
forming a gate electrode over the gate insulating layer;
forming a pair of oxynitride semiconductor regions by implanting an ion including nitrogen into the oxide semiconductor layer with the gate electrode used as a mask;
forming a wiring electrically connected to one of the pair of oxynitride semiconductor regions; and
heating the substrate with a substrate temperature higher than or equal to 150°
C. and lower than or equal to 600°
C. after forming the pair of oxynitride semiconductor regions.
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Abstract
A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first insulating layer over a substrate, wherein the first insulating layer is an oxygen-excess silicon oxide layer; forming an oxide semiconductor layer over the first insulating layer; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode over the gate insulating layer; forming a pair of oxynitride semiconductor regions by implanting an ion including nitrogen into the oxide semiconductor layer with the gate electrode used as a mask; forming a wiring electrically connected to one of the pair of oxynitride semiconductor regions; and heating the substrate with a substrate temperature higher than or equal to 150°
C. and lower than or equal to 600°
C. after forming the pair of oxynitride semiconductor regions. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating surface over a substrate; forming a first insulating layer covering the oxide semiconductor layer; forming a conductive layer over the first insulating layer; processing the conductive layer and the first insulating layer so as to expose a part of a surface of the oxide semiconductor layer, thereby forming a gate electrode and a gate insulating layer; implanting an ion including nitrogen into the oxide semiconductor layer through the part of the surface of the oxide semiconductor layer which is exposed, thereby forming a pair of oxynitride semiconductor regions in the oxide semiconductor layer; and heating the substrate with a substrate temperature higher than or equal to 150°
C. and lower than or equal to 600°
C. after forming the pair of oxynitride semiconductor regions. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor layer over an insulating surface over a substrate; forming a first insulating layer covering the oxide semiconductor layer; forming a conductive layer over the first insulating layer; processing the conductive layer and the first insulating layer so as to expose a part of a surface of the oxide semiconductor layer, thereby forming a gate electrode and a gate insulating layer; adding nitrogen into the oxide semiconductor layer through the part of the surface of the oxide semiconductor layer which is exposed with the gate electrode used as a mask; and heating a substrate with a substrate temperature higher than or equal to 150°
C. and lower than or equal to 600°
C. after the step of adding nitrogen into the oxide semiconductor layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsEndo, Yuta, Noda, Kosei, Sasaki, Toshinari
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Primary Examiner(s)CARPENTER, ROBERT K
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Application NumberUS14/448,015Publication NumberTime in Patent Office1,041 DaysField of SearchUS Class CurrentCPC Class CodesH01L 21/02 Manufacture or treatment of...H01L 21/02112 characterised by the materi...H01L 21/02403 OxidesH01L 21/28 Manufacture of electrodes o...H01L 21/425 producing ion implantationH01L 21/477 Thermal treatment for modif...H01L 29/42384 for thin film field effect ...H01L 29/518 the insulating material con...H01L 29/66969 of devices having semicondu...H01L 29/78618 characterised by the drain ...H01L 29/7869 having a semiconductor body...
