Semiconductor device, power diode, and rectifier

• US 9,685,562 B2
• Filed: 04/19/2016
• Issued: 06/20/2017
• Est. Priority Date: 09/13/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Godo, Hiromichi, Kobayashi, Satoshi
• Primary Examiner(s): Abdelaziez, Yasser A
• Application Number:
  US15/132,297
• Publication Number:
  US 20160233341A1
• Time in Patent Office: 427 Days
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

Claims

1. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first layer comprising indium and zinc over and in contact with the oxide semiconductor layer;

a second layer comprising indium and zinc over and in contact with the oxide semiconductor layer;

a third layer over and in contact with the first layer;

a fourth layer over and in contact with the second layer; and

an insulating layer over the third layer and the fourth layer,

wherein an end portion of the first layer protrudes from an end portion of the third layer in a channel length direction, and

wherein an end portion of the second layer protrudes from an end portion of the fourth layer in the channel length direction.

2. The semiconductor device according to claim 1,

wherein the third layer is capable of using a source electrode, and

wherein the fourth layer is capable of using a drain electrode.

3. The semiconductor device according to claim 1, wherein a distance between the end portion of the first layer and the end portion of the second layer is shorter than a distance between the end portion of the third layer and the end portion of the fourth layer in the channel length direction.

4. The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

5. The semiconductor device according to claim 1, wherein the insulating layer is in contact with the oxide semiconductor layer, the first layer, the second layer, the third layer, and the fourth layer.

6. The semiconductor device according to claim 1, wherein a concentration of alkali metal element in the oxide semiconductor layer is less than or equal to 2×

10¹⁶ cm<sup>−

3</sup>.

7. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first layer comprising indium and zinc over and in contact with the oxide semiconductor layer;

a second layer comprising indium and zinc over and in contact with the oxide semiconductor layer;

a third layer over and in contact with the first layer;

a fourth layer over and in contact with the second layer; and

an insulating layer over the third layer and the fourth layer,

wherein an end portion of the first layer protrudes from an end portion of the third layer in a channel length direction,

wherein an end portion of the second layer protrudes from an end portion of the fourth layer in the channel length direction, and

wherein at least one end portion of the oxide semiconductor layer is covered with the first layer or the second layer in the channel length direction.

8. The semiconductor device according to claim 7,

wherein the third layer is capable of using a source electrode, and

wherein the fourth layer is capable of using a drain electrode.

9. The semiconductor device according to claim 7, wherein a distance between the end portion of the first layer and the end portion of the second layer is shorter than a distance between the end portion of the third layer and the end portion of the fourth layer in the channel length direction.

10. The semiconductor device according to claim 7, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

11. The semiconductor device according to claim 7, wherein the insulating layer is in contact with the oxide semiconductor layer, the first layer, the second layer, the third layer, and the fourth layer.

12. The semiconductor device according to claim 7, wherein a concentration of alkali metal element in the oxide semiconductor layer is less than or equal to 2×

10¹⁶ cm<sup>−

3</sup>.

13. A semiconductor device comprising:

a gate electrode;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first layer comprising indium and zinc over and in contact with the oxide semiconductor layer;

a second layer comprising indium and zinc over and in contact with the oxide semiconductor layer;

a third layer over and in contact with the first layer;

a fourth layer over and in contact with the second layer; and

an insulating layer over the third layer and the fourth layer,

wherein an end portion of the first layer protrudes from an end portion of the third layer in a channel length direction,

wherein an end portion of the second layer protrudes from an end portion of the fourth layer in the channel length direction, and

wherein the gate electrode comprises titanium.

14. The semiconductor device according to claim 13,

wherein the third layer is capable of using a source electrode, and

wherein the fourth layer is capable of using a drain electrode.

15. The semiconductor device according to claim 13, wherein a distance between the end portion of the first layer and the end portion of the second layer is shorter than a distance between the end portion of the third layer and the end portion of the fourth layer in the channel length direction.

16. The semiconductor device according to claim 13, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

17. The semiconductor device according to claim 13, wherein the insulating layer is in contact with the oxide semiconductor layer, the first layer, the second layer, the third layer, and the fourth layer.

18. The semiconductor device according to claim 13, wherein a concentration of alkali metal element in the oxide semiconductor layer is less than or equal to 2×

10¹⁶ cm<sup>−

3</sup>.