Performance enhanced semiconductor socket
First Claim
1. A test socket of IC devices comprising:
- a multi-layered socket housing including a plurality of dielectric layers comprising;
at least one center layer comprising first and second major surfaces, a center layer thickness, a plurality of center layer openings having center layer opening diameters, and a center layer dielectric constant;
a first surface layer located on the first major surface of the center layer, the first surface layer comprising a first surface layer thickness less than the center layer thickness, a plurality of first surface layer openings aligned with the center layer openings, the first surface layer openings having first surface layer opening diameters less than the center layer opening diameters, the first surface layer comprising a first surface layer dielectric constant less than the center layer dielectric constant;
a second surface layer located on the second major surface of the center layer, the second surface layer comprising a second surface layer thickness less than the center layer thickness, a plurality of second surface layer openings aligned with the center layer openings, the second surface layer openings having second surface layer opening diameters less than the center layer opening diameters, the second surface layer comprising a second surface layer dielectric constant less than the center layer dielectric constant;
a metal layer deposited on inside surfaces of one or more of the center layer openings, the first surface layer opening, and the second surface layer openings; and
a plurality of contact members located in the center openings having distal ends extending into the first and second layer openings to permit electrical coupling with the IC devices, the distal ends of the contact members having at least one dimension greater than the first and second surface layer opening diameters to retain the contact members in the socket housing, the contact members comprising center portions with major diameters less than the center opening diameters, the first and second surface layer openings retaining the contact members in the center openings such that an air gap is maintained between the contact members and the center layer.
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Accused Products
Abstract
A test socket for IC devices includes a multi-layered socket housing with at least one center layer and first and second surface layers. The first and second surface layers have a thickness and dielectric constant less than that of the center layers. A plurality of contact members are located in center openings in the center layer with distal ends extending into openings in the first and second layers. The distal ends of the contact members having at least one dimension greater than the openings in the first and second surface layers to retain the contact members in the socket housing. The contact members include center portions with major diameters less than the diameters of the center openings, such that an air gap is maintained between the contact members and the center layer.
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Citations
19 Claims
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1. A test socket of IC devices comprising:
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a multi-layered socket housing including a plurality of dielectric layers comprising; at least one center layer comprising first and second major surfaces, a center layer thickness, a plurality of center layer openings having center layer opening diameters, and a center layer dielectric constant; a first surface layer located on the first major surface of the center layer, the first surface layer comprising a first surface layer thickness less than the center layer thickness, a plurality of first surface layer openings aligned with the center layer openings, the first surface layer openings having first surface layer opening diameters less than the center layer opening diameters, the first surface layer comprising a first surface layer dielectric constant less than the center layer dielectric constant; a second surface layer located on the second major surface of the center layer, the second surface layer comprising a second surface layer thickness less than the center layer thickness, a plurality of second surface layer openings aligned with the center layer openings, the second surface layer openings having second surface layer opening diameters less than the center layer opening diameters, the second surface layer comprising a second surface layer dielectric constant less than the center layer dielectric constant; a metal layer deposited on inside surfaces of one or more of the center layer openings, the first surface layer opening, and the second surface layer openings; and a plurality of contact members located in the center openings having distal ends extending into the first and second layer openings to permit electrical coupling with the IC devices, the distal ends of the contact members having at least one dimension greater than the first and second surface layer opening diameters to retain the contact members in the socket housing, the contact members comprising center portions with major diameters less than the center opening diameters, the first and second surface layer openings retaining the contact members in the center openings such that an air gap is maintained between the contact members and the center layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of making test socket of IC devices comprising the steps of:
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forming a multi-layered socket housing including a plurality of dielectric layers, comprising the steps of; forming at least one center layer with first and second major surfaces, a center layer thickness, a plurality of center layer openings having center layer opening diameters, and, a center layer dielectric constant; forming a first surface layer on the first major surface of the center layer, the first surface layer comprising a first surface layer thickness less than the center layer thickness, a plurality of first surface layer openings aligned with the center layer openings, the first surface layer openings having first surface layer opening diameters less than the center layer opening diameters, the first surface layer comprising a first surface layer dielectric constant less than the center layer dielectric constant; forming a second surface layer on the second major surface of the center layer, the second surface layer comprising a second surface layer thickness less than the center layer thickness, a plurality of second surface layer openings aligned with the center layer openings, the second surface layer openings having second surface layer opening diameters less than the center layer opening diameters, the second surface layer comprising a second surface layer dielectric constant less than the center layer dielectric constant; depositing a metal layer on inside surfaces of one or more of the center layer openings, the first surface layer opening, and the second surface layer openings; and positioning a plurality of contact members in the center openings having distal ends extending into the first and second layer openings to permit electrical coupling with the IC devices, the distal ends of the contact members having at least one dimension greater than the first and second surface layer opening diameters to retain the contact members in the socket housing, the contact members comprising center portions with major diameters less than the center opening diameters, the first and, second surface layer openings retaining the contact members in the center openings such that an air gap is maintained between the contact members and the center layer. - View Dependent Claims (16, 17, 18, 19)
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Specification