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Semiconductor device having switchable regions with different transconductances

  • US 9,679,895 B2
  • Filed: 03/08/2016
  • Issued: 06/13/2017
  • Est. Priority Date: 06/20/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate comprising an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells and the outer rim, wherein each of the switchable cells comprises a gate electrode structure; and

    a gate metallization in contact with the gate electrode structure,wherein the active area comprises at least a first switchable region having a first specific transconductance and at least a second switchable region having a second specific transconductance which is different from the first specific transconductance,wherein the second switchable region is arranged between the gate metallization and the first switchable region,wherein a ratio of the area of the second switchable region to the total area of the switchable regions is in a range from 5% to 50%.

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