Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
First Claim
1. A system for monitoring a plasma processing chamber, the system comprising:
- a power supply configured to provide a periodic voltage function to an output that is configured to couple to the plasma processing chamber, the periodic voltage function having pulses and a portion between the pulses;
an ion current compensation component configured to provide ion current compensation, Ic, to the output to modify a slope, dV0/dt, of the portion between the pulses to form a modified periodic voltage function;
a memory to store an effective capacitance value, C1, of at least a substrate support of the plasma processing chamber; and
a controller in communication with the power supply, the ion current compensation component, a non-transitory tangible computer readable medium, and the memory, wherein the non-transitory tangible computer readable medium is encoded with instructions, and wherein the controller is configured to execute the instructions, the instructions comprising;
determining the slope, dV0/dt, of the portion between the pulses of the modified periodic voltage function;
adjusting a magnitude of the ion current compensation, IC, until
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Accused Products
Abstract
Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.
151 Citations
19 Claims
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1. A system for monitoring a plasma processing chamber, the system comprising:
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a power supply configured to provide a periodic voltage function to an output that is configured to couple to the plasma processing chamber, the periodic voltage function having pulses and a portion between the pulses; an ion current compensation component configured to provide ion current compensation, Ic, to the output to modify a slope, dV0/dt, of the portion between the pulses to form a modified periodic voltage function; a memory to store an effective capacitance value, C1, of at least a substrate support of the plasma processing chamber; and a controller in communication with the power supply, the ion current compensation component, a non-transitory tangible computer readable medium, and the memory, wherein the non-transitory tangible computer readable medium is encoded with instructions, and wherein the controller is configured to execute the instructions, the instructions comprising; determining the slope, dV0/dt, of the portion between the pulses of the modified periodic voltage function; adjusting a magnitude of the ion current compensation, IC, until - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 19)
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2. A system for monitoring a plasma processing chamber, the system comprising:
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a power supply configured to provide a periodic voltage function to an output that is configured to couple to the plasma processing chamber, the periodic voltage function having pulses and a portion between the pulses; an ion current compensation component configured to provide ion current compensation, IC, to the output to modify a slope of the portion between the pulses to form a modified periodic voltage function, the ion current compensation component including; a controllable DC current source, controlling for current, that is consistently coupled to the output; and a current controller encoded to maintain a constant rate of change of a voltage of the portion between the pulses by; determining a slope, dV0/dt, of the portion between the pulses of the modified periodic voltage function; controlling the controllable DC current source to adjust a magnitude of the ion current compensation, IC, until - View Dependent Claims (11, 12, 13, 14, 15)
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3. A system for monitoring a plasma processing chamber, the system comprising:
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a DC power supply that provides a DC voltage that is fixed at a magnitude responsive to an ion-energy setting, wherein the ion-energy setting is indicative of a monoenergetic distribution of ion energy at the surface of a substrate within the plasma processing chamber; an output disposed to couple to a substrate support; two switching components including a first switching component coupled to the DC power supply and a second switching component couple to a ground terminal, the two switching components configured to generate a periodic voltage function at the output by alternately coupling the DC voltage and the ground terminal to the output, the periodic voltage function having pulses and a portion between the pulses; and an ion current compensation component coupled to the output, the ion current compensation component including; a controllable DC current source, separate from the DC power supply, that is consistently coupled to the output; and a current controller configured to monitor a rate of change of a voltage of the portion between the pulses and maintain an uninterrupted ion current compensation current, IC, which is fixed in magnitude, to maintain a fixed rate of change of the voltage; and a controller configured to monitor changes of Ic over time to monitor a condition of the processing chamber. - View Dependent Claims (16, 17, 18)
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Specification