Two-step interconnect testing of semiconductor dies
First Claim
1. A method of testing an interconnect in a semiconductor die, comprising:
- providing the semiconductor die, wherein the semiconductor die comprises;
a first interconnect-under-test arranged between a first electrical contact element and a second electrical contact element, anda second interconnect-under-test arranged between a third electrical contact element and a fourth electrical contact element,wherein the second interconnect-under-test is connected to the first interconnect-under test via an electrical component;
testing a first signal path in the semiconductor die for manufacturing defects, the first signal path comprising a first part of the first interconnect-under-test and a first deviation path from the first interconnect-under-test through the electrical component to the third electrical contact element, thus obtaining first test results, wherein testing the first signal path comprises probing the first electrical contact element and the third electrical contact element;
testing a second signal path in the semiconductor die for manufacturing defects, the second signal path comprising a second part of the first interconnect-under-test and a second deviation path from the first interconnect-under-test through the electrical component to the fourth electrical contact element, thus obtaining second test results, wherein testing the second signal path comprises probing the second electrical contact element and the fourth electrical contact element;
determining whether or not the first interconnect-under-test suffers from manufacturing defects from the first and second test results; and
determining whether or not the second interconnect-under-test suffers from manufacturing defects from the first and second test results,wherein the first electrical contact element and the third electrical contact element are formed at a first major surface on the same side of the semiconductor die.
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Accused Products
Abstract
The present invention relates generally to testing of interconnects in a semiconductor die, and more particularly to testing of semiconductor chips that are three-dimensionally stacked via an interposer. In one aspect, a method for testing an interconnect in a semiconductor die comprises providing the semiconductor die, which includes a plurality of electrical contact elements formed at one or more surfaces of the semiconductor die, at least one interconnect-under-test disposed between a first electrical contact element and a second electrical contact element, and an electrical component electrically coupled between the interconnect-under-test and at least one third electrical contact element.
21 Citations
18 Claims
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1. A method of testing an interconnect in a semiconductor die, comprising:
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providing the semiconductor die, wherein the semiconductor die comprises; a first interconnect-under-test arranged between a first electrical contact element and a second electrical contact element, and a second interconnect-under-test arranged between a third electrical contact element and a fourth electrical contact element, wherein the second interconnect-under-test is connected to the first interconnect-under test via an electrical component; testing a first signal path in the semiconductor die for manufacturing defects, the first signal path comprising a first part of the first interconnect-under-test and a first deviation path from the first interconnect-under-test through the electrical component to the third electrical contact element, thus obtaining first test results, wherein testing the first signal path comprises probing the first electrical contact element and the third electrical contact element; testing a second signal path in the semiconductor die for manufacturing defects, the second signal path comprising a second part of the first interconnect-under-test and a second deviation path from the first interconnect-under-test through the electrical component to the fourth electrical contact element, thus obtaining second test results, wherein testing the second signal path comprises probing the second electrical contact element and the fourth electrical contact element; determining whether or not the first interconnect-under-test suffers from manufacturing defects from the first and second test results; and determining whether or not the second interconnect-under-test suffers from manufacturing defects from the first and second test results, wherein the first electrical contact element and the third electrical contact element are formed at a first major surface on the same side of the semiconductor die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor die adapted to be tested for manufacturing defects, the semiconductor die comprising:
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a surface having a plurality of electrical contact elements; a first interconnect-under-test between a first electrical contact element and a second electrical contact element; a second interconnect-under-test between a third electrical contact element and a fourth electrical contact element, wherein the second interconnect-under-test is connected to the first interconnect-under test via an electrical component; a first signal path in the semiconductor die configured for testing for manufacturing defects by obtaining first test results, the first signal path comprising a first part of the first interconnect-under-test and a first deviation path from the first interconnect-under-test through the electrical component to the third electrical contact element, wherein the first signal path is configured to be tested by probing the first electrical contact element and the third electrical contact element; second signal path in the semiconductor die configured for testing for manufacturing defects by obtaining second test results, the second signal path comprising a second part of the first interconnect-under-test and a second deviation path from the first interconnect-under-test through the electrical component to the fourth electrical contact element, wherein the second signal path is configured to be tested by probing the second electrical contact element and the fourth electrical contact element; wherein at least three of the first electrical contact element, the second electrical contact element, the third electrical contact element and the fourth electrical contact element are formed at a first major surface on the same side of the semiconductor die. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification