Method for removing hydrogen from oxide semiconductor layer having insulating layer containing halogen element formed thereover
First Claim
1. A method of manufacturing a semiconductor device comprising the steps of:
- forming a first oxide insulating layer over a gate electrode;
forming an oxide semiconductor layer over the first oxide insulating layer, wherein the oxide semiconductor layer overlaps with the gate electrode;
performing plasma treatment on the oxide semiconductor layer under an atmosphere of a gas containing a halogen element;
forming a second oxide insulating layer over the oxide semiconductor layer, the second oxide insulating layer containing silicon, oxygen, and the halogen element;
forming a source electrode and a drain electrode over the second oxide insulating layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; and
heating the oxide semiconductor layer.
0 Assignments
0 Petitions
Accused Products
Abstract
An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.
-
Citations
20 Claims
-
1. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a first oxide insulating layer over a gate electrode; forming an oxide semiconductor layer over the first oxide insulating layer, wherein the oxide semiconductor layer overlaps with the gate electrode; performing plasma treatment on the oxide semiconductor layer under an atmosphere of a gas containing a halogen element; forming a second oxide insulating layer over the oxide semiconductor layer, the second oxide insulating layer containing silicon, oxygen, and the halogen element; forming a source electrode and a drain electrode over the second oxide insulating layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; and heating the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method of manufacturing a semiconductor device comprising the steps of:
-
forming a first oxide insulating layer over a gate electrode; forming an oxide semiconductor layer over the first oxide insulating layer, wherein the oxide semiconductor layer overlaps with the gate electrode; performing plasma treatment on the oxide semiconductor layer under an atmosphere of a gas containing fluorine; forming a second oxide insulating layer over the oxide semiconductor layer; forming a source electrode and a drain electrode over the second oxide insulating layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; forming a silicon nitride layer over the source electrode and the drain electrode; and heating the oxide semiconductor layer at a temperature of 100°
C. or higher after forming the second oxide insulating layer,wherein the second oxide insulating layer contains silicon, oxygen, and fluorine. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A method of manufacturing a semiconductor device comprising the steps of:
-
forming an oxide semiconductor layer over a substrate; performing plasma treatment on the oxide semiconductor layer under an atmosphere of a gas containing fluorine; forming an oxide insulating layer containing silicon and oxygen on the oxide semiconductor layer; adding fluorine to the oxide insulating layer; forming a source electrode and a drain electrode over the oxide insulating layer, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; and performing a heat treatment after the step of adding fluorine at a temperature of 100°
C. or higher. - View Dependent Claims (17, 18, 19, 20)
-
Specification