Semiconductor device having switchable regions with different transconductances
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate comprising an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells and the outer rim, wherein each of the switchable cells comprises a gate electrode structure; and
a gate metallization in contact with the gate electrode structure,wherein the active area comprises at least a first switchable region having a first specific transconductance and at least a second switchable region having a second specific transconductance which is different from the first specific transconductance,wherein the second switchable region is arranged between the gate metallization and the first switchable region,wherein a ratio of the area of the second switchable region to the total area of the switchable regions is in a range from 5% to 50%.
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Abstract
A semiconductor device includes a semiconductor substrate having an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells and the outer rim. Each of the switchable cells includes a gate electrode structure. The semiconductor device further includes a gate metallization in contact with the gate electrode structure. The active area includes at least a first switchable region having a first specific transconductance and at least a second switchable region having a second specific transconductance which is different from the first specific transconductance. The second switchable region is arranged between the gate metallization and the first switchable region. A ratio of the area of the second switchable region to the total area of the switchable regions is in a range from 5% to 50%.
39 Citations
20 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate comprising an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells and the outer rim, wherein each of the switchable cells comprises a gate electrode structure; and a gate metallization in contact with the gate electrode structure, wherein the active area comprises at least a first switchable region having a first specific transconductance and at least a second switchable region having a second specific transconductance which is different from the first specific transconductance, wherein the second switchable region is arranged between the gate metallization and the first switchable region, wherein a ratio of the area of the second switchable region to the total area of the switchable regions is in a range from 5% to 50%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a semiconductor substrate comprising an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells and the outer rim, wherein each of the switchable cells comprises a gate electrode structure; and a gate metallization in contact with the gate electrode structures; wherein the active area comprises a first group of the switchable cells defining a first switchable region and a second group of the switchable cells defining a second switchable region, wherein the switchable cells of the first group have a first specific transconductance and wherein the switchable cells of the second group have a second specific transconductance which is different from the first specific transconductance, wherein the second switchable region is arranged between the gate metallization and the first switchable region, wherein a ratio of the area of the second switchable region to the total area of the switchable regions is in a range from 5% to 50%. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification