Electroentropic memory device
First Claim
1. A memory device, comprising:
- an array of electroentropic storage devices (EESDs), each EESD comprising a dielectric material having a relative permittivity greater than 3.9, wherein each EESD is a storage element in the memory device;
a plurality of address lines arranged in rows to select a row of the EESDs; and
a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD.
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Accused Products
Abstract
Embodiments of an electroentropic memory device comprising an array of electroentropic storage devices (EESDs) are disclosed, as well as methods of making and using the electroentropic memory device. The memory device includes a plurality of address lines arranged in rows to select a row of the EESDs and a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD. The memory device may have a stacked architecture with multiple layers of address lines, data lines, and EESDs. The disclosed electroentropic memory devices are operable in ROM and RAM modes. EESDs in the disclosed electroentropic memory devices may include from 2-4096 logic states and/or have a density from 0.001 kb/cm3 to 1024 TB/cm3.
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Citations
20 Claims
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1. A memory device, comprising:
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an array of electroentropic storage devices (EESDs), each EESD comprising a dielectric material having a relative permittivity greater than 3.9, wherein each EESD is a storage element in the memory device; a plurality of address lines arranged in rows to select a row of the EESDs; and a plurality of data lines arranged in columns to select a column of the EESDs, wherein each EESD is coupled in series between an address line connected to one side of the EESD and a data line connected to an opposing side of the EESD. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of refreshing a memory device, comprising:
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providing an array of entropic energy storage devices (EESDs), wherein each EESD is a storage element in the memory device; charging an EESD in the array to a voltage V1, wherein the voltage V1 discharges, at least in part, due to leakage over time; subsequently determining a capacitance C of the EESD; determining, based on the capacitance C, the voltage V1, wherein the capacitance C is correlated to the voltage V1 and the capacitance C remains substantially unchanged as the voltage V1 discharges due to leakage; and recharging the EESD to the voltage V1. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification