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Trench MOSFET shield poly contact

  • US 9,680,003 B2
  • Filed: 03/27/2015
  • Issued: 06/13/2017
  • Est. Priority Date: 03/27/2015
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a plurality of vertical transistors at a semiconductor layer coupled together in parallel residing within an outer perimeter of a recessed region of a semiconductor layer, each vertical transistor comprising a mesa having a channel region and being spaced apart from corresponding adjacent mesas in a transverse direction by a first dimension, each corresponding mesa spaced apart from the outer perimeter in a lateral direction by approximately the first dimension;

    each adjacent mesa pair associated with a point that is equidistant from an end of each mesa of the adjacent mesa pair and from the outer perimeter in the lateral direction; and

    a plurality of inter-level conductive plugs connected to a shield terminal electrode and to a device shield within the recessed region, each point being associated with a corresponding mesa pair and located within a perimeter of a corresponding one of the plurality of conductive plugs.

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