Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device

• US 9,680,064 B2
• Filed: 07/21/2014
• Issued: 06/13/2017
• Est. Priority Date: 07/21/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Sin, Han, Park, Jun Suk, Kim, Deung Kwan
• Primary Examiner(s): Li, Meiya
• Application Number:
  US14/336,985
• Publication Number:
  US 20140327032A1
• Time in Patent Office: 1,058 Days
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/54 having a particular shape

Abstract

Disclosed are a light emitting device, a conductive substrate; a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion; a protective layer on the peripheral portion of the second electrode layer; and a light emitting structure including a second conductive semiconductor layer on the second electrode layer, an active layer on the second conductive semiconductor layer and a first conductive semiconductor layer on the active layer; and a first electrode layer on the first conductive semiconductor layer, wherein the second conductive semiconductor layer includes edge portions extending outside of the light emitting structure.

Claims

1. A light emitting device comprising:

a conductive substrate;

a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion;

a protective layer on the peripheral portion of the second electrode layer;

a light emitting structure including a second conductive type semiconductor layer on the second electrode layer, an active layer on the second conductive type semiconductor layer and a first conductive type semiconductor layer on the active layer; and

a first electrode layer on the first conductive type semiconductor layer,

wherein the second conductive type semiconductor layer includes first edge portions in contact with a bottom surface of the active layer, and second edge portions extended to opposite outsides of the first edge portions,

wherein a material of the protective layer is different from that of the second electrode layer, and

wherein one of outer side-surfaces of the second edge portions is vertically aligned with one of outer side-surfaces of the protective layer.

2. The light emitting device according to claim 1, wherein a bottom surface of the second conductive type semiconductor layer contacts the second electrode layer.

3. The light emitting device according to claim 1, wherein a lateral width of the protection layer is substantially the same with a lateral width of the peripheral portion of the second electrode layer.

4. The light emitting device according to claim 1, wherein the protective layer surrounds the center portion of the second electrode layer.

5. The light emitting device according to claim 1, wherein the second electrode layer includes at least one of Ag, Ni, Al, Pt, or Au.

6. The light emitting device according to claim 1, wherein a lateral width of the center portion of the second electrode layer is greater than a lateral width of the peripheral portion of the second electrode layer.

7. The light emitting device according to claim 1, wherein the protection layer is directly in contact with the second conductive type semiconductor layer.

8. The light emitting device according to claim 1, wherein a lateral width of the second conductive type semiconductor layer is greater than a lateral width of the first conductive type semiconductor layer.

16. The light emitting device according to claim 1, wherein the second conductive type semiconductor layer comprises at least two grooves, each groove being provided on different peripheral portions of the second conductive type semiconductor layer.

17. The light emitting device according to claim 1, wherein the second electrode layer comprises a reflective electrode layer, the center portion of the second electrode layer being a convex center portion on the conductive substrate, and

wherein the reflective electrode layer is in contact with a bottom surface of the second conductive type semiconductor layer and a bottom surface of the protective layer.

18. The light emitting device according to claim 17, wherein the peripheral portion of the reflective electrode layer is vertically overlapped with both the second edge portions of the second conductive type semiconductor layer and the protective layer.

19. The light emitting device according to claim 1, wherein the center portion of the second electrode layer protrudes upward relative to the peripheral potion of the second electrode layer, and

wherein a bottom surface of the center portion of the second electrode layer is flush with a bottom surface of the peripheral potion of the second electrode layer.

9. A light emitting device comprising:

a conductive substrate;

a second electrode layer on the conductive substrate and including a center portion and a peripheral portion surrounding the center portion;

a protective layer on the peripheral portion of the second electrode layer;

a light emitting structure including a second conductive type semiconductor layer on the second electrode layer, an active layer on the second conductive type semiconductor layer and a first conductive type semiconductor layer on the active layer; and

a first electrode layer on the first conductive type semiconductor layer,

wherein the center portion has a thickness different from that of the peripheral portion,

wherein the second conductive type semiconductor layer includes first edge portions in contact with a bottom surface of the active layer, and second edge portions extended to corresponding outsides of the first edge portions,

wherein a material of the protective layer is different from that of the second electrode layer, and

wherein a thickness of each of the second edge portions is less than that of the protective layer.

10. The light emitting device according to claim 9, wherein a lateral width of the center portion of the second electrode layer is greater than a lateral width of the peripheral portion of the second electrode layer.

11. The light emitting device according to claim 9, wherein a bottom surface of the second conductive type semiconductor layer contacts the second electrode layer.

12. The light emitting device according to claim 9, wherein a lateral width of the protection layer is substantially same with a lateral width of the peripheral portion of the second electrode layer.

13. The light emitting device according to claim 9, wherein a lateral width of the second conductive type semiconductor layer is greater than a lateral width of the first conductive type semiconductor layer.

14. The light emitting device according to claim 9, wherein the protective layer surrounds the center portion of the second electrode layer.

15. The light emitting device according to claim 9, wherein the second electrode layer includes at least one of Ag, Ni, Al, Pt, or Au.

20. The light emitting device according to claim 9, wherein the thickness of each of the second edge portions is less than that of each of the first edge portions.