Ultra low-voltage circuit and method for nanopower boost regulator

• US 9,673,696 B2
• Filed: 10/18/2013
• Issued: 06/06/2017
• Est. Priority Date: 03/13/2013
• Status: Active Grant

• Current Assignee: Analog Devices International Unlimited Company (Analog Devices, Inc.)
• Original Assignee: Analog Devices, Inc.
• Inventors: Shao, Bin, Lu, Yanfeng
• Primary Examiner(s): ROSARIO BENITEZ, GUSTAVO A
• Application Number:
  US14/051,702
• Publication Number:
  US 20140268936A1
• Time in Patent Office: 1,327 Days
• CPC Class Codes: H02M 1/36 Means for starting or stopping converters
• CPC Class Codes: H02M 3/07 using capacitors charged and discharged alternately by semiconductor devices with control electrode , e.g. charge pumps
• CPC Class Codes: H02M 3/155 using semiconductor devices only
• CPC Class Codes: H03K 2217/0081 Power supply means, e.g. to the switch driver

Abstract

At least one embodiment provides a method for a nanopower boost regulator to startup from an ultra-low-voltage (such as 0.3V˜0.5V) for energy harvesting applications. The method does not necessarily require a special process or any external components such as mechanical switches. The startup circuit can include an asynchronous boost circuit to charge up an output with stacked power NMOS transistors, a ring oscillator, and/or a charge pump, along with accompanying circuitry.

Claims

1. An apparatus for providing an ultra-low-voltage startup for energy harvesting, the apparatus comprising:

a ring oscillator that is powered by a power supply;

a first charge pump that is driven by a clock output of the ring oscillator and that outputs a boosted voltage;

a second charge pump to produce an output, wherein a boosted clock signal is generated by a clock boost generation element, when the output of the second charge pump is higher than a designated voltage;

a first N-type metal-oxide-semiconductor (NMOS) transistor having a gate connected to the first charge pump and that receives the boosted voltage; and

a second NMOS transistor in series with the first NMOS transistor, the second NMOS transistor having a drain connected to a source of the first NMOS transistor and a gate that receives an input at least based on the boosted clock signal.

2. The apparatus of claim 1, further comprising:

a capacitor, wherein one or more photovoltaic cells charge up the capacitor with an input voltage.

3. The apparatus of claim 1, further comprising:

an undervoltage lockout (UVLO) unit that enables the ring oscillator, once an input voltage to the UVLO unit is higher than an undervoltage lockout threshold.

4. The apparatus of claim 1, further comprising:

a clock boost generation element, wherein, when an output of the second charge pump is higher than the designated voltage, the clock boost generation element, which includes a first clock gen unit and a second clock gen unit, begins to work.

5. The apparatus of claim 1, further comprising:

a detector, wherein, if a voltage at a drain of the first NMOS transistor nears an input voltage, the detector outputs a signal to turn off the second NMOS transistor.

6. The apparatus of claim 1, wherein an asynchronous boost regulator works in a discontinuous conduction mode, and an associated work process is concluded as two phases, wherein, in a first phase, a PV cell charges an input capacitor, and, in a second phase, power stored at the input capacitor is transferred to an output through the asynchronous boost regulator.

7. The apparatus of claim 1, further comprising:

a buffer that outputs to the gate of the second NMOS transistor.

8. The apparatus of claim 1, further comprising:

a clock boost generation element configured to generate a clock having a high value higher than an input voltage while a detector consumes no power from the second charge pump.

9. The apparatus of claim 1, further comprising:

a clock boost generation element that includes a first clock gen unit configured to generate a clock having a high value twice an input voltage, and a second clock gen unit that receives the clock having the high value twice the input voltage and is configured to generate a clock having a high value quadruple the input voltage.

10. The apparatus of claim 1, wherein the second charge pump is driven by the clock output of the ring oscillator.

11. The apparatus of claim 1, further comprising:

a clock boost generation element that increases a swing of the clock output.

12. The apparatus of claim 1, further comprising:

a clock boost generation element; and

a buffer that receives an output of the clock boost generation element and outputs to the gate of the second NMOS transistor.

13. The apparatus of claim 1, further comprising:

an inductor current saturation detector, wherein, once a current through an inductor connected to a drain of the first NMOS transistor is saturated, the inductor current saturation detector outputs a signal to turn off the second NMOS transistor.

14. The apparatus of claim 1, further comprising:

a zener diode at an output of the first charge pump to prevent the output of the first charge pump from rising above a designated level.

15. The apparatus of claim 1, further comprising:

a clock boost generation element; and

a pre-regulator configured to clamp an input voltage to a first designated voltage, thereby preventing an output of the second charge pump and the clock boost generation element from being greater than a second designated voltage.

16. The apparatus of claim 5, wherein the voltage at the drain of the first NMOS transistor nears an input voltage due to an on resistance of the first and second NMOS transistors or if the input voltage falls below a threshold of a UVLO.

17. The apparatus of claim 13, wherein the current through the inductor saturates due to an on resistance of the second NMOS transistor.

18. A method implemented by an ultra-low-voltage startup for energy harvesting, the method comprising:

generating a clock output with a ring oscillator;

boosting an input voltage at least based on the clock output, to produce a boosted voltage with a first charge pump;

producing an output of a second charge pump, wherein a boosted clock signal is generated by a clock boost generation element, when the output of the second charge pump is higher than a designated voltage;

receiving the boosted voltage at a gate of a first N-type metal-oxide-semiconductor (NMOS) transistor; and

receiving, at a gate of a second NMOS transistor, the second NMOS transistor in series with the first NMOS transistor, an input at least based on the boosted clock signal, wherein a drain of the second NMOS transistor is connected to a source of the first NMOS transistor.

19. The method of claim 18, further comprising:

clamping an input voltage to a first designated voltage to prevent outputs of the second charge pump and a clock boost generation element from being above a second designated voltage.

20. The method of claim 18, further comprising:

generating a clock having a high value twice an input voltage; and

generating a clock having a high value quadruple the input voltage, at least based on the clock having the high value twice the input voltage.