Multi-channel backside wafer inspection

• US 9,689,804 B2
• Filed: 12/19/2014
• Issued: 06/27/2017
• Est. Priority Date: 12/23/2013
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Bobrov, Yakov
• Primary Examiner(s): Ton, Tri
• Assistant Examiner(s): Underwood, Jarreas C
• Application Number:
  US14/577,374
• Publication Number:
  US 20150233841A1
• Time in Patent Office: 921 Days
• Field of Search: 3562371-2416, 3562421-2438, 356426-431, 356600-640
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G01N 21/8806 Specially adapted optical and illumination features
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 2201/02 Mechanical
• CPC Class Codes: G01N 2201/06113 Coherent sources; lasers
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14

Abstract

A system for inspecting a backside surface of a wafer with multi-channel focus control includes a set of inspection sub-systems including a first inspection sub-system positioned and an additional inspection sub-system. The first and additional inspection sub-systems include an optical assembly, an actuation assembly, where the optical assembly is disposed on the actuation assembly, and a positional sensor configured to sense a position characteristic between a portion of the optical assembly and the backside surface of the wafer. The system also includes a controller configured to acquire one or more wafer profile maps of the backside surface of the wafer and adjust a first focus position of the first inspection sub-system or an additional focus position of the additional inspection sub-system based on the received one or more wafer profile maps.

Claims

1. A system inspecting a backside surface of a wafer with multi-channel focus control comprising:

a plurality of inspection sub-systems including a first inspection sub-system positionable at a first wafer position and at least an additional inspection sub-system positionable at an additional wafer position, wherein the wafer is secured at one or more edge portions of the wafer, wherein the backside surface of the wafer is distorted;

wherein the first inspection sub-system comprises;

a first optical assembly;

a first actuation assembly, wherein the first optical assembly is disposed on the first actuation assembly; and

a first positional sensor configured to sense a position characteristic between a portion of the first optical assembly and the backside surface of the wafer;

wherein the at least an additional inspection sub-system comprises;

at least an additional optical assembly;

at least an additional actuation assembly, wherein the at least an additional optical assembly is disposed on the at least an additional actuation assembly; and

at least an additional positional sensor configured to sense a position characteristic between a portion of the at least an additional optical assembly and the backside surface of the wafer; and

a controller, wherein the controller is communicatively coupled to the first actuation assembly, the at least an additional actuation assembly, the first positional sensor and the at least an additional positional sensor, wherein the controller is configured to execute a set of program instructions configured to cause one or more processors to;

acquire one or more wafer profile maps of the backside surface of the wafer; and

adjust at least one of a first focus position of the first inspection sub-system or at least an additional focus position of the at least an additional inspection sub-system based on the received one or more wafer profile maps to correct for focus error caused by the distortion of the backside surface of the wafer.

2. The system of claim 1, wherein the acquiring the one or more wafer profile maps comprises:

performing a pre-mapping process of the backside surface of the wafer in order to generate the one or more wafer profile maps.

3. The system of claim 2, wherein the acquiring the one or more wafer profile maps comprises:

performing a pre-mapping process of the backside surface of the wafer in order to generate the one or more wafer profile maps with at least one of the first positional sensor or the at least one additional positional sensor.

4. The system of claim 3, wherein the performing a pre-mapping process of the backside surface of the wafer in order to generate the one or more wafer profile maps with at least one of the first positional sensor or the at least one additional positional sensor comprises:

prior to a selected wafer inspection process, acquiring a plurality of position characteristic values across a plurality of positions of the backside surface of the wafer with at least one of the first positional sensor or the at least one additional positional sensor to scan the backside surface of the wafer; and

generating the one or more wafer profile maps with the acquired plurality of position characteristic values.

5. The system of claim 2, wherein the acquiring the one or more wafer profile maps comprises:

prior to a selected wafer inspection process, receiving one or more wafer profile maps of the backside surface of the wafer from a wafer shape measurement system.

6. The system of claim 5, wherein the wafer shape measurement system comprises:

at least one of an optical-based wafer shape measurement system, a proximity-based wafer shape measurement system, an inductance-based wafer shape measurement system or an air-pressure-based wafer shape measurement system.

7. The system of claim 1, wherein the adjusting at least one of a first focus position of the first inspection sub-system or at least an additional focus position of the at least an additional inspection sub-system based on the received one or more wafer profile maps comprises:

receiving one or more position characteristic measurements from at least one of the first positional sensor or the at least an additional positional sensor;

determining a first focus offset between the backside surface of the wafer and the portion of the first optical assembly by comparing the received one or more position characteristic measurement from the first positional sensor to the received one or more wafer profile maps;

determining an additional focus offset between the backside surface of the wafer and the portion of the at least an additional optical assembly by comparing the received one or more position characteristic measurement from the at least one additional positional sensor to the received one or more wafer profile maps;

directing the first actuation assembly to adjust the first focus position sufficient to correct the determined first focus offset; and

directing the at least an additional actuation assembly to adjust the at least an additional focus position sufficient to correct the determined additional focus offset.

8. The system of claim 1, wherein at least of the first optical assembly or the at least an additional optical assembly comprises:

an illumination source;

a set of illumination optics including at least an objective configured to focus illumination from the illumination source to a focal point;

a detector configured to detect illumination reflected or scattered from the wafer; and

a set of collection optics configured to collect illumination from the surface of the wafer and direct the collected illumination to the detector.

9. The system of claim 1, wherein at least one of the first actuation assembly or the at least an additional actuation assembly comprises:

an actuation stage;

an actuator mechanically coupled to the actuation stage and configured to selectively translate the actuation stage.

10. The system of claim 1, wherein the first position sensor and the at least an additional position sensor are located on the same side of the wafer.

11. The system of claim 1, wherein the first position sensor is located on a first side of the wafer and the at least an additional position sensor is located on a second side of the wafer opposite of the first side of the wafer.

12. The system of claim 1, wherein the wafer comprises:

a semiconductor wafer.

13. A system for inspecting a backside surface of a wafer with multi-channel focus control comprising:

a plurality of inspection sub-systems including a first inspection sub-system and at least an additional inspection sub-system, wherein the wafer is secured at one or more edge portions of the wafer, wherein the backside surface of the wafer is distorted,

wherein the first inspection sub-system comprises;

a first optical assembly; and

a first actuation assembly, wherein the first optical assembly is disposed on the first actuation assembly;

wherein the at least an additional inspection sub-system comprises;

at least an additional optical assembly; and

at least an additional actuation assembly, wherein the at least an additional optical assembly is disposed on the at least an additional actuation assembly;

a wafer shape measurement system configured to measure a position of at least a portion of the backside surface of the wafer; and

a controller, wherein the controller is communicatively coupled to the first actuation assembly, the at least an additional actuation assembly, the wafer shape measurement system, wherein the controller is configured to execute a set of program instructions configured to cause one or more processors to;

acquire wafer shape data from the wafer shape measurement system;

acquire the measured position of at least a portion of the backside surface of the wafer, from the wafer shape measurement system, at least corresponding with at least one of the first inspection sub-system or the at least an additional inspection sub-system; and

adjust at least one of a first focus position of the first inspection sub-system or at least an additional focus position of the at least an additional inspection sub-system based on the acquired wafer shape data and the acquired measured position of at least the portion of the backside surface of the wafer to correct for focus error caused by the distortion of the backside surface of the wafer.

14. The system of claim 13, wherein at least of the first optical assembly or the at least an additional optical assembly comprises:

an illumination source;

a set of illumination optics including at least an objective configured to focus illumination from the illumination source to a focal point;

a detector configured to detect illumination reflected or scattered from the wafer; and

a set of collection optics configured to collect illumination from the surface of the wafer and direct the collected illumination to the detector.

15. The system of claim 13, wherein at least one of the first actuation assembly or the at least an additional actuation assembly comprises:

an actuation stage;

an actuator mechanically coupled to the actuation stage and configured to selectively translate the actuation stage.

16. The system of claim 13, wherein the wafer shape measurement system comprises:

at least one of an optical-based wafer shape measurement system, a proximity-based wafer shape measurement system, an inductance-based wafer shape measurement system or an air-pressure-based wafer shape measurement system.

17. A system for inspecting a backside surface of a wafer with multi-channel focus control comprising:

a plurality of inspection sub-systems including a first inspection sub-system and at least an additional inspection sub-system, wherein the wafer is secured at one or more edge portions of the wafer, wherein the backside surface of the wafer is distorted;

wherein the first inspection sub-system comprises;

a first optical assembly;

a first actuation assembly, wherein the first optical assembly is disposed on the first actuation assembly; and

a first focus measurement device configured to measure the focus of illumination from the first inspection sub-system;

wherein the at least an additional inspection sub-system comprises;

at least an additional optical assembly;

at least an additional actuation assembly, wherein the at least an additional optical assembly is disposed on the at least an additional actuation assembly; and

an additional focus measurement device configured to measure the focus of illumination from the at least an additional inspection sub-system;

a controller, wherein the controller is communicatively coupled to the first actuation assembly, the at least an additional actuation assembly, the first positional sensor and the at least an additional positional sensor, wherein the controller is configured to execute a set of program instructions configured to cause one or more processors to;

receiving a measured first focus of illumination from the first inspection sub-system;

receiving at least an additional focus of illumination from the at least an additional inspection sub-system; and

adjust at least one of a first focus position of the first inspection sub-system or at least an additional focus position of the at least an additional inspection sub-system based on at least one of the measured first focus and the measured at least an additional focus to correct for focus error caused by the distortion of the backside surface of the wafer.

18. The system of claim 17, wherein at least of the first optical assembly or the at least an additional optical assembly comprises:

an illumination source;

a set of illumination optics including at least an objective configured to focus illumination from the illumination source to a focal point;

a detector configured to detect illumination reflected or scattered from the wafer; and

a set of collection optics configured to collect illumination from the surface of the wafer and direct the collected illumination to the detector.

19. The system of claim 17, wherein at least one of the first actuation assembly or the at least an additional actuation assembly comprises:

an actuation stage;

an actuator mechanically coupled to the actuation stage and configured to selectively translate the actuation stage.

20. A method for multi-channel focus control during backside wafer inspection comprising:

acquiring one or more wafer profile maps of the backside surface of the wafer, wherein the wafer is secured at one or more edge portions of the wafer, wherein the backside surface of the wafer is distorted;

measuring a first position characteristic between a portion of a first optical assembly of a first inspection sub-system and the backside surface of the wafer

measuring a second position characteristic between a portion of second optical assembly of a second inspection sub-system and the backside surface of the wafer;

determining a first focus offset between the backside surface of the wafer and the portion of the first optical assembly by comparing the first position characteristic to the received one or more wafer profile maps;

determining a second focus offset between the backside surface of the wafer and the portion of the second optical assembly by comparing the second position characteristic to the received one or more wafer profile maps; and

adjusting a first focus position of the first inspection sub-system sufficient to correct the determined first focus offset caused by the distortion of the backside surface of the wafer; and

adjusting a second focus position of the second inspection sub-system sufficient to correct the determined second focus offset caused by the distortion of the backside surface of the wafer.

21. A method for multi-channel focus control during backside inspection of a wafer comprising:

acquiring wafer shape data at least corresponding with a first wafer position of at least one of the first inspection sub-system or a second wafer position of the at least an additional inspection sub-system, wherein the wafer is secured at one or more edge portions of the wafer, wherein the backside surface of the wafer is distorted;

measuring a first position characteristic between a portion of a first optical assembly of the first inspection sub-system and the backside surface of the wafer;

measuring a second position characteristic between a portion of second optical assembly of the second inspection sub-system and the backside surface of the wafer;

determining a first focus offset between the backside surface of the wafer and the portion of the first optical assembly by comparing the first position characteristic to profile values of the wafer shape data corresponding with the first wafer position;

determining a second focus offset between the backside surface of the wafer and the portion of the second optical assembly by comparing the second position characteristic to profile values of the wafer shape data corresponding with the second wafer position; and

adjust a first focus position of the first inspection sub-system sufficient to correct the determined first focus offset caused by the distortion of the backside surface of the wafer; and

adjust a second focus position of the second inspection sub-system sufficient to correct the determined second focus offset caused by the distortion of the backside surface of the wafer.

22. A method for multi-channel focus control during backside inspection of a wafer comprising:

measuring a first focus of illumination directed to the backside surface of the wafer from a first inspection sub-system located at a first wafer position;

measuring a second focus of illumination directed to the backside surface of the wafer from a second inspection sub-system located at a second wafer position, wherein the wafer is secured at one or more edge portions of the wafer, wherein the backside surface of the wafer is distorted;

adjusting a first focus position of the first inspection sub-system based on the first measured focus at the first wafer position to correct for focus error caused by the distortion of the backside surface of the wafer; and

adjusting a second focus position of the second inspection sub-system based on the second measured focus at the second wafer position to correct for focus error caused by the distortion of the backside surface of the wafer.