Semiconductor device

• US 9,680,028 B2
• Filed: 07/09/2015
• Issued: 06/13/2017
• Est. Priority Date: 10/14/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Nonaka, Yusuke, Tsubuku, Masashi, Shimazu, Takashi, Honda, Tatsuya
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US14/795,592
• Publication Number:
  US 20150311348A1
• Time in Patent Office: 705 Days
• Field of Search: 257 43, 257 59, 257 72, 257291
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

Claims

1. A semiconductor device comprising:

an oxide semiconductor film over a substrate;

an insulating film over the oxide semiconductor film, wherein the insulating film comprises an oxide containing silicon; and

a gate electrode over the insulating film,

wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. %, and

wherein the region is located at an interface between the oxide semiconductor film and the insulating film and in contact with the insulating film.

2. The semiconductor device according to claim 1, wherein an end portion of the oxide semiconductor film is tapered at an angle of 20°

to 50°

.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor film comprises a crystal portion.

4. The semiconductor device according to claim 3, further comprising a base insulating film between the substrate and the oxide semiconductor film,

wherein in the crystal portion, a c-axis is aligned in a direction perpendicular to an interface between the base insulating film and the oxide semiconductor film.

5. The semiconductor device according to claim 1, wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.

6. The semiconductor device according to claim 1, wherein a concentration of carbon in the region is lower than or equal to 1.0×

10²⁰ atoms/cm³.

7. The semiconductor device according to claim 1, wherein the region has a thickness less than or equal to 5 nm.

8. The semiconductor device according to claim 1, further comprising a source electrode and a drain electrode being in contact with the oxide semiconductor film.

9. A semiconductor device comprising:

a first transistor comprising;

a channel formation region comprising silicon;

a gate insulating film over the channel formation region; and

a first gate electrode; and

a second transistor over the first transistor, the second transistor comprising;

an oxide semiconductor film;

an insulating film over the oxide semiconductor film, wherein the insulating film comprises an oxide containing silicon; and

a second gate electrode over the insulating film,

wherein the oxide semiconductor film comprises a region in which a concentration of silicon is lower than or equal to 1.0 at. %, and

wherein the region is located at an interface between the oxide semiconductor film and the insulating film and in contact with the insulating film.

10. The semiconductor device according to claim 9, wherein an end portion of the oxide semiconductor film is tapered at an angle of 20°

to 50°

.

11. The semiconductor device according to claim 9, wherein the oxide semiconductor film comprises a crystal portion.

12. The semiconductor device according to claim 9, wherein the concentration of silicon in the region is lower than or equal to 0.1 at. %.

13. The semiconductor device according to claim 9, wherein a concentration of carbon in the region is lower than or equal to 1.0×

10²⁰ atoms/cm³.

14. The semiconductor device according to claim 9, wherein the region has a thickness less than or equal to 5 nm.

15. The semiconductor device according to claim 9, wherein the second transistor further comprises a source electrode and a drain electrode being in contact with the oxide semiconductor film.