Methods of forming memory arrays
First Claim
1. A method of forming a memory array, comprising:
- forming first access/sense material over a semiconductor substrate;
patterning the first access/sense material into first lines extending along a first direction;
the first lines comprising a first series of access/sense lines;
forming programmable material over the first lines;
patterning the programmable material into diagonal lines that cross the first lines;
the diagonal lines extending along a diagonal direction that is not parallel to the first direction and that is not orthogonal to the first direction;
forming second access/sense material over the diagonal lines;
patterning the second access/sense material into second lines extending along a second direction;
the second direction being substantially orthogonal to the first direction;
the second lines comprising a second series of access/sense lines; and
transferring a pattern from the second lines into the programmable material to singulate the programmable material into individual memory cells;
the programmable material within the memory cells having sidewalls which extend diagonally relative to sidewalls of the access/sense lines of the first and second series;
each of the memory cells being uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series.
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Accused Products
Abstract
Some embodiments include a memory array having a first series of access/sense lines which extend along a first direction, a second series of access/sense lines over the first series of access/sense lines and which extend along a second direction substantially orthogonal to the first direction, and memory cells vertically between the first and second series of access/sense lines. Each memory cell is uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series. The memory cells have programmable material. At least some of the programmable material within each memory cell is a polygonal structure having a sidewall that extends along a third direction which is different from the first and second directions. Some embodiments include methods of forming memory arrays.
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Citations
20 Claims
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1. A method of forming a memory array, comprising:
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forming first access/sense material over a semiconductor substrate; patterning the first access/sense material into first lines extending along a first direction;
the first lines comprising a first series of access/sense lines;forming programmable material over the first lines; patterning the programmable material into diagonal lines that cross the first lines;
the diagonal lines extending along a diagonal direction that is not parallel to the first direction and that is not orthogonal to the first direction;forming second access/sense material over the diagonal lines; patterning the second access/sense material into second lines extending along a second direction;
the second direction being substantially orthogonal to the first direction;
the second lines comprising a second series of access/sense lines; andtransferring a pattern from the second lines into the programmable material to singulate the programmable material into individual memory cells;
the programmable material within the memory cells having sidewalls which extend diagonally relative to sidewalls of the access/sense lines of the first and second series;
each of the memory cells being uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a memory array, comprising:
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forming a stack over a semiconductor substrate;
the stack comprising a first region of programmable material over a first access/sense material;patterning the stack into first lines extending along a first direction;
the first lines comprising a first series of access/sense lines;forming a second region of programmable material over the first lines; patterning the second region of programmable material into diagonal lines that cross the first lines;
the diagonal lines extending along a diagonal direction that is not parallel to the first direction and that is not orthogonal to the first direction;transferring a pattern from the diagonal lines into the first region of the programmable material to singulate the first region of the programmable material into first programmable material portions of memory cells;
the first programmable material portions being configured as first polygonal structures having a first peripheral shape;forming second access/sense material over the diagonal lines; patterning the second access/sense material into second lines extending along a second direction;
the second direction being substantially orthogonal to the first direction;
the second lines comprising a second series of access/sense lines;transferring a pattern from the second lines into the second region of the programmable material to singulate the second region of the programmable material into second programmable material portions of the memory cells;
the second programmable material portions being configured as second polygonal structures having a second peripheral shape different from the first peripheral shape; andwherein each of the memory cells is uniquely addressed by a combination of an access/sense line from the first series and an access/sense line from the second series. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method of forming a memory array, comprising:
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forming first access/sense material over a semiconductor substrate; patterning the first access/sense material into first lines extending laterally relative to an upper surface of the substrate along a first direction;
the first lines comprising a first series of access/sense lines;forming programmable material over the first lines; patterning the programmable material into diagonal lines that cross the first lines;
the diagonal lines extending along a diagonal direction that is not parallel to the first direction and that is not orthogonal to the first direction;forming second access/sense material over the diagonal lines; patterning the second access/sense material into second lines extending along a second direction;
the second direction being substantially orthogonal to the first direction;
the second lines comprising a second series of access/sense lines; andsingulating the programmable material into individual memory cells that extend vertically upward relative to the upper surface of the substrate;
the programmable material within the memory cells having sidewalls which extend diagonally relative to sidewalls of the access/sense lines of the first and second series. - View Dependent Claims (19, 20)
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Specification