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Method for manufacturing semiconductor device

  • US 9,673,336 B2
  • Filed: 01/09/2012
  • Issued: 06/06/2017
  • Est. Priority Date: 01/12/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:

  • forming a semiconductor film;

    forming a conductive film over the semiconductor film;

    heating the conductive film formed over the semiconductor film;

    forming a first resist mask over the conductive film after the heating step;

    processing the conductive film using the first resist mask to form a source electrode and a drain electrode;

    forming a second resist mask over the semiconductor film after processing the conductive film; and

    processing the semiconductor film using the second resist mask.

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