Method for manufacturing semiconductor device

• US 9,673,336 B2
• Filed: 01/09/2012
• Issued: 06/06/2017
• Est. Priority Date: 01/12/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Moore, Whitney T
• Assistant Examiner(s): GALVIN III, JOSEPH M
• Application Number:
  US13/345,791
• Publication Number:
  US 20120175625A1
• Time in Patent Office: 1,975 Days
• Field of Search: 257 66
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A transistor having an oxide semiconductor film in a channel formation region and a manufacturing method thereof are disclosed. The transistor is formed by the steps of: forming a base insulating over a substrate; forming an oxide semiconductor film over the base insulating film; forming a conductive film over the oxide semiconductor film; processing the conductive film to form a source electrode and a drain electrode; processing the oxide semiconductor film; forming a gate insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; and forming a gate electrode over the gate insulating film. The aforementioned manufacturing method allows the formation of a transistor in which a side surface of the oxide semiconductor film is not in direct contact with bottom surfaces of the source electrode and the drain electrode, which contributes to the extremely small leak current of the transistor.

Claims

1. A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a semiconductor film;

forming a conductive film over the semiconductor film;

heating the conductive film formed over the semiconductor film;

forming a first resist mask over the conductive film after the heating step;

processing the conductive film using the first resist mask to form a source electrode and a drain electrode;

forming a second resist mask over the semiconductor film after processing the conductive film; and

processing the semiconductor film using the second resist mask.

2. The method according to claim 1, wherein the semiconductor film comprises an oxide semiconductor.

3. The method according to claim 1, further comprising the step of heating the semiconductor film before forming the conductive film.

4. The method according to claim 1, further comprising the steps of:

forming a gate insulating film over the source electrode and the drain electrode; and

forming a gate electrode over the gate insulating film to form a channel formation region in the semiconductor film.

5. A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a base insulating film over a substrate;

forming a semiconductor film over the base insulating film;

forming a conductive film over the semiconductor film;

heating the substrate and the conductive film formed over the semiconductor film;

forming a first resist mask over the conductive film after the heating step;

processing the conductive film using the first resist mask to form a source electrode and a drain electrode after the heating step;

forming a second resist mask over the semiconductor film after processing the conductive film;

processing the semiconductor film using the second resist mask after processing the conductive film to form a second semiconductor film;

forming a gate insulating film over the second semiconductor film, the source electrode and the drain electrode; and

forming a gate electrode over the gate insulating film to form a channel formation region in the semiconductor film.

6. The method according to claim 5, wherein the semiconductor film comprises an oxide semiconductor.

7. The method according to claim 5, further comprising the step of heating the substrate after forming the semiconductor film and before forming the conductive film.

8. The method according to claim 5, wherein the second semiconductor film comprises an oxide semiconductor.

9. The method according to claim 8, further comprising the step of forming an interlayer insulating film over the gate electrode and heating the interlayer insulating film.