Micro-electro-mechanical device having two buried cavities and manufacturing process thereof

• US 9,688,531 B2
• Filed: 06/23/2016
• Issued: 06/27/2017
• Est. Priority Date: 11/19/2015
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Villa, Flavio Francesco, Baldo, Lorenzo, Duqi, Enri
• Primary Examiner(s): Gebreyesus, Yosef
• Application Number:
  US15/191,160
• Publication Number:
  US 20170144881A1
• Time in Patent Office: 369 Days
• CPC Class Codes: B81B 2201/0228 Inertial sensors
• CPC Class Codes: B81B 2201/025 Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 2203/0163 Spring holders
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81B 7/0045 for reducing stress inside of the package structure
• CPC Class Codes: B81C 1/00182 Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
• CPC Class Codes: B81C 1/00325 for reducing stress inside of the package structure
• CPC Class Codes: B81C 2201/0116 Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
• CPC Class Codes: B81C 2201/0173 Thermo-migration of impurities from a solid, e.g. from a doped deposited layer
• CPC Class Codes: B81C 2203/0785 Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
• CPC Class Codes: G02B 26/0858 the reflecting means being moved or deformed by piezoelectric means

Abstract

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

Claims

1. A micro-electro-mechanical device, comprising:

a monolithic body of semiconductor material having a first face and a second face;

a first buried cavity in the monolithic body of semiconductor material;

a sensitive region in the monolithic body facing the first buried cavity;

a movable element over a second cavity that faces the first buried cavity; and

a decoupling trench extending from the first face of the monolithic body as far as the first buried cavity, the decoupling trench separating the sensitive region from a peripheral portion of the monolithic body.

2. The device according to claim 1, wherein the second cavity is buried in the sensitive region, wherein the movable element is a membrane in the sensitive region and arranged between the second cavity and the first face.

3. The device according to claim 2, wherein the membrane accommodates electronic components.

4. The device according to claim 1, wherein the movable element and the second cavity are spaced apart from the first face of the monolithic body, the movable element supported by a structural element that is coupled to the first face of the monolithic body.

5. The device according to claim 4, wherein the movable element is part of a MEMS inertial sensor.

6. The device according to claim 1, wherein the decoupling trench has a spiral shape delimiting the sensitive region and an arm, the sensitive region and the arm being suspended over the first buried cavity, the arm supporting the sensitive region and coupling the sensitive region to the peripheral region of the monolithic body.

7. The device according to claim 1, further comprising a cap element bonded to the monolithic body and facing the first face of the monolithic body.

8. The device according to claim 7, wherein the cap element is an ASIC.

9. The device according to claim 1, wherein the device forms a pressure sensor, wherein the monolithic body includes a base region extending between the first buried cavity and the second face of the monolithic body and a through hole traversing the base region.

10. A process for manufacturing a micro-electro-mechanical device, the process comprising:

forming a first buried cavity in a monolithic body of semiconductor material, wherein forming the first buried cavity forms a sensitive region facing the first buried cavity;

forming a second buried cavity in the sensitive region of the monolithic body; and

forming a decoupling trench extending from a first face of the monolithic body, the decoupling trench and the first buried cavity being in fluid communication with each other, the decoupling trench laterally surrounding the second buried cavity, the decoupling trench separating the sensitive region from a peripheral portion of the monolithic body.

11. The process according to claim 10, wherein after forming the first buried cavity, the process comprises increasing a thickness of the sensitive region over the first buried cavity.

12. The process according to claim 11, wherein increasing the thickness of the sensitive region comprises epitaxially growing an epitaxial layer, the epitaxial layer forming a part of the sensitive region.

13. The process according to claim 10, wherein forming the first buried cavity comprises:

forming a plurality of first trenches separated by first column structures in a substrate of semiconductor material;

epitaxially growing an epitaxial layer, wherein epitaxially growing comprises closing top portions of the first trenches; and

thermal annealing the epitaxial layer and the first column structures, thereby causing migration of semiconductor material atoms of the first column structures and forming the first buried cavity.

14. The process according to claim 11, wherein forming the second buried cavity comprises forming the second buried cavity within the sensitive region, the second buried cavity delimiting a membrane at a bottom within the sensitive region between the second buried cavity and the first face.

15. The process according to claim 13, wherein forming the second buried cavity comprises:

forming a plurality of second trenches separated by second column structures in the sensitive region;

epitaxially growing an epitaxial layer, wherein epitaxially growing comprises closing top portions of the second trenches; and

thermal annealing the epitaxial layer and the second column structures, thereby causing migration of semiconductor material atoms of the second column structures and forming the second buried cavity.

16. The process according to claim 11, wherein forming a second buried cavity comprises:

forming a sacrificial region above the sensitive region;

depositing a structural layer of semiconductor material above the sacrificial region;

forming openings in the structural layer; and

removing the sacrificial region through the openings.

17. The process according to claim 16, wherein forming openings comprises defining a suspended structure in the structural layer, the suspended structure being configured to move in response to a force applied thereto.

18. The process according to claim 10, further comprising fixing a cap element to the first face of the monolithic body.

19. An electronic apparatus comprising:

a microprocessor; and

a micro-electro-mechanical device, including;

a monolithic body of semiconductor material having a first face and a second face;

a first buried cavity in the monolithic body of semiconductor material;

a sensitive region in the monolithic body facing the first buried cavity;

a second cavity buried in the sensitive region;

a decoupling trench extending from the first face of the monolithic body as far as the first buried cavity and laterally surrounding the second buried cavity, the decoupling trench separating the sensitive region from a peripheral portion of the monolithic body; and

a cap coupled to the monolithic body.

20. The electronic device according to claim 19, wherein the electronic apparatus is at least one of a sphygmomanometer, a household apparatus, a mobile phone, a personal digital assistant, a notebook, and a pressure measuring apparatus.

21. The electronic device according to claim 19, wherein the cap is coupled to the first face of the monolithic body and integrates an application-specific integrated circuit.

22. The electronic device according to claim 19, wherein the cap is coupled to the second face of the monolithic body and integrates an application-specific integrated circuit.

23. The electronic device according to claim 22, wherein the monolithic body includes a through hole at the second face that places the first buried cavity in fluid communication with an environment that is external to the micro-electro-mechanical device.