Semiconductor device comprising transistor including oxide semiconductor
First Claim
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1. A semiconductor device comprising:
- a first wiring, a second wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring,wherein one of the plurality of storage elements includes;
a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and
a second transistor having a second gate electrode, a second source electrode, and a second drain electrode,wherein the first transistor includes a first channel region provided in a substrate including a semiconductor material,wherein the second transistor includes an oxide semiconductor layer including a second channel region,wherein the first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other,wherein the first wiring and the first source electrode are electrically connected to each other, andwherein the second wiring and the first drain electrode are electrically connected to each other.
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Abstract
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
197 Citations
18 Claims
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1. A semiconductor device comprising:
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a first wiring, a second wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring, wherein one of the plurality of storage elements includes; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode, wherein the first transistor includes a first channel region provided in a substrate including a semiconductor material, wherein the second transistor includes an oxide semiconductor layer including a second channel region, wherein the first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other, wherein the first wiring and the first source electrode are electrically connected to each other, and wherein the second wiring and the first drain electrode are electrically connected to each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first wiring, a second wiring, a third wiring, and a fourth wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring, wherein one of the plurality of storage elements includes; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode, wherein the first transistor includes a first channel region provided in a substrate including a semiconductor material, wherein the second transistor includes an oxide semiconductor layer including a second channel region, wherein the first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other, wherein the first wiring and the first source electrode are electrically connected to each other, wherein the second wiring and the first drain electrode are electrically connected to each other, wherein the third wiring and the other of the second source electrode and the second drain electrode are electrically connected to each other, and wherein the fourth wiring and the second gate electrode are electrically connected to each other. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification