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High power FET switch

  • US 9,673,802 B2
  • Filed: 04/27/2011
  • Issued: 06/06/2017
  • Est. Priority Date: 04/27/2010
  • Status: Active Grant
First Claim
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1. A stacked field effect transistor (FET) switch for a time-variant input signal, the stacked FET switch comprising:

  • a FET device stack operable in an open state and in a closed state, the FET device stack comprising a plurality of FET devices coupled in series to form the FET device stack;

    each of the plurality of FET devices having a gate contact, a drain contact, and a source contact, the plurality of FET devices including a first FET device wherein either the drain contact or the source contact of the first FET device is at a first end of the FET device stack;

    a first decoupling path configured to pass the time-variant input signal during the open state of the FET device stack, the first decoupling path being connected to the FET device stack such that a voltage drop of the time-variant input signal bypasses the FET device stack from the drain contact of the first FET device to the source contact of the first FET device during the open state of the FET device stack.

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