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Method of forming Cu pillar bump with non-metal sidewall spacer and metal top cap

  • US 9,685,372 B2
  • Filed: 04/23/2015
  • Issued: 06/20/2017
  • Est. Priority Date: 06/02/2010
  • Status: Active Grant
First Claim
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1. A method of forming an integrated circuit device, the method comprising:

  • forming a conductive element over a substrate, wherein the conductive element is over an under bump metallurgy (UBM) layer, and the UBM layer comprises a first UBM layer and a second UBM layer over the first UBM layer;

    etching the second UBM layer to expose a portion of the first UBM layer beyond a periphery of the conductive element;

    forming a protection layer over sidewalls of the conductive element, over sidewalls of the second UBM layer and directly contacting a top surface of the first UBM layer;

    etching the first UBM layer to remove a portion of the first UBM layer, wherein etching first UBM layer comprises removing the protection layer from an upper portion of the sidewalls of the conductive element; and

    forming a cap layer over a top surface of the conductive element.

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