Module with integrated power electronic circuitry and logic circuitry

• US 9,681,558 B2
• Filed: 08/12/2014
• Issued: 06/13/2017
• Est. Priority Date: 08/12/2014
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Chen, Liu, Dinkel, Markus, Salminen, Toni
• Primary Examiner(s): Smith, Courtney
• Assistant Examiner(s): Shrestha, Sagar
• Application Number:
  US14/457,663
• Publication Number:
  US 20160050768A1
• Time in Patent Office: 1,036 Days
• Field of Search: 36167901, 36167902, 361728, 361729, 361736, 361746, 361749, 361766, 361761, 361762, 361785, 361792, 361803, 174254, 257777, 257778
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/2518 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H05K 2201/10166 Transistor
• CPC Class Codes: H05K 3/0017 Etching of the substrate by chemical or physical means
• CPC Class Codes: H05K 3/40 Forming printed elements for providing electric connections to or between printed circuits
• CPC Class Codes: H05K 3/4697 having cavities, e.g. for mounting components H05K3/4691 takes precedence
• CPC Class Codes: H05K 7/06 on insulating boards , e.g. wiring harnesses for printed circuits H05K1/18, H05K3/30

Abstract

A integrated power module with integrated power electronic circuitry and logic circuitry includes an embedded power semiconductor module including one or more power semiconductor dies embedded in a dielectric material, a multi-layer logic printed circuit board with one or more logic dies mounted to a surface of the logic printed circuit board, and a flexible connection integrally formed between the embedded power semiconductor module and the logic printed circuit board. The flexible connection mechanically connects the embedded power semiconductor module to the logic printed circuit board and provides an electrical pathway between the embedded power semiconductor module and the logic printed circuit board. A method of manufacturing the integrated power module is also provided.

Claims

1. An integrated power module with integrated power electronic circuitry and logic circuitry, comprising:

a first lamination substrate comprising a dielectric material laminated with a metal foil;

an embedded power semiconductor module on the first lamination substrate and including one or more power semiconductor dies embedded in a dielectric material;

a multi-layer logic printed circuit board (PCB) core on the first lamination substrate and spaced apart from the embedded power semiconductor module;

a second lamination substrate comprising a dielectric material laminated with a metal foil, the second lamination substrate covering the embedded power semiconductor module and the multi-layer logic PCB core;

a recess formed in a dielectric-filled gap between the power semiconductor module and the multi-layer logic PCB core, the recess extending through the second lamination substrate and the dielectric-filled gap to or into the first lamination substrate; and

a flexible connection integrally formed between the embedded power semiconductor module and the multi-layer logic PCB core, the flexible connection mechanically connecting the embedded power semiconductor module to the multi-layer logic PCB core and providing an electrical pathway between the embedded power semiconductor module and the multi-layer logic PCB core, the flexible connection formed from a region of the first lamination substrate exposed by the recess.

2. The integrated power module of claim 1, wherein the flexible connection is bent such that the multi-layer logic PCB core lies in a different plane than the embedded power semiconductor module.

3. The integrated power module of claim 2, wherein the flexible connection is bent such that the multi-layer logic PCB core lies in a plane that is perpendicular to the plane in which the embedded power semiconductor module lies.

4. The integrated power module of claim 1, wherein the flexible connection is bent such that the multi-layer logic PCB core is positioned over or under the embedded power semiconductor module.

5. The integrated power module of claim 1, wherein the electrical pathway provided by the integral flexible connection is formed by the metal foil of the first lamination substrate.

6. The integrated power module of claim 1, further comprising one or more logic dies mounted to a surface of the metal foil of the second lamination substrate over the multi-layer logic PCB core.

7. The integrated power module of claim 6, wherein the flexible connection is bent such that the one or more logic dies face toward the embedded power semiconductor module.

8. A power module, comprising:

a first metal foil;

a first dielectric material laminated on the first metal foil;

an embedded power semiconductor module on the first dielectric material and including one or more power semiconductor dies;

a multi-layer logic printed circuit board (PCB) core on the first dielectric material and spaced apart from the embedded power semiconductor module;

a second dielectric material covering the embedded power semiconductor module and the multi-layer logic PCB core;

a second metal foil over the second dielectric material, the second dielectric material being laminated on the second metal foil; and

a recess formed in a dielectric-filled gap between the power semiconductor module and the multi-layer logic PCB core, the recess extending through the second metal foil, the second dielectric material and the dielectric-filled gap to or into the first dielectric material so as to expose a region of the first dielectric material,

wherein the region of the first dielectric material exposed by the recess and a region of the first metal foil covered by the exposed region of the first dielectric material form a flexible electrical connection between the embedded power semiconductor module and the multi-layer logic PCB core.

9. The power module of claim 8, wherein the flexible electrical connection is bent such that the multi-layer logic PCB core lies in a different plane than the embedded power semiconductor module.

10. The power module of claim 9, wherein the flexible electrical connection is bent such that the multi-layer logic PCB core lies in a plane that is perpendicular to the plane in which the embedded power semiconductor module lies.

11. The power module of claim 8, wherein the flexible electrical connection is bent such that the multi-layer logic PCB core is positioned over or under the embedded power semiconductor module.

12. The power module of claim 8, further comprising one or more logic dies mounted to a surface of the second metal foil over the multi-layer logic PCB core.

13. The power module of claim 12, wherein the flexible electrical connection is bent such that the one or more logic dies face toward the embedded power semiconductor module.