Circuit system
First Claim
1. A semiconductor device comprising:
- a capacitor; and
a transistor electrically connected to the capacitor,wherein electrostatic capacitance of the capacitor is larger than or equal to 0.1 fF and less than 10 fF,wherein the transistor comprises an oxide semiconductor film, andwherein writing time of the semiconductor device is longer than or equal to 0.1 nsec and shorter than 5 nsec in operation at room temperature.
1 Assignment
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Accused Products
Abstract
A semiconductor device with a transistor having favorable electrical characteristics is provided. The semiconductor device has a memory circuit and a circuit that are over the same substrate. The memory circuit includes a capacitor, a first transistor, and a second transistor. A gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor. The circuit includes a third transistor and a fourth transistor that are electrically connected to each other in series. The first transistor and the third transistor each include an active layer including silicon, and the second transistor and the fourth transistor each include an active layer including an oxide semiconductor.
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Citations
21 Claims
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1. A semiconductor device comprising:
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a capacitor; and a transistor electrically connected to the capacitor, wherein electrostatic capacitance of the capacitor is larger than or equal to 0.1 fF and less than 10 fF, wherein the transistor comprises an oxide semiconductor film, and wherein writing time of the semiconductor device is longer than or equal to 0.1 nsec and shorter than 5 nsec in operation at room temperature. - View Dependent Claims (2)
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3. A semiconductor device comprising:
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a memory circuit over a substrate, the memory circuit comprising a capacitor, a first transistor, and a second transistor; and a circuit over the substrate, the circuit comprising a third transistor and a fourth transistor, wherein a gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor, wherein the third transistor and the fourth transistor are electrically connected to each other in series, wherein the first transistor and the third transistor each comprise an active layer comprising silicon, and wherein the second transistor and the fourth transistor each comprise an active layer of an oxide semiconductor film. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a memory circuit over a substrate, the memory circuit comprising a capacitor, a first transistor, and a second transistor; and a circuit over the substrate, the circuit comprising a third transistor and a fourth transistor, wherein a gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor, wherein the third transistor and the fourth transistor are electrically connected to each other in series, and wherein the first transistor, the second transistor, the third transistor, and the fourth transistor each comprise an active layer of an oxide semiconductor film. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification